BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application. www.onsemi.com POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS COLLECTOR 2, 4 Features • Low Base Drive Requirement • High Peak DC Current Gain • Extremely Low Storage Time Min/Max Guarantees Due to 1 BASE the H2BIP Structure which Minimizes the Spread • Integrated Collector−Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible • 3 EMITTER 4 Parameter Spreads These Devices are Pb−Free and are RoHS Compliant* TO−220 CASE 221A STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 400 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 12 Vdc Collector Current − Continuous IC 5 Adc ICM 10 Adc IB 2 Adc Base Current − Peak (Note 1) IBM 4 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 75 0.6 W W/_C −65 to +150 _C Collector Current − Peak (Note 1) Base Current − Continuous Operating and Storage Temperature TJ, Tstg 1 2 3 MARKING DIAGRAM BUL45D2G AY WW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 BUL45D2G Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BUL45D2/D BUL45D2G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristics RqJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W TL 260 _C Min Typ Max Unit 400 450 − 700 910 − 12 14.1 − − − 100 Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C (VCE = 500 V, VEB = 0) @ TC = 125°C ICES Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc − − − − 100 500 − − 100 − − 100 mAdc ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) @ TC = 25°C @ TC = 125°C (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) @ TC = 25°C @ TC = 125°C (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C (IC = 0.8 Adc, IB = 40 mAdc) @ TC = 25°C @ TC = 125°C VCE(sat) DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C Vdc − − 0.8 0.7 1 0.9 − − 0.89 0.79 1 0.9 Vdc − − 0.28 0.32 0.4 0.5 − − 0.32 0.38 0.5 0.6 − − 0.46 0.62 0.75 1 22 20 34 29 − − 10 7 14 9.5 − − hFE − DIODE CHARACTERISTICS VEC Forward Diode Voltage (IEC = 1 Adc) @ TC = 25°C @ TC = 125°C (IEC = 2 Adc) @ TC = 25°C @ TC = 125°C (IEC = 0.4 Adc) @ TC = 25°C @ TC = 125°C www.onsemi.com 2 V − − 1.04 0.7 1.5 − − − 1.2 − 1.6 − − − 0.85 0.62 1.2 − BUL45D2G ELECTRICAL CHARACTERISTICS (continued) (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DIODE CHARACTERISTICS Forward Recovery Time (see Figure 27) (IF = 1 Adc, di/dt = 10 A/ms) @ TC = 25°C (IF = 2 Adc, di/dt = 10 A/ms) @ TC = 25°C (IF = 0.4 Adc, di/dt = 10 A/ms) @ TC = 25°C Tfr ns − 330 − − 360 − − 320 − − 13 − − 50 75 − 340 500 − − 3.7 9.4 − − V DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob Input Capacitance (VEB = 8 Vdc) Cib MHz pF pF DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 IC = 1 A IB1 = 100 mA VCC = 300 V @ 1 ms @ TC = 25°C @ TC = 125°C @ 3 ms @ TC = 25°C @ TC = 125°C − − 0.35 2.7 − − V IC = 2 A IB1 = 0.8 A VCC = 300 V @ 1 ms @ TC = 25°C @ TC = 125°C − − 3.9 12 − − V @ 3 ms @ TC = 25°C @ TC = 125°C − − 0.4 1.5 − − V VCE(dsat) SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−on Time Turn−off Time Turn−on Time Turn−off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton − − 90 105 150 − ns @ TC = 25°C @ TC = 125°C toff − − 1.15 1.5 1.3 − ms IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton − − 90 110 150 − ns @ TC = 25°C @ TC = 125°C toff 2.1 − − 3.1 2.4 − ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time Storage Time IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc Crossover Time Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc @ TC = 25°C @ TC = 125°C tf − − 90 93 150 − ns @ TC = 25°C @ TC = 125°C ts − − 0.72 1.05 0.9 − ms @ TC = 25°C @ TC = 125°C tc − − 95 95 150 − ns @ TC = 25°C @ TC = 125°C tf − − 80 105 150 − ns @ TC = 25°C @ TC = 125°C ts 1.95 − − 2.9 2.25 − ms @ TC = 25°C @ TC = 125°C tc − − 225 450 300 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 BUL45D2G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V TJ = 125°C 60 TJ = 25°C 40 TJ = -20°C TJ = 125°C 80 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V 80 TJ = 25°C 60 40 TJ = -20°C 20 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.001 10 Figure 1. DC Current Gain @ 1 Volt 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. DC Current Gain @ 5 Volt 4 10 TJ = 25°C IC/IB = 5 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 3 2 5A 1 1A 2A 3A 1 TJ = 125°C 4A TJ = -20°C IC = 500 mA 0 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) 0.1 0.001 10 Figure 3. Collector Saturation Region 10 Figure 4. Collector−Emitter Saturation Voltage 10 10 IC/IB = 20 VCE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 TJ = -20°C 1 TJ = -20°C TJ = 25°C TJ = 125°C TJ = 125°C TJ = 25°C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.001 10 Figure 5. Collector−Emitter Saturation Voltage 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. Collector−Emitter