AO7408 20V N-Channel MOSFET General Description Product Summary The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) 20V 2A Top View VDS RDS(ON) (at VGS=4.5V) < 62mΩ RDS(ON) (at VGS=2.5V) < 75mΩ RDS(ON) (at VGS=1.8V) < 85mΩ SC-70-6 (SOT-323) Bottom View D Top View D D G 6 D 2 5 D 3 4 S 1 G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: July 2010 Steady-State Steady-State A 16 W 0.22 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 0.35 PD TA=70°C ±8 1.5 IDM TA=25°C Units V 2 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W Page 1 of 5 AO7408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Min Conditions ID=250µA, VGS=0V Typ Max 20 V VDS=20V, VGS=0V 1 TJ=55°C µA 5 VDS=0V, VGS=±8V ±100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 VGS=4.5V, ID=2A Units 0.7 1 nA V A 50 62 70 90 VGS=2.5V, ID=1.8A 56 75 mΩ VGS=1.8V, ID=1A 66 85 mΩ Forward Transconductance VDS=5V, ID=2A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=2A mΩ S 1 V 0.35 A 320 pF 48 pF 27 pF 3 4.5 Ω 2.9 4 nC Qgs Gate Source Charge 0.4 nC Qgd tD(on) Gate Drain Charge 0.6 nC Turn-On DelayTime 2.5 tr Turn-On Rise Time ns 3.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=2A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.8 VGS=10V, VDS=10V, RL=5Ω, RGEN=3Ω 21 ns 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: July 2010 www.aosmd.com Page 2 of 5 AO7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=5V 4.5V 20 16 2.5V 15 ID(A) ID (A) 12 2V 8 10 125°C 5 4 VGS=1.5V 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 120 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ Ω) 25°C VGS=1.8V 80 VGS=2.5V 60 VGS=4.5V 40 0 2 VGS=2.5V ID=1.8A 1.4 VGS=1.8V 17 ID=1A 5 1.2 2 10 VGS=4.5V ID=2A 1 0.8 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+01 ID=2A 1.0E+00 40 100 80 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125° 125° 1.0E-02 25° 1.0E-03 60 1.0E-04 25° 1.0E-05 40 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: July 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 400 VDS=10V ID=2A 350 4 Ciss Capacitance (pF) VGS (Volts) 300 3 2 250 200 150 Coss 100 1 50 0 Crss 0 0 1 1 2 2 3 3 Qg (nC) Figure 7: Gate-Charge Characteristics 4 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TA=25°C ID (Amps) 10µs 100µs RDS(ON) limited 1.0 1ms Power (W) 100 10.0 10 10ms 0.1 TJ(Max)=150°C TA=25°C 1 10s DC 0.1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=425°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: July 2010 www.aosmd.com Page 4 of 5 AO7408 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 3: July 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5