ASB ASF250 5 ~ 1000 mhz mmic amplifier Datasheet

ASF250
5 ~ 1000 MHz MMIC Amplifier
Features
Description
16.9 dB Gain at 150 MHz
The ASF250, a IF gain block amplifier MMIC, has a
high linearity, high gain, and high efficiency over a
wide range of frequency, being suitable for use in
both receiver and transmitter of telecommunication
systems up to 1 GHz. It has an active bias network
for stable current over temperature and process
variation. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
22 dBm P1dB at 150 MHz
43 dBm Output IP3 at 150 MHz
2.5 dB NF at 150 MHz
MTTF > 100 Years
Single Supply
Minimal External Components
ASF250
Package Style: SOT89
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Application Circuit
Parameters
Units
Typical
Frequency
MHz
70
150
300
450
900
150
Gain
dB
17.0
16.9
16.7
16.6
16.1
16.8
S11
dB
-15
-20
-20
-20
-14
-20
 IF (50 ~ 1000 MHz, 4.6 V, 90 mA)
S22
dB
-16
-20
-20
-19
-13
-20
 IF (350 ~ 470 MHz, 5V)
Output IP3
dBm
40.01)
43.01)
43.01)
40.01)
38.01)
41.52)
Noise Figure
dB
2.5
2.5
2.7
2.7
2.7
2.4
Output P1dB
dBm
22
22
22
22
22
21
Current
mA
98
98
98
98
98
90
Device Voltage
V
+5.0
+5.0
+5.0
+5.0
+5.0
+4.6
 IF (50 ~ 1000 MHz, 5 V)
 IF (100 ~ 200 MHz, 5V)
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz
2) OIP3 is measured with two tones at an output power of +7 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Units
Min
Typ
Testing Frequency
MHz
150
Gain
dB
16.9
S11
dB
-20
S22
dB
-20
Output IP3
dBm
43
Noise Figure
dB
2.5
Output P1dB
dBm
22
Current
mA
98
Device Voltage
V
+5
Max
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Pin No.
Function
Device Voltage
+6 V
1
RF IN
+150 C
2
GND
Input RF Power (Continuous)
+20 dBm
3
RF OUT & Bias
Thermal Resistance
42 C/W
Operating Junction Temperature
1)
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
Outline Drawing
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
ASF250
Pxxxx
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.89
1.04
0.36
0.42
0.41
0.47
0.38
0.40
4.40
4.50
1.40
1.60
3.64
--2.40
2.50
2.90
3.00
0.35
0.40
0.65
0.75
1.40
1.50
Pin No.
Function
1
RF IN
2
GND
3
RF OUT & Bias
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
Mounting Recommendation (In mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 500 V ~ 1000 V
MM
Class A
Voltage Level: < 200 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
2/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
70
150
300
450
900
Magnitude S21 (dB)
17.0
16.9
16.7
16.6
16.1
Magnitude S11 (dB)
-15
-20
-20
-20
-14
Magnitude S22 (dB)
-16
-20
-20
-19
-13
Output P1dB (dBm)
22.0
22.0
22.0
22.0
22.0
50 ~ 1000 MHz
Output IP31) (dBm)
40.0
43.0
43.0
40.0
38.0
+5 V
Noise Figure (dB)
2.5
2.5
2.7
2.7
2.7
Device Voltage (V)
+5
+5
+5
+5
+5
Device Current (mA)
98
98
98
98
98
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vs=5 V
C4=1 F
C3=100 pF
L1=560 nH
C1=1 F
RF IN
C2=1 F
RF OUT
ASF250
S-parameters & K-factor
25
0
20
-5
o
o
-40 c
o
25 c
o
85 c
-10
S11 (dB)
Gain (dB)
15
-40 c
o
25 c
o
85 c
10
-15
-20
5
-25
0
0
200
400
600
800
0
1000
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
5
0
o
-40 c
o
25 c
o
85 c
4
Stability Factor
-5
S22 (dB)
-10
-15
-20
3
2
1
-25
0
0
200
400
600
800
1000
0
500
3/8
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
Gain vs. Temperature
120
20
110
18
100
16
Gain (dB)
Current (mA)
Current vs. Temperature
90
14
Frequency = 150 MHz
12
80
70
-60
-40
-20
0
20
40
60
80
10
-60
100
-40
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