Saturation Voltage www.onsemi.com 4 BUL45D2G TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = 25°C TJ = -20°C 1 TJ = 125°C TJ = -20°C 1 TJ = 125°C TJ = 25°C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.001 10 Figure 7. Base−Emitter Saturation Region 10 Figure 8. Base−Emitter Saturation Region 10 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = -20°C 1 TJ = 125°C TJ = 25°C 0.1 0.001 125°C 0.1 0.01 10 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 25°C 1 Figure 9. Base−Emitter Saturation Region 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 10. Forward Diode Voltage 1000 1000 Cib (pF) TJ = 25°C f(test) = 1 MHz BVCER @ 10 mA 900 BVCER (VOLTS) 100 Cob (pF) 10 TJ = 25°C 800 700 600 BVCER(sus) @ 200 mA 500 400 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 11. Capacitance 100 RBE (W) Figure 12. BVCER = f(ICER) www.onsemi.com 5 1000 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 5 1000 t, TIME (ns) 800 TJ = 125°C TJ = 25°C 600 IC/IB = 10 400 3 2 IC/IB = 5 0 0 0.5 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 1 4 3.5 0.5 1.5 2 2.5 3 3.5 4 Figure 14. Resistive Switch Time, toff 5 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 5 2 1 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 4 t, TIME (s) μ 3 t, TIME (s) μ 1 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switch Time, ton 3 2 1 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 0 0 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 0 4 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 600 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 500 TJ = 125°C TJ = 25°C IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH 300 tc t, TIME (ns) 400 t, TIME (ns) IC/IB = 5 TJ = 125°C TJ = 25°C 1 200 IBon = IBoff VCC = 300 V PW = 20 ms IC/IB = 10 4 t, TIME (s) μ IBon = IBoff VCC = 300 V PW = 20 ms 300 200 200 100 100 TJ = 125°C TJ = 25°C tfi 0 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 0 4 0 Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5 1 2 3 IC, COLLECTOR CURRENT (AMPS) Figure 18. Inductive Switching, tfi @ IC/IB = 10 www.onsemi.com 6 4 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 1500 5 t, TIME (ns) 1000 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C t si , STORAGE TIME (μs) IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH 500 IC = 1 A 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 3 IC = 2 A 0 2 0 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 0 5 Figure 19. Inductive Switching, tc @ IC/IB = 10 20 15 Figure 20. Inductive Storage Time 450 1400 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 1200 t c , CROSSOVER TIME (ns) 350 t fi , FALL TIME (ns) 10 hFE, FORCED GAIN IC = 1 A 250 150 1000 TJ = 125°C TJ = 25°C IC = 2 A 800 600 400 200 IC = 2 A IC = 1 A 0 50 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 2 20 Figure 21. Inductive Fall Time 8 10 12 14 hFE, FORCED GAIN 16 18 20 360 2000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH t fr , FORWARD RECOVERY TIME (ns) IB1 = IB2 t, TIME (ns) 6 Figure 22. Inductive Crossover Time 3000 IB = 50 mA 1000 4 IB = 100 mA IB = 200 mA IB = 500 mA dI/dt = 10 A/ms TC = 25°C 340 320 IB = 1 A 0 0.5 300 1 3 2 2.5 1.5 IC, COLLECTOR CURRENT (AMPS) 3.5 4 0 Figure 23. Inductive Storage Time, tsi 0.5 1 1.5 IF, FORWARD CURRENT (AMP) Figure 24. Forward Recovery Time tfr www.onsemi.com 7 2 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS VCE dyn 1 ms dyn 3 ms 0V 90% IB 1 ms IB 3 ms TIME Figure 25. Dynamic Saturation Voltage Measurements 10 9 IC 90% IC 8 tfi tsi 7 6 Vclamp 5 10% IC 10% Vclamp tc 4 3 IB 90% IB1 2 1 0 0 1 2 3 4 TIME 5 6 7 8 Figure 26. Inductive Switching Measurements VFRM VFR (1.1 VF unless otherwise specified) VF VF tfr 0.1 VF 0 IF 10% IF 0 2 4 6 Figure 27. tfr Measurements www.onsemi.com 8 8 10 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A COMMON 50 W MJE210 MTP12N10 150 W 3W 500 mF IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA 1 mF -Voff Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 6 1 ms 10 10 ms 5 ms 1 DC 0.1 1 ms EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 0.01 TC ≤ 125°C GAIN ≥ 5 LC = 2 mH 5 4 3 2 -5 V 1 0V -1.5 V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 200 Figure 28. Forward Bias Safe Operating Area 300 400 600 700 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 29. Reverse Bias Safe Operating Area www.onsemi.com 9 800 BUL45D2G TYPICAL CHARACTERISTICS POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 100 60 80 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 30. Forward Bias Power Derating Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 t, TIME (ms) Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2 www.onsemi.com 10 100 1000 BUL45D2G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BUL45D2/D