TT OPV314AT Vertical cavity surface emitting laser in fc optical sub-assembly Datasheet

OPV314AT, OPV314YAT, OPV314YBT
Features:
 850 nm VCSEL technology
 High thermal stability
 Up to 2.5 Gbps
 Recommended for multimode fiber applications
 Microbead lens
 Pin out and attenuation options available upon request
 Burned in for communication level reliability
 High optical coupling to MM fiber
 ST style receptacle
Description:
The OPV314AT and OPV314BT are high performance 850nm VCSEL packaged for high speed communication links.
OPV314AT and OPV314BT combines all the performance advantages of a VCSEL with the addition of a power monitor diode
for precise control of optical power. The OPV314YAT and OPV314YBT are identical electrically and optically and differ only in
pin out. Refer to mechanical drawings for details. This product’s combination of features including high speed, high output
power and concentric beam makes it an ideal transmitter for integration into all types of data communications equipment.
Applications:






Fiber channel
Gigabit Ethernet
ATM
VSR (very short reach)
Intra-system links applications
Optical backplane interconnects
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue B
11/2016
Page 1
OPV314AT, OPV314YAT, OPV314YBT
Electrical Specifications
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
Total coupled power OPV314AT, OPV314YAT
50/125 µm fiber
OPV314YBT
600
µW
IF = 7 mA
PT50
400
µW
IF = 7 mA
ITH
Threshold current
0.8
3.0
mA
Note 1
VF
Forward voltage
1.6
2.2
V
IF = 7 mA
IR
Reverse current
100
nA
VR = 5 V
RS
Series resistance
55
Ohms
Note 2
ɳ
Slope efficiency
TYP
20
OPV314AT, OPV314YAT
OPV314YBT
MAX
UNITS
60
µW/mA
40
µW/mA
Note 3
IRPD
Reverse current, photodiode
IM
Monitor current
30
λ
Wavelength
840
∆λ
Optical bandwidth
tr
Rise time
90
Ps
20 to 80%
tf
Fall time
120
Ps
80 to 20%
Relatively intensity noise
-123
Db/Hz
∆ɳ/∆T
Temp coefficient of slope efficiency
-0.4
%/°C
0° - 70°C
∆ITH
Temp variance of threshold current
±1.0
mA
0° - 70°C
∆λ/∆T
Temp coefficient of wavelength
0.06
Nm/°C
0° - 70°C
∆Vf/∆T
Temperature coefficient for VF
-2.5
Mv/°C
NRI
30
TEST CONDITIONS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
nA
VR = 40 V
µA
IF = 7 mA, VR = 5 V
860
Nm
0.85
Nm
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue B
11/2016
Page 2
OPV314AT, OPV314YAT, OPV314YBT
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue B
11/2016
Page 3
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