FGB7N60UNDF tm 600V, 7A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description • High input impedance Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential. • Fast switching • RoHS compliant C COLLECTOR (FLANGE) G C E TO-263AB/D2-PAK G E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC Collector Current @ TC = 25oC Collector Current @ TC = 100oC ICM (1) Pulsed Collector Current IF Diode Forward Current PD Ratings Units 600 V ± 20 V 14 A 7 A @ TC = 25 C 21 A @ TC = 25oC 7 A 83 W o o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o 33 W TJ Operating Junction Temperature @ TC = 100 C -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. A 1 www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated December 2011 Symbol RθJC(IGBT) Parameter Typ. Max. Thermal Resistance, Junction to Case Units 1.5 o C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case 3.5 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 40 oC/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) Package Marking and Ordering Information Device Marking Device Package FGB7N60UNDF FGB7N60UNDF TO-263AB/D2-PAK Electrical Characteristics of the IGBT Symbol Parameter Rel Size Tape Width Quantity - 50 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 uA 5.5 6.8 8.5 V IC = 7A, VGE = 15V - 1.9 2.3 V IC = 7A, VGE = 15V, TC = 125oC - 2.1 - V - 275 pF - 41 pF - 10 pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 5.9 ns tr Rise Time - 4.2 ns - 32.3 - 68 td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 99 uJ Eoff Turn-Off Switching Loss - 104 uJ Ets Total Switching Loss - 203 uJ td(on) Turn-On Delay Time - 6 ns VCC = 400V, IC = 7A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC ns 89 ns tr Rise Time - 4.3 ns td(off) Turn-Off Delay Time - 33.8 ns tf Fall Time - 113 ns Eon Turn-On Switching Loss - 181 uJ Eoff Turn-Off Switching Loss - 144 uJ Ets Total Switching Loss - 325 uJ Tsc Short Circuit Withstand Time FGB7N60UNDF Rev. A VCC = 400V, IC = 7A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 10 us www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 7A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 7A Diode Reverse Recovery Charge FGB7N60UNDF Rev. A 18 - nC 3 - nC - 13 - nC TC = 25°C unless otherwise noted IF =7A, dIF/dt = 200A/µs Qrr - Min. Typ. Max TC = 25oC - 1.7 2.2 TC = 125oC - 1.6 TC = 25oC - 32.3 o TC = 125 C - 70 TC = 25oC - 59 - 172 TC = 3 125oC Units V ns nC - www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 30 o TC = 25 C 20V 15V VGE = 12V 10 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] VGE = 12V 20 10 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 4. Transfer Characteristics 30 30 Common Emitter VCE = 20V Common Emitter VGE = 15V 25 o TC = 25 C o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 17V 20V 15V 20 0 0.0 o TC = 125 C 17V Collector Current, IC [A] 30 Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = 125 C 20 15 10 o TC = 125 C 20 10 5 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 14A 2.5 7A 2.0 1.5 1.0 25 IC = 3.5A 4 Common Emitter o TC = 25 C 16 12 8 7A 4 14A IC = 3.5A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGB7N60UNDF Rev. A 15 Figure 6. Saturation Voltage vs. VGE 3.5 3.0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 1000 20 Common Emitter o TC = 25 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics 12 8 Coes 100 7A Common Emitter VGE = 0V, f = 1MHz 14A 4 IC = 3.5A 0 4 o TC = 25 C 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 30 30 200V 10 Collector Current, Ic [A] 400V 12 VCC = 100V 9 6 3 10µs 100µs 1 1ms 10 ms DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 Common Emitter o TC = 25 C 0.01 0 0 5 10 15 Gate Charge, Qg [nC] 1 20 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 300 10 Switching Time [ns] 200 100 Switching Time [ns] 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Cres td(on) tr Common Emitter VCC = 400V, VGE = 15V IC = 7A 1 tf 100 td(off) Common Emitter VCC = 400V, VGE = 15V IC = 7A o TC = 25 C o TC = 25 C o 0.1 TC = 125 C o TC = 125 C 10 0 10 FGB7N60UNDF Rev. A 20 30 40 Gate Resistance, RG [Ω ] 50 0 60 10 20 30 40 50 60 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 500 30 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 10 o tr 1 TC = 125 C Switching Time [ns] Switching Time [ns] td(on) Common Emitter VGE = 15V, RG = 10Ω 100 tf td(off) o TC = 25 C o TC = 125 C 10 0.1 0 5 10 0 15 5 10 15 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 1000 Common Emitter VCC = 400V, VGE = 15V IC = 7A Eon Switching Loss [uJ] Switching Loss [µJ] o TC = 25 C o TC = 125 C Eon Eoff 100 20 Collector Current, IC [A] Eoff 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 125 C 50 0 10 20 30 40 Gate Resistance, RG [Ω] 50 0.02 60 0 5 10 15 20 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 30 Forward Current, IF [A] Collector Current, IC [A] 30 10 10 o o TJ = 75 C TJ = 125 C o TJ = 25 C 1 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 0.2 1000 0 Collector-Emitter Voltage, VCE [V] FGB7N60UNDF Rev. A 6 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 100 0.20 o Reverse Current , IR [µA] 10 Stored Recovery charge, Qrr [ns] TC = 25 C o TJ = 125 C 1 o TJ = 75 C 0.1 0.01 o TJ = 25 C 1E-3 1E-4 50 200 400 Reverse Voltage, VR [V] 200A/µs o TC = 125 C 0.15 di/dt = 100A/µs 0.10 200A/µs 0.05 di/dt = 100A/µs 0.00 600 0 2 4 6 8 Forward Current, IF [A] Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [nC] 100 di/dt = 100A/µs 200A/µs 50 di/dt = 100A/µs 200A/µs o TC = 25 C o TC = 125 C 0 0 2 4 6 8 10 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGB7N60UNDF Rev. A 7 www.fairchildsemi.com FGB7N60UNDF 600V, 7A Short Circuit Rated Typical Performance Characteristics FGB7N60UNDF 600V, 7A Short Circuit Rated Mechanical Dimensions TO-263AB/D2_PAK FGB7N60UNDF Rev. A 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I58 FGB7N60UNDF Rev. 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