DMC1229UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features V(BR)DSS Q1 N-Channel RDS(ON) max Low On-Resistance Low Input Capacitance 5.6A 5.1A 4.5A 3.7A -3.8A -3.3A -2.8A -2.3A Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 170mΩ @ VGS = -1.5V 12V Q2 P-Channel ID MAX TA = +25°C -12V Mechanical Data Description Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch Power Management Functions Portable Power Adaptors Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (approximate) D2 D1 U-DFN2020-6 Type B S2 G2 D2 D1 D2 G2 G1 D1 G1 S2 S1 S1 Pin1 N-CHANNEL MOSFET P-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMC1229UFDB -7 DMC1229UFDB -13 Notes: Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMC1229UFDB Document number: DS36128 Rev. 4 - 2 Mar 3 YM D2 D2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2014 B Apr 4 May 5 2015 C Jun 6 1 of 9 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D September 2013 © Diodes Incorporated DMC1229UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Q1 N-CHANNEL Q2 P-CHANNEL Units Drain-Source Voltage VDSS 12 -12 V Gate-Source Voltage VGSS ±8 ±8 V -3.8 -3.0 A -5.0 -4.0 A Characteristic Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25C TA = +70C ID 5.6 4.4 t < 5s TA = +25C TA = +70C ID 7.2 5.8 Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) IS 1 -1 A IDM 20 -15 A Thermal Characteristics Characteristic Symbol Value 1.4 2.2 Total Power Dissipation (Note 5) Steady State t < 5s PD Thermal Resistance, Junction to Ambient (Note 5) Steady State t < 5s RJA 92 55 RJC 30 TJ, TSTG -55 to 150 Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Note: Units W °C/W °C 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. DMC1229UFDB Document number: DS36128 Rev. 4 - 2 2 of 9 www.diodes.com September 2013 © Diodes Incorporated DMC1229UFDB Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) — 17 20 24 30 6.5 0.6 1 29 34 44 65 — 1.2 V Static Drain-Source On-Resistance 0.4 — — — — — — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4.6A VGS = 1.8V, ID = 4.1A VGS = 1.5V, ID = 2A VDS = 10V, ID = 5A VGS = 0V, IS = 1A — — — — — — — — — — — — 914 132 119 1.26 10.5 19.6 1.2 1.6 5.0 10.5 16.6 4.1 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 6V, ID = 6.5A VDD = 6V, VGS = 4.5V, RL = 1.2Ω, RG = 1Ω Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) — 37 47 63 90 5.5 -0.65 -1 61 81 115 170 — -1.2 V Static Drain-Source On-Resistance -0.4 — — — — — — VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VDS = -10V, ID = -3.6A VGS = 0V, IS = -1A — — — — — — — — — — — — 915 225 183 56.9 10.7 17.9 1.7 3.0 5.7 11.5 27.8 26.4 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -6V, ID = -4.3A VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMC1229UFDB Document number: DS36128 Rev. 4 - 2 3 of 9 www.diodes.com September 2013 © Diodes Incorporated DMC1229UFDB Q1 N-CHANNEL 20.0 18.0 16 ID, DRAIN CURRENT (A) VGS = 1.5V VGS = 2.5V 12.0 VGS = 2V 10.0 VGS = 1.8V 8.0 6.0 VGS = 1.2V 12 10 8 2.0 2 VGS = 1V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.05 VGS = 1.5V 0.04 0.03 VGS = 1.8V VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 1 3 5 7 9 11 13 15 17 19 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 21 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 VGS = 2.5V ID = 3A 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 Document number: DS36128 Rev. 4 - 2 TA = 25°C TA = 125°C TA = -55°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.03 VGS = 4.5V TA = 150°C 0.025 TA = 125°C TA = 85°C 0.02 T A = 25°C 0.015 TA = -55°C 0.01 0.005 0 2 4 6 8 10 12 14 16 18 20 0.04 0.035 0.03 VGS = 4.5V ID = 3A 0.025 0.02 VGS = 4.5V ID = 5A 0.015 0.01 0.005 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMC1229UFDB TA = 85°C ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1.8 1.4 0 5 TA = 150°C 6 4.0 0.0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 14 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) VGS = 3V 14.0 VDS = 5.0V 18 VGS = 4.5V 16.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20 VGS = 8V 4 of 9 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated 1 20 0.9 18 0.8 16 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) DMC1229UFDB 0.7 ID = 1mA 0.6 ID = 250µA 0.5 0.4 0.3 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS36128 Rev. 4 - 2 12 TA = 25°C 10 8 6 4 2 0.1 DMC1229UFDB 14 5 of 9 www.diodes.com 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current September 2013 © Diodes Incorporated DMC1229UFDB Q2 P-CHANNEL 10.0 9.0 16 -ID, DRAIN CURRENT (A) VGS = -3V 7.0 VGS = -2.5V 6.0 VGS = -2V VGS = -1.5V 5.0 VGS = -1.8V 4.0 3.0 2.0 10 8 6 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 VGS = -1.8V 0.09 0.08 0.07 0.06 VGS = -2.5V 0.05 0.04 VGS = -4.5V 0.03 0.02 1 3 5 7 9 11 13 15 17 19 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 21 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.4 VGS = -2.5V ID = -3A 1.3 1.2 1.1 VGS = -4.5V ID = -5A 1.0 0.9 0.8 0.7 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 12 TA = 150°C -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMC1229UFDB Document number: DS36128 Rev. 4 - 2 6 of 9 www.diodes.com TA = 85°C TA = 25°C TA = 125°C 2 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 14 4 VGS = -1.2V 1.0 0.0 VDS = -5.0V 18 VGS = -4.5V 8.0 -ID, DRAIN CURRENT (A) 20 VGS = -8V 0 TA = -55°C 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3.0 0.05 VGS = -4.5V T A = 150C 0.045 T A = 125C T A = 85C 0.04 T A = 25C 0.035 0.03 T A = -55C 0.025 0.02 1 3 5 7 9 11 13 15 17 19 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 21 0.07 0.06 VGS = -2.5V ID = -3A 0.05 0.04 VGS = -4.5V ID = -5A 0.03 0.02 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated DMC1229UFDB 20 18 0.9 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 0.8 0.7 -ID = 1mA 0.6 -ID = 250µA 0.5 0.4 16 14 12 10 0.3 TA= 25°C 6 4 2 0.2 -50 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 1000 T = 150°C 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current J(max) RDS(on) Limited TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 100 -ID, DRAIN CURRENT (A) 8 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms PW = 100µs 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 156°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMC1229UFDB Document number: DS36128 Rev. 4 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 10 Transient Thermal Resistance 7 of 9 www.diodes.com 10 100 1,000 September 2013 © Diodes Incorporated DMC1229UFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y G X2 G1 X1 G Z DMC1229UFDB Document number: DS36128 Rev. 4 - 2 Y1 Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 8 of 9 www.diodes.com September 2013 © Diodes Incorporated DMC1229UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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