P1dB vs. Temperature
Output IP3 vs. Tone Power (Frequency = 150 MHz)
26
50
24
45
Output IP3 (dBm)
P1dB (dBm)
o
22
20
Frequency = 150 MHz
18
16
-60
-40
-20
0
20
40
60
80
-40 c
o
25 c
o
85 c
40
35
30
25
100
6
8
o
10
12
14
16
18
Pout per Tone (dBm)
Temperature ( C)
ACLR (LTE)
-40
ACLR (dBc)
-45
-50
20 MHz BW
-55
-60
10 MHz BW
-65
-70
0
2
4
6
8
10
12
Output Power (dBm)
14
16
Note that ACLR test conditions are as follows;
1) Test Source: LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 140 MHz
2) Test Source: LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 140 MHz
4/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
Frequency (MHz)
70
150
300
450
900
Magnitude S21 (dB)
17.0
16.8
16.7
16.5
16.0
Magnitude S11 (dB)
-15
-20
-20
-20
-14
Magnitude S22 (dB)
-16
-20
-20
-20
-13
IF
Output P1dB (dBm)
21
21
21
21
21
50 ~ 1000 MHz
Output IP31) (dBm)
39.0
41.5
42.0
39.0
36.5
Noise Figure (dB)
2.4
2.4
2.6
2.6
2.6
Device Voltage (V)
+4.6
+4.6
+4.6
+4.6
+4.6
Device Current (mA)
90
90
90
90
90
APPLICATION CIRCUIT
+4.6 V, 90 mA
1) OIP3 is measured with two tones at an output power of +7 dBm/tone separated by 1 MHz.
Vs=5 V
Schematic
Board Layout (FR4, 40x40 mm2, 0.8T)
R1=4.7 
C4=1 F
C3=100 pF
L1=560 nH
C1=1 F
RF IN
C2=1 F
RF OUT
ASF250
S-parameters & K-factor
0
25
-5
20
S11 (dB)
Gain (dB)
-10
15
10
-15
-20
5
0
-25
-30
0
200
400
600
800
0
1000
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
5
0
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
3
2
1
-25
-30
0
0
200
400
600
800
1000
0
500
Frequency (MHz)
5/8
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
350
470
Magnitude S21 (dB)
17
17
Magnitude S11 (dB)
-18
-18
Magnitude S22 (dB)
-18
-20
Output P1dB (dBm)
23
23
350 ~ 470 MHz
Output IP31) (dBm)
43.0
42.5
+5 V
Noise Figure (dB)
2.7
2.7
Device Voltage (V)
5
5
Device Current (mA)
125
125
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by
1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vdevice=+5 V
C4=1 F
C3=100 pF
R1=6.2 k
L1=180 nH
C2= 1 F
C1= 1 F
RF IN
RF OUT
ASF250
S-parameters & K-factor
0
20
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
5
-20
0
-25
0
200
400
600
800
0
1000
200
400
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
800
1000
3
2
1
-25
0
0
200
400
600
800
1000
0
500
Frequency (MHz)
6/8
600
Frequency (MHz)
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
100
200
Magnitude S21 (dB)
17.1
17.0
Magnitude S11 (dB)
-19
-20
Magnitude S22 (dB)
-20
-20
Output P1dB (dBm)
23
23
100 ~ 200 MHz
Output IP31) (dBm)
44.5
45.5
+5 V
Noise Figure (dB)
2.6
2.6
Device Voltage (V)
5
5
Device Current (mA)
125
125
1) OIP3 is measured with two tones at an output power of +9 dBm/tone separated by
1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vdevice=+5 V
C4=1 F
C3=100 pF
R1=6.2 k
L1=470 nH
C2= 1 F
C1= 1 F
RF IN
RF OUT
ASF250
S-parameters & K-factor
0
20
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
5
-20
0
-25
0
50
100
150
200
250
300
0
50
100
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
200
250
300
3
2
1
-25
0
50
100
150
200
250
300
0
0
500
Frequency (MHz)
7/8
150
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASF250
5 ~ 1000 MHz MMIC Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2012-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in
any form or by any means without the prior written consent of ASB.
8/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
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