AOB414 N-Channel SDMOS TM Power Transistor General Description Product Summary The AOB414/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.AOB414 and AOB414L are electrically identical. VDS ID (at VGS=10V) 100V 51A RDS(ON) (at VGS=10V) < 25mΩ RDS(ON) (at VGS = 7V) < 31mΩ 100% UIS Tested 100% Rg Tested -RoHS Compliant TO-263 D2PAK Top View D Bottom View D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 100 6.6 IDSM TA=70°C ±25 36 IDM TA=25°C Units V 51 ID TC=100°C Maximum 100 A 5.3 Avalanche Current C IAR 28 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 39 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev1: May 2012 2.5 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s W 75 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 150 PD -55 to 175 Typ 11 40 0.7 °C Max 14 50 1 Units °C/W °C/W °C/W Page 1 of 7 AOB414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 100 nA 4 V 20.5 25 36 43 VGS=7V, ID=15A 25 31 mΩ 37 1 V 40 A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime A 0.66 mΩ S 1400 1770 2200 pF VGS=0V, VDS=50V, f=1MHz 115 165 214 pF 33 55 80 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω 14 28 42 nC 4 9 14 nC 10 14 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 100 Static Drain-Source On-Resistance Output Capacitance Units 3.3 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=10V, VDS=50V, ID=20A 6 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 20 29 37 Qrr 25 36 47 trr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time 12 20 26 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 60 82 110 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 4 ns 17 ns 5 ns ns nC ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: May 2012 www.aosmd.com Page 2 of 7 AOB414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 8V 10V 7V 50 40 ID(A) 40 ID (A) VDS=5V 50 6.5V 30 125°C 30 20 20 25°C VGS=6V 10 10 0 0 0 1 2 3 4 3 5 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=7V 30 25 VGS=10V 20 15 Normalized On-Resistance 2.4 35 RDS(ON) (mΩ Ω) 4 10 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=7V ID=15A 1.2 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 60 1.0E+02 ID=20A 1.0E+01 50 125°C 125°C 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 30 25°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 1.0E-04 1.0E-05 10 6 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: May 2012 7 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOB414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=50V ID=20A 2000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 Coss 500 0 Crss 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100 TJ(Max)=175°C TA=25°C 10µs 10µs 100.0 RDS(ON) 10.0 100µs Power (W) ID (Amps) 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000.0 1ms DC 1.0 0.1 10ms 17 5 2 10 1000 TJ(Max)=175°C TA=25°C 0.0 100 0.01 0.1 1 10 VDS (Volts) 100 1000 0.00001 0.0001 0.001 10 0.01 0.1 1 0 18 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.0°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: May 2012 www.aosmd.com Page 4 of 7 AOB414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 40 Power Dissipation (W) IAR (A) Peak Avalanche Current 50 TA=25°C 30 TA=100°C TA=150°C 20 TA=125°C 10 150 120 90 60 30 0 0 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 60 50 50 40 40 Power (W) Current rating ID(A) 0.000001 30 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 175 TA=25°C 30 20 20 10 10 0 0 0 25 50 75 100 125 150 0.01 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: May 2012 www.aosmd.com Page 5 of 7 AOB414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 15 24 2 125ºC di/dt=800A/µs 125ºC 250 di/dt=800A/µs 20 12 1.6 6 125ºC S 3 Qrr 50 0 10 15 20 25 0.4 25ºC 0 30 0 IS (A) -RoHS Compliant Figure 17: Diode Reverse Recovery Charge and Peak -Halogen Free Current vs. Conduction Current 150 30 Is=20A 10 15 0 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 5 Is=20A 125ºC 25 14 Qrr 60 125ºC 10 25ºC 30 -2 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: May 2012 15 3 2.5 2 10 1.5 125ºC 6 2 Irm trr 25ºC trr (ns) 25ºC 3.5 20 18 90 4.5 4 22 Irm (A) Qrr (nC) 120 5 30 26 125ºC 125ºC 4 25ºC 5 0.8 8 100 0 1.2 25ºC S 150 trr 12 S 9 25ºC Irm trr (ns) 200 Irm (A) Qrr (nC) 16 25ºC 5 1 S 0 0.5 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AOB414 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: May 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7