Am29LV400B KGD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 23427 Revision C Amendment 0 Issue Date October 15, 2003 THIS PAGE LEFT INTENTIONALLY BLANK. SUPPLEMENT Am29LV400B Known Good Die 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.7 to 3.6 V for read, program, and erase operations — Ideal for battery-powered applications ■ Manufactured on 0.32 µm process technology ■ High performance — 60R, 70, 80, 90, or 120 ns access time ■ Low power consumption (typical values at 5 MHz) ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write cycle guarantee per sector ■ Compatibility with JEDEC standards — 200 nA Automatic Sleep mode current — Pinout and software compatible with singlepower supply Flash — 200 nA standby mode current — Superior inadvertent write protection — 7 mA read current — 15 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■ 20-year data retention at 125°C ■ Tested to datasheet specifications at temperature ■ Quality and reliability levels equivalent to standard packaged components ■ Top or bottom boot block configurations available Publication# 23427 Rev: C Amendment/0 Issue Date: October 15, 2003 S U P P L E M E N T GENERAL DESCRIPTION The Am29LV400B in Known Good Die (KGD) form is an 4 Mbit, 3.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29LV400B Features The Am29LV400B is an 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. No VPP is required for program or erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# terminates any operation in progress and resets the internal state machine to reading array data. The RESET# may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Electrical Specifications Refer to the Am29LV400B data sheet, publication number 21523, for full electrical specifications on the Am29LV400B in KGD form. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. 2 Am29LV400B Known Good Die S U P P L E M E N T PRODUCT SELECTOR GUIDE Family Part Number Speed Option & Voltage Operating Range, VCC Am29LV400B KGD 3.0 – 3.6 V -60R 2.7 – 3.6 V -70 -80 -90 -120 Max Access Time, tACC (ns) 60 70 80 90 120 Max CE# Access, tCE (ns) 60 70 80 90 120 Max OE# Access, tOE (ns) 30 30 30 35 50 Note: Refer to “Test Conditions” for additional information related to speed options. DIE PHOTOGRAPH DIE PAD LOCATIONS 9 8 7 6 5 4 3 2 1 43 42 41 40 39 38 37 36 35 10 34 11 33 12 32 AMD logo location 22 13 14 15 16 17 18 19 20 21 Am29LV400B Known Good Die 23 24 25 26 27 28 29 30 31 3 S U P P L E M E N T PAD DESCRIPTION Pad locations relative to die center. Pad Signal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A–1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y –0.90 80.50 –13.00 80.50 –18.90 80.50 –24.80 80.50 –30.70 80.50 –36.50 80.50 –42.40 80.50 –48.30 80.50 –54.20 80.50 –63.60 78.90 –63.60 68.90 –63.60 58.80 –63.30 –79.00 –55.90 –79.00 –50.50 –79.00 –44.70 –79.00 –39.30 –79.00 –33.40 –79.00 –28.00 –78.70 –22.10 –79.00 –16.60 –79.00 –7.10 –82.80 10.20 –82.80 22.20 –79.00 28.00 –79.00 33.40 –79.00 39.30 –79.00 44.70 –79.00 50.50 –79.00 55.90 –79.00 63.30 –79.00 63.60 58.60 63.60 68.70 63.60 78.70 54.20 81.40 46.60 80.50 40.70 80.50 34.90 80.50 28.90 80.50 23.10 80.50 17.20 80.50 11.40 80.50 5.40 80.50 Pad Center (millimeters) X Y –0.02 2.04 –0.33 2.04 –0.48 2.04 –0.63 2.04 –0.78 2.04 –0.93 2.04 –1.08 2.04 –1.23 2.04 –1.38 2.04 –1.62 2.00 –1.62 1.75 –1.62 1.49 –1.61 –2.01 –1.42 –2.01 –1.28 –2.01 –1.14 –2.01 –1.00 –2.01 –0.85 –2.01 –0.71 –2.00 –0.56 –2.01 –0.42 –2.01 –0.18 –2.10 0.26 –2.10 0.56 –2.01 0.71 –2.01 0.85 –2.01 1.00 –2.01 1.14 –2.01 1.28 –2.01 1.42 –2.01 1.61 –2.01 1.62 1.49 1.62 1.75 1.62 2.00 1.38 2.07 1.18 2.04 1.03 2.04 0.89 2.04 0.73 2.04 0.59 2.04 0.44 2.04 0.29 2.04 0.14 2.04 Note: The coordinates above are relative to die center and can be used to operate wire bonding equipment. 4 Am29LV400B Known Good Die S U P P L E M E N T PAD DESCRIPTION Pad locations relative to VCC. Pad Signal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A–1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y 0.00 0.00 –12.10 0.00 –18.00 0.00 –23.90 0.00 –29.80 0.00 –35.60 0.00 –41.50 0.00 –47.40 0.00 –53.30 0.00 –62.70 –1.60 –62.70 –11.60 –62.70 –21.70 –62.40 –159.50 –55.00 –159.50 –49.60 –159.50 –43.80 –159.50 –38.40 –159.50 –32.50 –159.50 –27.10 –159.20 –21.20 –159.50 –15.70 –159.50 –6.20 –163.30 11.10 –163.30 23.10 –159.50 28.90 –159.50 34.30 –159.50 40.20 –159.50 45.60 –159.50 51.40 –159.50 56.80 –159.50 64.20 –159.50 64.50 –21.90 64.50 –11.80 64.50 –1.80 55.10 0.90 47.50 0.00 41.60 0.00 35.80 0.00 29.80 0.00 24.00 0.00 18.10 0.00 12.30 0.00 6.30 0.00 Pad Center (millimeters) X Y 0.00 0.00 –0.31 0.00 –0.46 0.00 –0.61 0.00 –0.76 0.00 –0.90 0.00 –1.05 0.00 –1.20 0.00 –1.35 0.00 –1.59 –0.04 –1.59 –0.29 –1.59 –0.55 –1.58 –4.05 –1.40 –4.05 –1.26 –4.05 –1.11 –4.05 –0.98 –4.05 –0.83 –4.05 –0.69 –4.04 –0.54 –4.05 –0.40 –4.05 –0.16 –4.15 0.28 –4.15 0.59 –4.05 0.73 –4.05 0.87 –4.05 1.02 –4.05 1.16 –4.05 1.31 –4.05 1.44 –4.05 1.63 –4.05 1.64 –0.56 1.64 –0.30 1.64 –0.05 1.40 0.02 1.21 0.00 1.06 0.00 0.91 0.00 0.76 0.00 0.61 0.00 0.46 0.00 0.31 0.00 0.16 0.00 Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment. Am29LV400B Known Good Die 5 S U P P L E M E N T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV400B T -70 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 210 die per 5 tray stack DT = Surftape™ (Tape and Reel) 2500 per 7-inch reel DW = Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29LV400B Known Good Die 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory 3.0 Volt-only Program and Erase Valid Combinations AM29LV400BT-60R AM29LV400BB-60R AM29LV400BT-70 AM29LV400BB-70 VCC Range DPC 1, DPI 1, DTC 1, DTI 1, DWC 1, DWI 1 3.0–3.6 V DPC 1, DPI 1, DPE 1 DTC 1, DTI 1, DTE 1 DWC 1, DWI 1, DWE 1 2.7–3.6 V Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. AM29LV400BT-80 AM29LV400BB-80 AM29LV400BT-90 AM29LV400BB-90 AM29LV400BT-120 AM29LV400BB-120 6 Am29LV400B Known Good Die S U P P L E M E N T PACKAGING INFORMATION Surftape Packaging Direction of Feed 16 mm Orientation relative to leading edge of tape and reel AMD logo location Gel-Pak and Waffle Pack Packaging Orientation relative to top left corner of Gel-Pak and Waffle Pack cavity plate AMD logo location Am29LV400B Known Good Die 7 S U P P L E M E N T PRODUCT TEST FLOW Figure 1 provides an overview of AMD’s Known Good Die test flow. For more detailed information, refer to the Am29LV400B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, Wafer Sort 1 Bake 24 hours at 250°C Wafer Sort 2 Wafer Sort 3 High Temperature Packaging for Shipment an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in. DC Parameters Functionality Programmability Erasability Data Retention DC Parameters Functionality Programmability Erasability DC Parameters Functionality Programmability Erasability Speed Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack Shipment Figure 1. 8 AMD KGD Product Test Flow Am29LV400B Known Good Die S U P P L E M E N T PHYSICAL SPECIFICATIONS MANUFACTURING INFORMATION Die dimensions . . . . . . . . . . . . . . 185 mils x 140 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 4.70 mm x 3.56 mm Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . .500 µm Manufacturing ID (Top Boot) . . . . . . . . . . . . .98F03AK Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm (Bottom Boot). . . . . . . . 98F03ABK Pad Area Free of Passivation . . . . . . . . . .13.99 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C SPECIAL HANDLING INSTRUCTIONS Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. TEST CONDITIONS 3.3 V Test Condition 2.7 kΩ Device Under Test CL 60R, 70, 80 90, 120 Unit Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V 6.2 kΩ Note:Diodes are IN3064 or equivalent Figure 1. Table 1. Test Setup Test Specifications Test Condition 60R, 70, 80 Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels 90, 120 Unit 1 TTL gate 30 100 pF 5 ns 0.0–3.0 V Am29LV400B Known Good Die 9 S U P P L E M E N T TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to unpackaged die under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants unpackaged die of its manufacture (“Known Good Die” or “Die”) against defective materials or workmanship for a period of one (1) year from date of shipment. This warranty does not extend beyond the first purchaser of said Die. Buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of Known Good Die (including but not limited to proper Die preparation, Die attach, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in AMD’s specifications for Known Good Die, and AMD assumes no responsibility for environmental effects on Known Good Die or for any activity of Buyer or a third party that damages the Die due to improper use, abuse, negligence, improper installation, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other than AMD (“Warranty Exclusions”). The liability of AMD under this warranty is limited, at AMD’s option, solely to repair the Die, to send replacement Die, or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the Die returned to AMD, provided that: (a) AMD is promptly notified by Buyer in writing during the applicable warranty period of any defect or nonconformity in the Known Good Die; (b) Buyer obtains authorization from AMD to return the defective Die; (c) the defective Die