Infineon BAR50-02V Silicon pin diode Datasheet

BAR50...
Silicon PIN Diodes
• Current-controlled RF resistor
for switching and attenuating applications
• Frequency range above 10 MHz up to 6 GHz
• Especially useful as antenna switch
in mobile communication
• Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
• Low forward resistance
• Very low harmonics distortion
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
BAR50-02L
BAR50-02V
BAR50-03W
Type
BAR50-02L
BAR50-02V
BAR50-03W
Package
TSLP-2-1
SC79
SOD323
Configuration
single,leadless
single
single
1
LS(nH)
0.4
0.6
1.8
Marking
AB
a
A
2009-05-13
BAR50...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Diode reverse voltage
VR
50
V
Forward current
IF
100
mA
Total power dissipation
Ptot
mW
BAR50-02L, TS ≤ 130°C
250
BAR50-02V, TS ≤ 120°C
250
BAR50-03W, TS ≤ 115°C
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
1Pb-containing
Unit
°C
package may be available upon special request
Thermal Resistance
Parameter
Symbol
Junction - soldering point 1)
RthJS
Value
Unit
K/W
BAR50-02L
≤ 80
BAR50-02V
≤ 120
BAR50-03W
≤ 140
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
IR
-
-
50
nA
VF
-
0.95
1.1
V
DC Characteristics
Reverse current
VR = 50 V
Forward voltage
IF = 50 mA
1For
calculation of RthJA please refer to Application Note Thermal Resistance
2
2009-05-13
BAR50...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
-
0.24
0.5
VR = 5 V, f = 1 MHz
-
0.2
0.4
VR = 0 V, f = 100 MHz
-
0.2
-
VR = 0 V, f = 1...1.8 GHz, BAR50-02L
-
0.1
-
VR = 0 V, f = 1...1.8 GHz, all other
-
0.15
-
Reverse parallel resistance
kΩ
RP
VR = 0 V, f = 100 MHz
-
25
-
VR = 0 V, f = 1 GHz
-
6
-
VR = 0 V, f = 1.8 GHz
-
5
-
Forward resistance
Ω
rf
I F = 0.5 mA, f = 100 MHz
-
25
40
I F = 1 mA, f = 100 MHz
-
16.5
25
I F = 10 mA, f = 100 MHz
-
3
4.5
τ rr
-
1100
-
ns
I-region width
WI
-
56
-
µm
Insertion loss1)
IL
Charge carrier life time
I F = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
dB
I F = 3 mA, f = 1.8 GHz
-
0.56
-
I F = 5 mA, f = 1.8 GHz
-
0.4
-
I F = 10 mA, f = 1.8 GHz
-
0.27
-
VR = 0 V, f = 0.9 GHz
-
24.5
-
VR = 0 V, f = 1.8 GHz
-
20
-
VR = 0 V, f = 2.45 GHz
-
18
-
VR = 0 V, f = 5.6 GHz
-
12
-
Isolation1)
1BAR50-02L
ISO
in series configuration, Z = 50 Ω
3
2009-05-13
BAR50...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(V R)
f = Parameter
f = Parameter
10 3
0.5
KOhm
pF
10 2
0.4
0.35
Rp
CT
100 MHz
1 GHz
10 1
0.3
1 MHz
100 MHz
1 GHz
1.8 GHz
0.25
1.8 GHz
10 0
0.2
0.15
0.1
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
2
4
6
8
10
12
14
16
VR
V
20
VR
Forward resistance rf = ƒ (I F)
Forward current IF = ƒ (VF)
f = 100 MHz
TA = Parameter
10 4
10 0
A
Ohm
10 -1
10 3
10 2
IF
rf
10 -2
10 -3
-40 °C
25 °C
85 °C
125 °C
10 1
10 -4
10 0
10 -1 -2
10
10 -5
10
-1
10
0
10
1
mA 10
10 -6
0
2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
4
2009-05-13
BAR50...
