ABU1519 ABU1519 Data Sheet 5 ~ 1400 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description ABU1519, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of 5 ~ 1400 MHz, being suitable to low return loss in the reverse (5 ~ 300 MHz) and flat gain in the forward path (50 ~ 1400 MHz) in the fiber receiver, distribution amplifiers and drop amplifiers of CATV. The gain slope is adjustable with the off-chip feedback circuit components. The amplifier is available in an SOT89 package and passes through the stringent 100% DC & RF test in an automated test handler. 1.2 Features Low-noise and high linearity Wide-band CATV application at 5 ~ 1400 MHz 75 input & output matching Robust under hard operating conditions 19.4 dB gain at 50 MHz CSO of 68 dBc, CTB of 61 dBc @ Pout = 100 dBV flat for NTSC 77 channels, device voltage = +5 V Single supply: +5 V 1.3 Applications CATV Reverse at 5 ~ 300 MHz CATV Forward at 50 ~ 1400 MHz Optical Node, FTTH, RFoG 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4.0 mm2, surface mount 1/12 ASB Inc. [email protected] RoHS-compliant August 2017 ABU1519 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 5 50 300 MHz Noise Figure 2.9 2.0 2.1 dB Gain 19.1 19.4 19.3 dB S11 -19 -18 -17 dB S22 -16 -18 -20 dB Output IP3 281) 402) 402) dBm IP23) 44 63 60 dBm Output P1dB 14 20 21 dBm CSO 684) dBc CTB 614) dBc Current 123 mA Device Voltage +5 V Output 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. 2) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 3) OIP2 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 4) CSO & CTB measured at Pout = 100 dBV flat for NTSC 77 channels. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min Typ Max Unit Frequency 50 MHz Noise Figure 2.0 dB Gain 18.4 19.4 20.4 dB S11 -18 dB S22 -18 dB Output IP31) 40 dBm Output IP22) 63 dBm Output P1dB 20 dBm Current 103 Device Voltage 123 143 +5 mA V 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 2/12 ASB Inc. [email protected] August 2017 ABU1519 2.3 Pin Configuration Pin Description 1 RF_IN 2 Ground 3 RF_OUT & Bias 2.4 Simplified Outline Absolute Maximum Ratings, TA = +25 C Parameters Max. Ratings Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Device Current 160 mA Power Dissipation +0.8 W Junction Temperature +150 C Input RF Power (CW, 75 matched) +25 dBm Note: operation of this device in excess of any of these limits may cause permanent damage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 67 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/12 ASB Inc. [email protected] August 2017 ABU1519 3. Application: 5 ~ 300 MHz (Vdevice = +5 V) 3.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 L1 RF IN C2 C1 RF OUT ABU1519 C4 R1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2 Bill of Material 4/12 Symbol Value Size Description Manufacturer ABU1519 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata C4 1 F 0603 Matching capacitor Murata L1 22 H 1206 RF choke inductor Murata R1 910 0603 Feedback resistor Samsung ASB Inc. [email protected] August 2017 ABU1519 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 5 50 300 MHz Noise Figure 2.9 2.0 2.1 dB Gain 19.1 19.4 19.3 dB S11 -19 -18 -17 dB S22 -16 -18 -20 dB Output IP3 281) 402) 402) dBm Output IP23) 44 63 60 dBm Output P1dB 14 20 21 dBm CSO 684) dBc CTB 614) dBc Current 123 mA Device Voltage +5 V 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. 2) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 3) OIP2 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 4) CSO & CTB measured at Pout = 100 dBV flat for NTSC 77 channels. Note : Pout is 102 dBV @ flat ch. and 102 dBV @ 9 dB tilt for CENELEC 42 ch. at CSO, CTB > 60 dBc. