Powerex Power CM50BU24H Four igbtmod u-series module 50 amperes/1200 volt Datasheet

CM50BU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Four IGBTMOD™
U-Series Module
50 Amperes/1200 Volts
TYP
K
S - NUTS
(4 TYP)
K
N
P
GUP EUP
L
T - (4 TYP.)
R
M
G VP E VP
N
L
P
B E
Q
P
L
N
GUN EUN
L
G VN E VN
U
V
TYP
J
TYP
V
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
R
D
A
W - THICK x X - WIDE
TAB (8 PLACES)
H
C
F
G
U
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
P
GUP
EUP
GVP
EVP
U
V
GUN
EUN
GVN
EVN
N
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
2.83
B
3.58
C
1.16 +0.04/-0.02
Millimeters
Dimensions
Inches
72.0
M
0.74
91.0
Millimeters
18.7
N
0.75
19.1
29.5 +1.0/-0.5
P
0.57
14.4
D
2.17±0.01
55.0±0.25
Q
1.55
39.3
E
2.91±0.01
74.0±0.25
R
0.05
1.25
M4
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50BU-24H is a
1200V (VCES), 50 Ampere FourIGBT IGBTMOD™ Power Module.
F
0.16
4.0
S
M4
G
1.02
26.0
T
0.22 Dia.
H
0.31
8.1
U
1.61
41.0
J
0.79
20.0
V
0.69
17.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
K
0.39
10.0
W
0.02
0.5
CM
50
24
L
0.43
11.0
X
0.110
2.79
5.5 Dia.
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM50BU-24H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
50
Amperes
ICM
100*
Amperes
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
400
Watts
Mounting Torque, M4 Main Terminal
–
15
in-lb
Mounting Torque, M5 Mounting
–
31
in-lb
Weight
–
390
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Collector-Cutoff Current
Gate Leakage Voltage
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
Test Conditions
–
–
1
Units
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5.0mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 50A, VGE = 15V, Tj = 125°C
–
2.85
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 50A, VGE = 15V
–
187
Emitter-Collector Voltage*
VEC
IE = 50A, VGE = 0V
–
–
3.2
–
nC
Min.
Typ.
Max.
Units
–
–
7.5
nf
–
–
2.6
nf
–
–
1.5
nf
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 50A,
–
–
80
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
Switch
Turn-off Delay Time
td(off)
RG = 6.3Ω, Resistive
–
–
150
ns
Times
Fall Time
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 50A, diE/dt = -100A/μs
–
–
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = -100A/μs
–
0.28
–
µC
VCE = 10V, VGE = 0V
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/4 Module
–
–
0.31
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/4 Module
–
–
0.7
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.1
–
°C/W
Contact Thermal Resistance
2
Symbol
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
100
12
15
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
80
11
60
10
40
9
20
8
0
2
4
6
8
40
20
0
4
8
12
16
4
3
2
1
0
20
0
20
40
60
80
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
IC = 50A
6
4
2
0
103
102
IC = 25A
0
4
8
12
16
101
100
1.0
20
1.5
2.0
2.5
3.0
3.5
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
tf
td(off)
tr
101
COLLECTOR CURRENT, IC, (AMPERES)
102
102
Coes
10-1
Cres
di/dt = -100A/µsec
Tj = 25°C
trr
EMITTER CURRENT, IE, (AMPERES)
102
101
GATE CHARGE, VGE
102
101
101
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Irr
101
100
100
10-2
10-1
4.0
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Cies
VGE = 0V
f = 1MHz
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
td(on)
100
100
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 125°C
101
101
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
IC = 100A
8
100
Tj = 25°C
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Tj = 25°C
REVERSE RECOVERY TIME, trr, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
60
VGE = 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
SWITCHING TIME, (ns)
80
0
10
5
VCE = 10V
Tj = 25°C
Tj = 125°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
100
0
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 50A
16
VCC = 400V
12
VCC = 600V
8
4
0
0
50
100
150
200
250
GATE CHARGE, QG, (nC)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.31°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
4
100
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.7°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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