CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMOD™ U-Series Module 50 Amperes/1200 Volts TYP K S - NUTS (4 TYP) K N P GUP EUP L T - (4 TYP.) R M G VP E VP N L P B E Q P L N GUN EUN L G VN E VN U V TYP J TYP V Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R D A W - THICK x X - WIDE TAB (8 PLACES) H C F G U Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking P GUP EUP GVP EVP U V GUN EUN GVN EVN N Outline Drawing and Circuit Diagram Dimensions Inches A 2.83 B 3.58 C 1.16 +0.04/-0.02 Millimeters Dimensions Inches 72.0 M 0.74 91.0 Millimeters 18.7 N 0.75 19.1 29.5 +1.0/-0.5 P 0.57 14.4 D 2.17±0.01 55.0±0.25 Q 1.55 39.3 E 2.91±0.01 74.0±0.25 R 0.05 1.25 M4 Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50BU-24H is a 1200V (VCES), 50 Ampere FourIGBT IGBTMOD™ Power Module. F 0.16 4.0 S M4 G 1.02 26.0 T 0.22 Dia. H 0.31 8.1 U 1.61 41.0 J 0.79 20.0 V 0.69 17.5 Type Current Rating Amperes VCES Volts (x 50) K 0.39 10.0 W 0.02 0.5 CM 50 24 L 0.43 11.0 X 0.110 2.79 5.5 Dia. 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMOD™ U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50BU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 400 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb Weight – 390 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Gate Leakage Voltage Min. Typ. Max. ICES VCE = VCES, VGE = 0V Test Conditions – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5.0mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 50A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 187 Emitter-Collector Voltage* VEC IE = 50A, VGE = 0V – – 3.2 – nC Min. Typ. Max. Units – – 7.5 nf – – 2.6 nf – – 1.5 nf Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – 80 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time td(off) RG = 6.3Ω, Resistive – – 150 ns Times Fall Time tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 50A, diE/dt = -100A/μs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = -100A/μs – 0.28 – µC VCE = 10V, VGE = 0V Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/4 Module – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/4 Module – – 0.7 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.1 – °C/W Contact Thermal Resistance 2 Symbol Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMOD™ U-Series Module 50 Amperes/1200 Volts 100 12 15 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 80 11 60 10 40 9 20 8 0 2 4 6 8 40 20 0 4 8 12 16 4 3 2 1 0 20 0 20 40 60 80 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 50A 6 4 2 0 103 102 IC = 25A 0 4 8 12 16 101 100 1.0 20 1.5 2.0 2.5 3.0 3.5 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tf td(off) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 102 Coes 10-1 Cres di/dt = -100A/µsec Tj = 25°C trr EMITTER CURRENT, IE, (AMPERES) 102 101 GATE CHARGE, VGE 102 101 101 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Irr 101 100 100 10-2 10-1 4.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies VGE = 0V f = 1MHz EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(on) 100 100 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C 101 101 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) IC = 100A 8 100 Tj = 25°C 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 60 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) 80 0 10 5 VCE = 10V Tj = 25°C Tj = 125°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 400V 12 VCC = 600V 8 4 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 100 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM50BU-24H Four IGBTMOD™ U-Series Module 50 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3