Ordering number : EN6459C MCH6604 N-Channel Power MOSFET http://onsemi.com 50V, 0.25A, 7.8Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 50 V 0.25 A PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm)1unit V ±10 1 A 0.8 W 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-006 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 0.3 0.85 FD TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6604-TL-E 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 MCPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 6 5 4 1 2 3 82813 TKIM TC-00002988/71112 TKIM/52506PE MSIM TB-00002287/ No.6459-1/6 60100 TS (KOTO) TA-2459 MCH6604 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V Ratings min typ Unit max 50 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=50mA 130 V 1 μA ±10 μA 1.3 180 V mS RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ciss Ω 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) tr 18 ns 42 ns 190 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA 105 ns 1.57 nC 0.20 nC 0.32 IS=100mA, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit VDD=25V 4V 0V VIN PW=10μs D.C.≤1% ID=50mA RL=500Ω D VIN VOUT G P.G 50Ω S MCH6604 Ordering Information Device MCH6604-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb-Free No.6459-2/6 MCH6604 ID -- VDS 0.05 0.04 0.03 25° C 0.10 0.08 0.06 0.04 0.01 0.02 0 0.2 0.4 0.6 0.8 1.0 Drain to Source Voltage, VDS -- V 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 10 9 ID=30mA 50mA 6 5 4 3 1 2 3 4 5 6 7 8 Gate to Source Voltage, VGS -- V 9 10 3 2 Ta=75°C 25°C --25°C 10 7 5 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 2 --40 --20 0 20 40 60 80 5 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 160 IT00060 5 7 2 0.1 3 IT00057 RDS(on) -- ID VGS=1.5V 5 3 2 Ta=75°C 25°C --25°C 10 7 5 3 2 2 3 5 7 0.01 | yfs | -- ID 1.0 4 0 --60 Ta=75°C 25°C --25°C 7 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S 6 10 IT00058 V 2.5 S= .0V G V =4 A, 0m , V GS =3 A I D 50m I D= 8 2 1.0 0.001 3 12 10 3 7 RDS(on) -- Ta 14 VGS=4V 100 Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 3.0 IT00055 Drain Current, ID -- A VGS=2.5V 7 2.5 RDS(on) -- ID IT00056 RDS(on) -- ID 100 2.0 5 1.0 0.01 2 0 1.5 7 11 7 1.0 100 Ta=25°C 8 0.5 Gate to Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 Static Drain to Source On-State Resistance, RDS(on) -- Ω 0.12 0.02 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 0.14 75° C 6.0 V V V GS=1.5 Ta= --2 0.16 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 5°C 0.18 Drain Current, ID -- A 0.07 0.06 VDS=10V 5V V 2.0 2. 4.0V 0.08 Drain Current, ID -- A 3.0 3.5V 0.09 ID -- VGS 0.20 V 0.10 2 3 IT00059 VDS=10V 7 5 3 5°C Ta= --2 2 75°C 25°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00061 No.6459-3/6 MCH6604 IS -- VSD 5 Switching Time, SW Time -- ns --25 °C 5°C 5 25° C 7 Ta= 7 Source Current, IS -- A 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 2 10 Ciss 7 5 Coss 3 2 Crss 0 5 10 15 20 25 30 35 40 45 2 3 100μs 1m s 5 10 ms 10 2 DC 0.1 0m s op Operation in this area is limited by RDS(on). era tio n 3 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.0 2 3 5 7 10 7 0.1 IT00063 VGS -- Qg 8 7 6 5 4 3 2 0.2 0.4 0.6 0.8 2 3 Drain to Source Voltage, VDS -- V 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC IT00064 IDP=1A(PW≤10μs) ID=0.25A 5 VDS=10V ID=100mA 0 0 50 Allowable Power Dissipation, PD -- W Drain Current, ID -- A td(on) 2 1.8 IT00065 PD -- Ta 1.0 7 0.01 3 ASO 2 2 tr 5 1 Drain to Source Voltage, VDS -- V 5 7 10 1.0 7 tf 100 Drain Current, ID -- A Gate to Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 3 td(off) 2 9 5 1.0 3 IT00062 f=1MHz 7 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=25V VGS=4V 7 3 0.1 SW Time -- ID 1000 VGS=0V W 0.8 he nm ou nte do nc 0.6 era mi cs 0.4 ub str ate (90 0m m2 ✕0 .8m 0.2 m) 1u nit 0 5 7 100 IT01739 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01740 No.6459-4/6 MCH6604 Outline Drawing MCH6604-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6459-5/6 MCH6604 Note on usage : Since the MCH6604 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6459-6/6