Foshan MPSA42D Silicon npn transistor in a to-252 plastic package. Datasheet

MPSA42D
Rev.E May.-2016
描述
/
DATA SHEET
Descriptions
TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.

特征
/ Features
耐压高,饱和压降低,集电极输出电容低,与 MPSA92D 互补。
High voltage, low saturation voltage, low collector output capacitance, complementary pair with
MPSA92D.
用途
/
Applications
高电压控制电路。
High voltage control circuit.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
4
1
2
3
PIN1:Base
放大及印章代码
PIN 2,4:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MPSA42D
Rev.E May.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=100μA
IE=0
300
V
VCEO
IC=1.0mA
IB=0
300
V
Emitter to Base Breakdown Voltage
VEBO
IE=100μA
IC=0
6.0
V
Collector Cut-Off Current
ICBO
VCB=200V
IE=0
0.1
μA
Emitter Cut-Off Current
IEBO
VBE=6.0V
IC=0
0.1
μA
hFE(1)
VCE=10V
IC=10mA
40
hFE(2)
VCE=10V
IC=30mA
40
hFE(3)
VCE=10V
IC=1.0mA
25
Collector-Emitter Saturation Voltage VCE(sat)
IC=20mA
IB=2.0mA
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=20mA
IB=2.0mA
0.9
V
Current Gain Bandwidth Product
fT
VCE=20V
f=100MHz
VCB=20V
f=1.0MHz
IC=10mA
DC Current Gain
Output Capacitance
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Cob
IE=0
50
MHz
3.0
pF
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MPSA42D
Rev.E May.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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MPSA42D
Rev.E May.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MPSA42D
Rev.E May.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
A42D
****
说明:
BR:
为公司代码
A42D: 
为型号代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
A42D:
****:
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Product Type.

Lot No. Code, code change with Lot No.
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MPSA42D
Rev.E May.-2016
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Units 包装数量
TO-252
Dimension
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
2,500
2
5,000
5
25,000
包装尺寸
3
(unit:mm )
Reel
Inner Box 盒
Outer Box 箱
13〞×16
360×360×50
385×257×392
/ TUBE
Package Type
封装形式
使用说明
Time:10±1 sec
/ REEL
Package Type
封装形式
TO-251/252
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
套管包装
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
(unit:mm3)
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
75
48
3,600
5
18,000
526×20.5×5.25
555×164×50
575×290×180
/ Notices
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