EID1415A1-5 UPDATED 07/12/2007 14.40-15.35 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1415A1-5 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1200mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1200mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1200mA MIN TYP MAX UNITS 37.0 37.5 dBm 6.5 7.5 dB ±0.6 dB 35 % Id1dB Drain Current at 1dB Compression f = 14.40-15.35GHz 1400 1800 mA IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 2080 2880 mA VP Pinch-off Voltage VDS = 3 V, IDS = 20 mA -2.5 -4.0 V RTH Thermal Resistance3 4.5 5.5 o C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1415A1-5 14.40-15.35 GHz 5-Watt Internally-Matched Power FET UPDATED 07/12/2007 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -4.5 V IDS Drain Current IDSS IGSF Forward Gate Current 40 mA PIN Input Power PT Total Power Dissipation 23 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1200mA S11 and S22 0 2. 0. .4 4 .0 3. 10 0 4. .0 5 .0 -0 . 0 0 .2 2 -1 0. 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10 .0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 0 DB(|S[2,1]|) * EID1415-5 -10 DB(|S[1,2]|) * EID1415-5 10 .0 -1 0. 0 2 0 5. 0 .0 .0 4 -30 -1.0 1.0 -2 0. 8 -0 .8 6 0 0 -0 0. 0 .6 3. 2. 14 .0 0. -3 4. .4 -4 -0 -20 0 .2 - 5. - 0. 0 S 2 1 a n d S 1 2 (d B ) 1.0 0. 8 6 0. S[2,2] * EID1415-5 S21 and S12 20 -0 .6 -5 . Swp Max 16GHz -0 .0 -4 -0 .8 -2 -3 -1.0 S[1,1] * EID1415-5 14.5 Swp Min 14GHz 15 Frequency (GHz) 15.5 16 FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 14.00 14.20 14.40 14.60 14.80 15.00 15.20 15.40 15.60 15.80 16.00 0.486 0.438 0.369 0.285 0.188 0.088 0.061 0.151 0.245 0.322 0.389 2.134 2.225 2.312 2.380 2.417 2.417 2.375 2.306 2.200 2.087 1.973 0.053 0.054 0.060 0.062 0.065 0.064 0.066 0.061 0.061 0.060 0.056 0.469 0.410 0.343 0.277 0.238 0.249 0.290 0.340 0.383 0.411 0.424 -82.890 -93.780 -106.050 -119.390 -137.440 -167.830 87.400 41.970 22.850 8.370 -3.480 -168.830 177.610 163.060 147.370 131.260 114.830 98.420 82.120 66.090 50.830 36.210 -178.670 167.150 151.050 136.610 120.170 102.290 87.850 69.710 55.880 40.490 25.780 -164.400 -177.270 167.160 144.230 113.450 79.350 52.140 32.490 17.290 4.630 -7.330 Issued Date: 04-27-04 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised July 2007 EID1415A1-5 UPDATED 07/12/2007 14.40-15.35 GHz 5-Watt Internally-Matched Power FET Power De-rating Curve Total Power Dissipation (W) Power Dissipation vs. Temperature 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Potentially Unsafe Operating Region Safe Operating Region 0 25 50 75 100 Case Temperature (°C) 125 150 Typical Power Data (VDS = 10 V, IDSQ = 1200 mA) P-1dB & G-1dB vs Frequency 11 39 10 38 9 37 8 36 7 35 6 P-1dB (dBm) 34 14.2 G-1dB (dB) P-1dB (dBm) 40 14.4 14.6 14.8 15.0 15.2 G-1dB (dB) 15.4 5 15.6 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID1415A1-5 14.40-15.35 GHz 5-Watt Internally-Matched Power FET UPDATED 07/12/2007 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics .060 MIN. .650±.008 .512 .060 MIN. EID1415A1-5 DRAIN GATE .319 .022 YYWW SN .045 .094 .382 .004 .129 .070 ±.008 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Notes: Part Number Grade1 fTest (GHz) P1dB (min) EID1415A1-5 Industrial 14.40-15.35 GHz 37.0 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007