ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B G M B TA 4 2 NP N EP ITAXIAL PL ANAR T RANS ISTO R Description The GMBTA42 is designed for high voltage transistor. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Characteristics Symbol Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 300 300 6 500 350 V V V mA mW at Ta = 25 Min. Typ. Max. Unit BVCBO 300 - - V IC=100uA , IE=0 BVCEO 300 - - V IC=1mA ,IB=0 BVEBO 6 - - V IE=100uA ,IC=0 ICBO - - 100 nA VCB=200V, IE=0 IEBO - - 100 nA VEB=6V ,IC=0 Test Conditions VCE(sat) - - 500 mV IC=20mA, IB=2mA VBE(sat) - - 900 mV IC=20mA, IB=2mA hFE1 25 - - VCE=10V, IC=1mA hFE2 40 - hFE3 40 - - VCE=10V, IC=30mA fT 50 - - MHz - - 3 pF Cob Unit VCE=10V, IC=10mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz 1/2 ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2