AOSMD AOF800L Asymmetric dual n-channel enhancement mode field effect transistor Datasheet

AO4F800
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
The AO4F800 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. Standard Product AOF800 is Pb-free
(meets ROHS & Sony 259 specifications). AOF800L
is a Green Product ordering option. AOF800 and
AOF800L are electrically identical.
D1
D1
G1
G2
S2
S2
S2
14
13
12
11
10
9
8
1
2
3
4
5
6
7
S1
S1
D2/S1
D2/S1
D2/S1
D2/S1
D2/S1
D1
SOIC-14
Q2
G1
G2
S1
B
IDM
TA=25°C
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
PD
TJ, TSTG
Parameter: Thermal Characteristics MOSFET Q1
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-AmbientA
C
Steady-State
Maximum Junction-to-Lead
Symbol
Parameter: Thermal Characteristics MOSFET Q2
t ≤ 10s
Maximum Junction-to-AmbientA
Symbol
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
D2
Q1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
TA=25°C
A
Current
ID
TA=70°C
Pulsed Drain Current
Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 8.3A (VGS = 10V) ID=17.7A
RDS(ON) < 18mΩ
< 6.5mΩ
(VGS = 10V)
< 8.5mΩ
(VGS = 4.5V)
RDS(ON) < 27mΩ
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJL
RθJA
RθJL
S2
Max Q1
30
Max Q2
30
Units
V
±20
±20
V
8.3
6.7
17.7
13
A
30
80
2
3
1.28
-55 to 150
2.1
-55 to 150
Typ
47
83
23
Max
62.5
110
40
Units
Typ
Max
Units
31
40
59
16
75
24
W
°C
°C/W
°C/W
AO4F800
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8.3A
TJ=125°C
VGS=4.5V, ID=6.7A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=8.3A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
Max Units
V
VDS=24V, VGS=0V
IGSS
IS
Typ
VGS=0V, VDS=15V, f=1MHz
18
1.8
100
nA
3
V
A
15
18
21
25
22
27
mΩ
1
V
3
A
23
0.76
VGS=10V, VDS=15V, ID=8.3A
mΩ
S
1040 1250
pF
190
pF
120
VGS=0V, VDS=0V, f=1MHz
µA
0.7
pF
0.85
Ω
19.8
24
nC
9.8
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.5
tD(on)
Turn-On DelayTime
5.2
6.25
ns
tr
Turn-On Rise Time
5
6
ns
tD(off)
Turn-Off DelayTime
20.5
25
ns
tf
Turn-Off Fall Time
3.6
4.3
ns
trr
Body Diode Reverse Recovery time
IF=8.3A, dI/dt=100A/µs
15
18
ns
Qrr
Body Diode Reverse Recovery charge IF=8.3A, dI/dt=100A/µs
8
10
nC
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
2.5
nC
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
30
10V
25
25
3.5V
4.5V
15
10
125°C
15
19
10
VGS=3V
5
VDS=5V
20
ID(A)
20
ID (A)
30
4V
5
VDS=5V, ID=8.8A
0
0
0
1
2
3
4
1
5
1.5
2.5
VGS=4.5V
Normalized On-Resistance
VGS=10V, VDS=15V, ID=8.8A
22
18
3
3.5
ID=8.3A
1.6
VGS=10V
1.5
1.4
VGS=10V, VDS=15V, RL=1.7Ω,1.3
RGEN=3Ω
VGS=10V
14
IF=8.8A, dI/dt=100A/µs
0
5
10
15
20
25
VGS=4.5V
1.2
1.1
1
IF=8.8A, dI/dt=100A/µs
10
4
180
110
0.7
1.7
26
RDS(ON) (mΩ)
2
VGS (Volts)
1040
Figure 2: Transfer
Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
0.9
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
1.0E+01
60
1.0E+00
ID=8.3A
50
125°C
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
24
25°C
30
1.0E-02
25°C
1.0E-03
125°C
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4F800
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
1500
10
VDS=15V
ID=8.3A
Capacitance (pF)
VGS (Volts)
8
1250
6
4
Ciss
1000
2
750
500
Coss
19
Crss
24
250
VDS=5V, ID=8.8A
0
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
ID (A)
1.0
RDS(ON)
limited
VDS (Volts)
30
TJ(Max)=150°C
TA=25°C
20
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
180
110
0.7
0
0.001
IF=8.8A,
dI/dt=100A/µs
10
100
1
25
10
10s
DC
IF=8.8A,
dI/dt=100A/µs
0.1
20
VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω
1s
0.1
15
VGS=10V, V10µs
DS=15V, ID=8.8A
30
100µs
10ms
0.1s
10
40
Power (W)
1ms
5
VDS (Volts)
Figure 8: Capacitance
1040 Characteristics
TJ(Max)=150°C, TA=25°C
10.0
ZθJA Normalized Transient
Thermal Resistance
f=1MHz
VGS=0V
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
80
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=17.7A
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=4.5V, ID=13A
6.8
8.5
VDS=5V, ID=17.7A
82
0.7
6060
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=17.7A
V
A
7270
pF
0.45
0.54
Ω
103
124
nC
48
57
nC
15
Turn-On DelayTime
12
Turn-Off Fall Time
1
4.5
pF
Gate Drain Charge
tf
S
pF
tD(on)
Turn-Off DelayTime
mΩ
355
Qgd
Turn-On Rise Time
mΩ
638
Gate Source Charge
tr
V
A
Qgs
tD(off)
2.5
9.1
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
nA
6.5
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
1.8
µA
100
5.4
Forward Transconductance
Output Capacitance
5
7.56
TJ=125°C
VSD
Crss
V
TJ=55°C
gFS
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=24V, VGS=0V
IDSS
IS
Typ
18
nC
nC
14
ns
VGS=10V, VDS=15V, RL=0.85Ω,
RGEN=3Ω
8
10
ns
51.5
62
ns
8.8
11
ns
IF=17.7A, dI/dt=100A/µs
33.5
40
22
26
ns
nC
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=17.7A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
60
60
10V
50
40
VDS=5V
40
30
ID(A)
ID (A)
50
4.5V
3.5V
3.0V
20
125°C
30
20
10
25°C
10
VGS=2.5V
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
7.5
Normalized On-Resistance
1.6
7.0
RDS(ON) (mΩ)
2
VGS=4.5V
6.5
6.0
5.5
VGS=10V
5.0
4.5
ID=17.7A
1.4
VGS=4.5V
VGS=10V
1.2
1
0.8
0
10
20
30
40
50
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
1.0E+02
1.0E+01
1.0E+00
ID=17.7A
IS (A)
RDS(ON) (mΩ)
12
125°C
8
125°C
25°C
1.0E-02
1.0E-03
25°C
4
1.0E-01
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
8000
10
VDS=15V
ID=17.7A
6
4
4000
2000
2
0
0
20
40
60
80
100
Ciss
6000
Capacitance (pF)
VGS (Volts)
8
Crss
0
120
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
80
1ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
25
30
60
40
20
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
20
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
10ms
10.0
10
15
100
RDS(ON)
limited
0.1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
1.0
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
Similar pages