ON BC817-40LT3G General purpose transistors(npn silicon)ã Datasheet

BC817−16LT1,
BC817−25LT1, BC817−40LT1
General Purpose
Transistors
NPN Silicon
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Features
• Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
45
V
Collector −Base Voltage
VCBO
50
V
Emitter −Base Voltage
VEBO
5.0
V
IC
500
mAdc
Collector Current − Continuous
2
EMITTER
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR− 5 Board, (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
RJA
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
PD
xxD
xx
D
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 6
1
Publication Order Number:
BC817−16LT/D
BC817−16LT1, BC817−25LT1, BC817−40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 A)
V(BR)CES
50
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 A)
V(BR)EBO
5.0
−
−
V
−
−
−
−
100
5.0
nA
A
100
160
250
40
−
−
−
−
250
400
600
−
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC817−25
BC817−40
(IC = 500 mA, VCE = 1.0 V)
hFE
BC817−16
−
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
Shipping†
Specific Marking Code
Package
BC817−16LT1
6A
SOT−23
BC817−16LT1G
6A
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC817−16LT3
6A
SOT−23
10,000 / Tape & Reel
BC817−25LT1
6B
SOT−23
BC817−25LT1G
6B
SOT−23
(Pb−Free)
BC817−25LT3
6B
SOT−23
BC817−25LT3G
6B
SOT−23
(Pb−Free)
BC817−40LT1
6C
SOT−23
BC817−40LT1G
6C
SOT−23
(Pb−Free)
BC817−40LT3
6C
SOT−23
BC817−40LT3G
6C
SOT−23
(Pb−Free)
SBC817−40LT1
6C
SOT−23
3,000 / Tape & Reel
SBC817−40LT3
6C
SOT−23
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BC817−16LT1, BC817−25LT1, BC817−40LT1
hFE, DC CURRENT GAIN
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
1.0
1.0
TJ = 25°C
TA = 25°C
0.8
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
100
1
Figure 2. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 3. “On” Voltages
100
+1
VC for VCE(sat)
0
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
VBE(sat) @ IC/IB = 10
−1
VB for VBE
−2
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1
0.1
1000
Figure 4. Temperature Coefficients
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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3
100
BC817−16LT1, BC817−25LT1, BC817−40LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
For additional information, please contact your
local Sales Representative.
BC817−16LT1/D
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