Forward current IF = ƒ (T S)
Forward current IF = ƒ (T S)
BAR50-02L
BAR50-02V
120
120
mA
100
100
90
90
80
80
IF
IF
mA
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
90 105 120 C°
75
TS
150
TS
Forward current IF = ƒ (T S)
Permissible Pulse Load RthJS = ƒ (t p)
BAR50-03W
BAR50-02L
10 2
120
mA
100
mA
RthJS
90
IF
80
70
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120 C°
10 0 -6
10
150
10
-5
10
-4
10
-3
10
-2
°C
10
0
tp
TS
5
2009-05-13
BAR50...
Permissible Pulse Load
Permissible Pulse Load RthJS = ƒ (t p)
IFmax / I FDC = ƒ (tp )
BAR50-02V
BAR50-02L
10 1
10 3
mA
10 2
R thJS
I Fmax/ IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
1
10 0
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
°C
10
10 -1 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Pulse Load
Permissible Pulse Load RthJS = ƒ (t p)
IFmax / I FDC = ƒ (tp )
BAR50-03W
BAR50-02V
10 3
IFmax /IFDC
10 1
RthjS
10 2
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
10
-1
s
10
10 -1 -6
10
1
tp
10
-5
10
-4
10
-3
10
-2
s
tp
6
2009-05-13
BAR50...
Permissible Pulse Load
Insertion loss IL = -|S21| 2 = ƒ(f)
IFmax / I FDC = ƒ (tp )
IF = Parameter
BAR50-03W
BAR50-02L in series configuration, Z = 50Ω
1
10
0
IFmax/I FDC
dB
100 mA
|S 21| 2
-0.2
0
0.005
0.1
0.2
0.5
1
2
5
10 mA
-0.3
5 mA
-0.4
-0.5
3 mA
-0.6
-0.7
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
-0.8
0
0
tp
1
2
3
4
GHz
6
f
Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR50-02L in series configuration, Z = 50Ω
0
|S21|2
dB
-10
-15
-20
0V
1V
10 V
-25
-30
0
1
2
3
4
GHz
6
f
7
2009-05-13
Package SC79
BAR50...
Package Outline
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
0.2 ±0.05
10˚MAX.
1.6 ±0.1
1
0.3 ±0.05
Cathode
marking
10˚MAX.
1.2 ±0.1
A
2
0.55 ±0.04
0.35
1.35
Foot Print
0.35
Marking Layout (Example)
2005, June
Date code
BAR63-02V
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Cathode
marking
0.4
0.93
0.2
8
1.96
Reel with 2 mm Pitch
2
1.33
Standard
4
Cathode
marking
8
0.66
2009-05-13
BAR50...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
9
2009-05-13
Package SOD323
BAR50...
Package Outline
0.9 +0.2
-0.1
+0.2
1.25 -0.1
0 ±0.05
A
1.7 +0.2
-0.1
Cathode
marking
0.45 ±0.15
2.5 ±0.2
2
1
0.3 +0.1
-0.05
+0.05
0.3 -0.2
0.15 +0.1
-0.06
0.25 M A
0.8
1.7
0.8
Foot Print
0.6
Marking Layout (Example)
BAR63-03W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2
2.9
8
4
Cathode
marking
0.65
1.35
10
1
2009-05-13
Package TSLP-2-1
BAR50...
Package Outline
Top view
Bottom view
0.4 +0.1
0.6 ±0.05
0.05 MAX.
1
1)
1)
0.5 ±0.035
Cathode
marking
0.25 ±0.035
2
1
1 ±0.05
0.65±0.05
2
1) Dimension applies to plated terminal
Foot Print
0.6
0.275
For board assembly information please refer to Infineon website "Packages"
Copper
Solder mask
0.375
0.275
0.35
1
0.3
0.925
0.35
0.45
Stencil apertures
Marking Layout (Example)
BAS16-02L
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
0.5
1.16
Cathode
marking
8
4
0.76
11
2009-05-13
BAR50...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
12
2009-05-13
Similar pages