SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 300V 300V 250V 7V 20A 25A 4A 110W 0.63W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.59 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8172 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector Cut-Off Current VCE = 200V IB = 0 1.5 ICEX Collector Cut-Off Current VCE = 300V VBE = -1.5V 1.5 IEBO Emitter Cut-Off Current VEB = 5V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = 10mA 250 IE = 1.0mA 7 (1) V(BR)CEO V(BR)EBO (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ TC = 125°C Max. Units mA 6 IC = 0 1.0 IC = 5A IB = 0.5A 1.0 IC = 10A IB = 1.25A 1.5 IC = 10A IB = 1.25A 1.5 IC = 5A VCE = 4V 20 IC = 10A VCE = 4V 10 IC = 1.0A VCE = 15V V 60 DYNAMIC CHARACTERISTICS fT Transition Frequency ton Turn-On Time ts Storage Time IC = 10A tf Fall Time IB1 = -IB2 = 1.25A 8 MHz f = 10MHz IC = 10A VCC = 150V IB1 = 1.25A VCC = 150V 1.0 µs 2 0.5 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8172 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8172 Issue 1 Page 3 of 3