MIMMG300D060B6EN 600V 300A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS GD Series Module □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit 600 V ±20 V TC=25°C 400 A TC=70°C 300 A tp=1ms 600 A 940 W TVj=25°C 600 V TC=25°C 400 A TC=70°C 300 A tp=1ms 600 A TVj =125°C, t=10ms, VR=0V 8000 A2 s IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT TVj=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current 2 It MIMMG300D060B6EN ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 4.9 5.8 6.5 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=4.8mA Collector - Emitter IC=300A, VGE=15V, TVj=25°C 1.45 V Saturation Voltage IC=300A, VGE=15V, TVj=125°C 1.6 V VCE=600V, VGE=0V, TVj=25°C 1 mA VCE=600V, VGE=0V, TVj=125°C 5 mA 400 nA ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance VCE=0V,VGE±15V, TVj=125°C VCE=300V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz -400 1 Ω 3.2 µC 19 nF 0.57 nF VCC=300V,IC=300A, TVj =25°C 110 ns RG =2.4Ω, TVj =125°C 120 ns VGE=±15V, TVj =25°C 50 ns Inductive Load TVj =125°C 60 ns VCC=300V,IC=300A, TVj =25°C 490 ns RG =2.4Ω, TVj =125°C 520 ns VGE=±15V, TVj =25°C 60 ns Inductive Load TVj =125°C 70 ns VCC=300V,IC=300A, TVj =25°C 2.0 mJ RG =2.4Ω, TVj =125°C 3.1 mJ VGE=±15V, TVj =25°C 9 mJ Inductive Load TVj =125°C 12 mJ 1500 A tpsc≤6µS , VGE=15V TVj=125°C,VCC=360V （ Per IGBT） 0.16 K /W Diode IF=300A , VGE=0V, TVj =25°C 1.55 V IF=300A , VGE=0V, TVj =125°C 1.50 V Max. Reverse Recovery Current IF=300A , VR=300V 235 A Qrr Reverse Recovery Charge diF/dt=-6500A/μs 24.0 µC Erec Reverse Recovery Energy TVj=125°C 6.2 mJ RthJCD Junction-to-Case Thermal Resistance （ Per Diode） VF Forward Voltage IRRM 0.32 K /W MIMMG300D060B6EN MODULE CHARACTERISTICS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Min. Typ. Max. Unit 175 °C TVj max Max. Junction Temperature TVj op Operating Temperature -40 150 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Torque Module-to-Sink Recommended（M6） 3 5 N· m Torque Module Electrodes Recommended（M6） 2.5 5 N· m AC, t=1min 3000 V 350 Weight 320 600 g 600 VGE =15V 480 360 TVj=25°C IC (A) IC (A) 480 240 360 TVj =125°C 240 TVj=125°C 120 120 0 0 0 1.2 1.6 2.0 2.4 VCE（V） Figure1. Typical Output characteristics 0.4 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE（V） Figure2. Typical Output characteristics 45 600 VCC=300V IC=300A VGE=±15V TVj =125°C VCE =20V 480 35 360 240 TVj =125°C Eon Eoff (mJ) IC (A) TVj =25°C Eon 25 15 Eoff 120 5 0 5 6 7 9 10 11 8 VGE（V） Figure3. Typical Transfer characteristics 0 0 4 12 16 20 8 RG（Ω） Figure4. Switching Energy vs. Gate Resistor MIMMG300D060B6EN 30 25 600 500 20 400 15 Eoff IC (A) Eon Eoff (mJ) 700 VCC=300V RG=2.4Ω VGE=±15V TVj =125°C 10 300 5 100 0 0 200 400 0 300 400 500 600 700 VCE（V） Figure6. Reverse Biased Safe Operating Area 600 IC（A） Figure5. Switching Energy vs. Collector Current 600 10 480 8 IF (A) 0 100 200 IF=300A VCE=300V TVj =125°C 6 4 240 120 2 TVj =25°C 0 0 0.8 1.6 1.2 2.0 VF（V） Figure7. Diode Forward Characteristics 0.4 0 4 8 12 16 RG（Ω） Figure8. Switching Energy vs. Gate Resistor 1 10 RG=2.4Ω VCE=300V TVj =125°C Diode ZthJC (K/W) 8 Erec (mJ) Erec (mJ) TVj =125°C 360 0 RG=2.4Ω VGE=±15V TVj =125°C 200 Eon 6 4 0.1 IGBT 0.01 2 0 0 200 400 600 IF (A) Figure9. Switching Energy vs. Forward Current 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure10. Transient Thermal Impedance MIMMG300D060B6EN Figure11. Circuit Diagram M6 8.5 30.0 30.5 2.8x0.5 22.0 93.0 6.0 Φ6.5 2 28.0 3 28.0 20.0 108.0 Dimensions (mm) Figure12. Package Outline 62.0 15.0 6.0 1 4 5 48.0 16.0 7 6 6.0 18