is returned to AMD by Buyer in accordance with AMD’s shipping instructions set forth below; and (d) Buyer shows to AMD’s satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the abovereferenced Warranty Exclusions. Buyer shall ship such defective Die to AMD via AMD’s carrier, collect. Risk of loss will transfer to AMD when the defective Die is provided to AMD’s carrier. If Buyer fails to adhere to these warranty returns guidelines, Buyer shall assume all risk of loss and shall pay for all freight to AMD’s specified location. The aforementioned provisions do not extend the original warranty period of any Known Good Die that has either been repaired or replaced by AMD. 10 WITHOUT LIMITING THE FOREGOING, EXCEPT TO THE EXTENT THAT AMD EXPRESSLY WARRANTS TO BUYER IN A SEPARATE AGREEMENT SIGNED BY AMD, AMD MAKES NO WARRANTY WITH RESPECT TO THE DIE’S PROCESSING OF DATE DATA, AND SHALL HAVE NO LIABILIT Y FOR DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR ANY OTHER THEORY, DUE TO THE FAILURE OF SUCH KNOWN GOOD DIE TO PROCESS ANY PARTICULAR DATA CONTAINING DATES, INCLUDING DATES IN AND AFTER THE YEAR 2000, WHETHER OR NOT AMD RECEIVED NOTICE OF THE POSSIBILITY OF SUCH DAMAGES. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD’s PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYER’S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIE AND AMD SHALL NOT IN ANY EVENT BE LIABLE FOR INCREASED MANUFACTURING COSTS, DOWNTIME COSTS, DAMAGES RELATING TO BUYER’S PROCUREMENT OF SUBSTITUTE DIE (i.e., “COST OF COVER”), LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF OR DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL OR CONSEQUENTIAL DAMAGES BY REASON OF THE FACT THAT SUCH KNOWN GOOD DIE SHALL HAVE BEEN DETERMINED TO BE DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD’s warranty. Known Good Die are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the Die can reasonably be expected to result in a personal injury. Buyer’s use of Known Good Die for use in life support applications is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale. Am29LV400B Known Good Die S U P P L E M E N T REVISION SUMMARY Revision A (December 10, 1999) Initial release. Revision B (December 10, 2001) Added 60R, 70 speed options. Added test conditions section. Revision B+1 (March 12, 2002) Pad Description Added table of pad locations relative to die center. Corrected X,Y orientation for pad locations relative to VCC. Manufacturing Information Changed test facility to Penang, Malaysia (ACN2016). Revision C (October 15, 2003) Pad Description - Pad Locations Relative to Die Center Modified Pad Center (mils), Y, #12 to 58.80, and Pad Center (millimeters), Y, #12 to 1.49. Am29LV400B Features Removed last sentence of 2nd paragraph (The device can also be programmed in standard EPROM programmers). Removed mention of “pin”. Trademarks Updated to 2003. Trademarks Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29LV400B Known Good Die 11 Representatives in U.S. and Canada Sales Offices and Representatives North America ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2 ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0 CALIFORNIA, Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0 Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0 COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0 CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0 FLORIDA, Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5 Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3 GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4 ILLINOIS, Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2 MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0 MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4 MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5 NEW JERSEY, Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7 NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0 NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0 OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0 PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7 SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7 TEXAS, Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0 Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4 Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4 VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8 International AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2 BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0 BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5 CHINA, Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8 Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8 Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0 FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7 FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0 GERMANY, Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0 Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0 HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8 ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1 INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0 JAPAN, Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0 Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0 KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0 RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22 SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0 TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5 UNITED KINGDOM, Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 7 6 - 8 0 3 1 0 0 Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8 Advanced Micro Devices reserves the right to make changes in its product without notice in order to improve design or performance characteristics.The performance characteristics listed in this document are guaranteed by specific tests, guard banding, design and other practices common to the industry. For specific testing details, contact your local AMD sales representative.The company assumes no responsibility for the use of any circuits described herein. © Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD Arrow logo and combination thereof, are trademarks of Advanced Micro Devices, Inc. Other product names are for informational purposes only and may be trademarks of their respective companies. es ARIZONA, Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0 CALIFORNIA, Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0 Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3 San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0 Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0 CANADA, Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0 Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7 Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0 Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0 St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1 COLORADO, Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6 FLORIDA, Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6 Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9 Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5 St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3 GEORGIA, Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8 ILLINOIS, Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0 INDIANA, Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1 IOWA, Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0 KANSAS, Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2 MASSACHUSETTS, Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0 MICHIGAN, Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7 MINNESOTA, St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0 MISSOURI, St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8 NEW JERSEY, Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4 NEW YORK, Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6 East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3 Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0 Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2 NORTH CAROLINA, Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8 OHIO, Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0 Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5 Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0 Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0 OREGON, Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7 UTAH, Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0 VIRGINIA, Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5 WASHINGTON, Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0 WISCONSIN, Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3 Representatives in Latin America ARGENTINA, Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655 CHILE, Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993 COLUMBIA, Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2 MEXICO, Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0 Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7 Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8 PUERTO RICO, Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0 One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400 TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com ©2003 Advanced Micro Devices, Inc. 01/03 Printed in USA