CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN8N65FI Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 1/9 BVDSS : 650V RDS(ON) :1.2Ω(typ.) ID : 7.5A Description The MTN8N65FI is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Symbol Outline MTN8N65FI G：Gate D：Drain S：Source MTN8N65FI TO-262 G D S CYStek Product Specification Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 650 ±30 7.5* 4.5* 30* 213 7.5 16.5 4.5 V V A A A mJ A mJ V/ns TL 300 °C Tj, Tstg 165 1.32 -55~+150 W W/°C °C *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=7.5A, VDD=50V, L=7mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN8N65FI Symbol Rth,j-c Rth,j-a Value 0.76 62.5 Unit °C/W °C/W CYStek Product Specification Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 3/9 CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 650 2.0 - 0.7 5 1.2 4.0 ±100 1 10 1.35 V V/°C V S nA Ω VGS=0, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =40V, ID=3.75A VGS=±30 VDS =650V, VGS =0 VDS =520V, VGS =0, Tj=125°C VGS =10V, ID=3.75A 32 7.2 14 40 70 90 75 1726 180 49 - nC ID=7.5A, VDD=520V, VGS=10V ns VDD=325V, ID=7.5A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 400 3.5 1.4 7.5 30 - V IS=7.5A, VGS=0V Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA A ns μC VGS=0, IF=7.5A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN8N65FI MTN8N65FI Package TO-262 (RoHS compliant package) Shipping 50 pcs/tube, 40 tubes/box CYStek Product Specification Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 3 15V 10V 9V 7V 6V 15 Static Drain-Source On-state Resistance-RDS(on) (Ω) Drain Current - I D(A) 20 5.5V 10 5V 5 VGS=4.5V 10 20 30 40 50 Drain-Source Voltage -VDS(V) 2 1.5 1 ID=3.75A, VGS=10V 0.5 0 0 2.5 0 -100 60 -50 0 50 100 Ambient Temperature-Ta(°C) Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 20 2 VDS=30V VGS=10V Drain Current-I D(on)(A) Static Drain-Source On-State Resistance-R DS(on)(Ω) Ta=25°C 1.5 1 15 VDS=10V 10 5 0 0.5 0.1 1 10 Drain Current-I D(A) 0 100 100 3 Reverse Drain Current-I DR (A) Ta=25°C ID=3.75A 2.5 2 1.5 1 0.5 5 10 Gate-Source Voltage-VGS(V) 15 Body Diode Forward Voltage Variation vs Source Current and Temperature Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance-R DS(ON)(Ω) 150 VGS=0V 10 Ta=150°C 1 Ta=25°C 0.1 0 2 MTN8N65FI 4 6 8 10 Gate-Source Voltage-VGS (V) 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 800 Drain-Source Breakdown Voltage BVDSS(V) f=1MHz Capacitance-(pF) Ciss 1000 Coss 100 Crss 10 0 5 10 15 20 25 Drain-to-Source Voltage-VDS (V) 750 700 ID=250μA, VGS=0V 650 -100 30 -50 0 100 150 200 Gate Charge Characteristics Maximum Safe Operating Area 12 100 100μs 10 1ms 10ms 1 100ms Operation in this area is limited by RDS(ON) 0.1 DC Single pulse Tc=25°C; Tj=150°C VDS=130 10 VDS=325V 8 VDS=520V 6 4 ID=7.5A 2 0 0.01 1 Gate-Source Voltage---VGS(V) 10μ Drain Current --- ID(A) 50 Ambient Temperature-Tj(°C) 10 100 Drain-Source Voltage -VDS(V) 1000 0 5 10 15 20 25 30 35 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature 9 7 6 (A) Maximum Drain Current---I D 8 5 4 3 2 1 0 25 50 75 100 125 150 175 Case Temperature---TC (°C) MTN8N65FI CYStek Product Specification CYStech Electronics Corp. Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Transient Thermal Response Curves 1 D=0.5 ZθJC(t), Thermal Response 0.2 0.1 1.ZθJC(t)=0.76°C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN8N65FI CYStek Product Specification CYStech Electronics Corp. Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 7/9 Test Circuits and Waveforms MTN8N65FI CYStek Product Specification CYStech Electronics Corp. Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 8/9 Test Circuits and Waveforms(Cont.) MTN8N65FI CYStek Product Specification CYStech Electronics Corp. Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 9/9 TO-262 Dimension Marking: Device Name Date Code 8N65 □□□□ 1 3-Lead TO-262 Plastic Package CYStek Package Code: FI 2 3 Style: Pin 1.Gate 2.Drain 3.Source *Typical Millimeters Min. Max. 4.40 4.80 0.76 1.00 8.60 9.00 0.36 0.50 9.80 10.40 DIM A b D c E Inches Min. Max. 0.1732 0.1890 0.0299 0.0394 0.3386 0.3543 0.0142 0.0197 0.3858 0.4094 DIM c2 b2 L e L2 Millimeters Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF 1.27 REF Inches Min. Max. 0.0492 0.0571 0.0461 0.0579 0.5217 0.5610 0.1000 REF 0.0500 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN8N65FI CYStek Product Specification