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 S12 S22 K 0 5/12 10 9 8 7 6 5 4 3 2 1 0 50 ASB Inc. 100 150 200 Frequency (MHz) [email protected] 250 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 3.3 300 August 2017 ABU1519 3.4 Plots of Noise Figure and Performances with Temperature 6 25 -40 °C 5 +25 °C 20 +85 °C Gain (dB) NF (dB) 4 3 15 10 -40 °C 2 +25 °C 5 1 +85 °C 0 0 0 50 100 150 200 Frequency (MHz) 250 0 300 0 50 100 150 200 Frequency (MHz) 250 0 -40 °C -40 °C +25 °C +25 °C -10 +85 °C -10 S22 (dB) S11 (dB) 300 +85 °C -20 -20 -30 -40 -30 0 50 100 150 200 Frequency (MHz) 250 0 300 125 50 100 150 200 Frequency (MHz) 250 300 22 Frequency = 50 MHz 21 Gain (dB) Current (mA) 120 115 110 105 19 18 100 17 -60 6/12 20 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 August 2017 ABU1519 4. Application: 50 ~ 1200 MHz (Vdevice = +5 V) 4.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 L1 RF IN C1 L2 L3 C2 RF OUT ABU1519 C5 R1 R2 C4 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2 Bill of Material 7/12 Symbol Value Size Description Manufacturer ABU1519 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata C4 10 nF 0402 Feedback capacitor Murata C5 0.75 pF 0603 Matching capacitor Murata L1 1 H 1206 RF choke inductor Murata L2 8.2 nH 0603 Matching inductor Murata L3 6.8 nH 0603 Matching inductor Murata R1 160 0402 Feedback resistor Samsung R2 750 0402 Feedback resistor Samsung ASB Inc. [email protected] August 2017 ABU1519 4.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1200 MHz Noise Figure 2.0 2.2 2.6 dB Gain 19.2 19.4 19.9 dB S11 -16 -20 -20 dB S22 -15 -18 -20 dB IP31) 40 40 36 dBm Output IP22) 58 Output P1dB 20 CSO 683) dBc CTB 613) dBc Current 123 mA Device Voltage +5 V Output dBm 21 19 dBm 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +6 dBm/tone. 3) CSO & CTB measured at Pout = 100 dBV flat for NTSC 77 channels. Note: Pout is 102 dBV @ flat ch. and 102 dBV @ 9 dB tilt for CENELEC 42 ch. at CSO, CTB > 60 dBc. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 S12 K 0 8/12 S11 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 4.3 August 2017 ABU1519 5. Application: 50 ~ 1400 MHz (Vdevice = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 L1 RF IN C1 L2 L3 ABU1519 C5 R1 C2 RF OUT C6 R2 C4 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2 Bill of Material 9/12 Symbol Value Size Description Manufacturer ABU1519 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata C4 10 nF 0402 Feedback capacitor Murata C5 1 pF 0603 Matching capacitor Murata C6 0.3 pF 0402 Matching capacitor Murata L1 1 H 1206 RF choke inductor Murata L2, L3 6.8 nH 0603 Matching inductor Murata R1 100 0402 Feedback resistor Samsung R2 820 0402 Feedback resistor Samsung ASB Inc. [email protected] August 2017 ABU1519 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1000 1400 MHz Noise Figure 2.0 2.2 2.4 2.8 dB Gain 19.2 19.1 19.0 18.9 dB S11 -14 -18 -18 -17 dB S22 -14 -18 -18 -15 dB IP31) 39 39 38 35 dBm Output IP22) 61 Output P1dB 20 Current 123 mA Device Voltage +5 V Output dBm 21 21 18 dBm 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +6 dBm/tone. Plot of S-parameter & Stability Factor 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S12 0 10/12 200 10 9 S21 8 7 6 5 S11 4 S22 3 2 K 1 0 400 600 800 1000 1200 1400 Frequency (MHz) ASB Inc. [email protected] Stability Factor, K S-parameter (dB) 5.3 August 2017 ABU1519 6. Package Outline (SOT89, 4.5x4.0x1.5 mm) Part No. Lot No. Symbols ABU1519 Pxxxx A L b b1 C D D1 E E1 e1 H S e Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 7. Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. Recommended is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 11/12 ASB Inc. [email protected] August 2017 ABU1519 8. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2017 ASB Inc. All rights reserved. Specifications subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 12/12 ASB Inc. [email protected] August 2017