PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 26 60 A A IA EAS TC = 25°C TC = 25°C 13 1.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 960 W G = Gate S = Source -55 ... +150 150 -55 ... +150 °C °C °C Features: 300 260 °C °C TJ TJM Tstg G 1.6 mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb Weight TO-264 PLUS247 10 6 g g (TAB) z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density Applications: V z 6.5 V ± 200 nA z 50 5 μA mA z 460 mΩ z TJ = 125°C D = Drain TAB = Drain Advantages: z Symbol Test Conditions (TJ = 25°C unless otherwise specified) (TAB) S PLUS247 (IXFX) z TL TSOLD D z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99740G (04/08) IXFK26N120P IXFX26N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1 MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 21 S 14 nF 725 pF 50 pF 1.5 Ω 56 ns 55 ns 76 ns 58 ns 225 nC 87 nC 98 nC 0.13 °C/W RthJC RthCS Symbol Test Conditions IS VGS = 0V ISM VSD QRM °C/W 0.15 Source-Drain Diode trr TO-264 (IXFK) Outline Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 13A, -di/dt = 100A/μs VR = 100V, VGS = 0V IRM 1.3 μC 12 A Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK26N120P IXFX26N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 26 50 VGS = 10V 9V 24 22 40 20 9V 35 ID - Amperes 18 ID - Amperes VGS = 10V 45 16 14 8V 12 10 8 30 25 20 8V 15 6 10 4 7V 2 5 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 7V 0 3 6 9 26 18 21 24 27 30 2.8 VGS = 10V 9V 24 2.6 22 VGS = 10V 2.4 18 RDS(on) - Normalized 20 ID - Amperes 15 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 8V 16 14 12 10 7V 8 2.2 2.0 I D = 26A 1.8 I D = 13A 1.6 1.4 1.2 1.0 6 0.8 4 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 28 2.4 VGS = 10V 2.2 24 TJ = 125ºC 2 20 ID - Amperes RDS(on) - Normalized 12 VDS - Volts VDS - Volts 1.8 1.6 1.4 16 12 8 1.2 TJ = 25ºC 4 1 0 0.8 0 5 10 15 20 25 30 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK26N120P IXFX26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 40 30 TJ = - 40ºC 35 TJ = 125ºC 25ºC - 40ºC 20 30 g f s - Siemens ID - Amperes 25 15 10 25ºC 25 20 125ºC 15 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 VGS - Volts 20 25 30 35 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 TJ = 125ºC 30 15 ID - Amperes TJ = 25ºC 20 VDS = 600V I D = 13A I G = 10mA 8 6 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 200 240 280 320 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N120P(96) 3-28-08-B