PHILIPS BYG80 Ultra fast low-loss controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1997 Nov 25
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• Guaranteed avalanche energy
absorption capability
k
a
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
UNIT
BYG80A
−
50
V
BYG80B
−
100
V
BYG80C
−
150
V
BYG80D
−
200
V
BYG80F
−
300
V
BYG80G
−
400
V
BYG80J
−
600
V
−
50
V
continuous reverse voltage
BYG80B
−
100
V
BYG80C
−
150
V
BYG80D
−
200
V
BYG80F
−
300
V
BYG80G
−
400
V
BYG80J
−
600
V
−
2.4
A
−
2.3
A
−
2.0
A
−
1.25
A
−
1.15
A
−
0.95
A
average forward current
BYG80A to D
BYG80F; BYG80G
Ttp = 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80J
IF(AV)
MAX.
repetitive peak reverse voltage
BYG80A
IF(AV)
MIN.
average forward current
BYG80A to D
BYG80F; BYG80G
Tamb = 60 °C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80J
1997 Nov 25
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
IF(AV)
BYG80 series
PARAMETER
CONDITIONS
MIN.
Tamb = 60 °C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
average forward current
−
0.95
A
0.85
A
−
0.65
A
BYG80A to D
−
21
A
BYG80F; BYG80G
−
21
A
BYG80J
−
18
A
−
11
A
−
11
A
−
9
A
−
8
A
BYG80F; BYG80G
−
8
A
BYG80J
−
6
A
BYG80J
IFRM
repetitive peak forward current
repetitive peak forward current
BYG80A to D
Ttp = 100 °C; see Figs 8, 9 and 10
Tamb = 60 °C; AL2O3 PCB mounting;
see Figs 11, 12 and 13
BYG80F; BYG80G
BYG80J
IFRM
repetitive peak forward current
BYG80A to D
IFSM
UNIT
−
BYG80A to D
BYG80F; BYG80G
IFRM
MAX.
Tamb = 60 °C; epoxy PCB mounting;
see Figs 14, 15 and 16
non-repetitive peak forward current t = 8.3 ms half sine wave; Tj = 25 °C
prior to surge; VR = VRRMmax
BYG80A to D
−
36
A
−
32
A
−
10
mJ
−65
+175
°C
−65
+175
°C
MIN.
TYP.
MAX.
BYG80F; BYG80G; BYG80J
ERSM
non-repetitive peak reverse
avalanche energy
Tstg
storage temperature
Tj
junction temperature
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
see Fig.20
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
−
−
0.67
V
−
−
0.73
V
BYG80J
−
−
0.96
V
BYG80A to D
−
−
0.93
V
BYG80F; BYG80G
−
−
0.98
V
BYG80J
−
−
1.20
V
forward voltage
1997 Nov 25
IF = 1 A; Tj = Tj max;
see Figs 21, 22 and 23
UNIT
BYG80F; BYG80G
BYG80A to D
VF
CONDITIONS
IF = 1 A; see Figs 21, 22 and 23
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
V(BR)R
PARAMETER
reverse avalanche
breakdown voltage
BYG80 series
CONDITIONS
MIN.
BYG80A
55
−
−
V
110
−
−
V
BYG80C
165
−
−
V
BYG80D
220
−
−
V
BYG80F
330
−
−
V
BYG80G
440
−
−
V
BYG80J
675
−
−
V
−
−
−
−
100
µA
−
−
150
µA
−
−
25
ns
−
−
50
ns
BYG80A to D
−
90
−
pF
BYG80F; BYG80G
−
70
−
pF
BYG80J
−
65
−
pF
−
−
3
A/µs
−
−
4
A/µs
VR = VRRMmax;
see Figs 24 and 25
IR
reverse current
VR = VRRMmax; Tj = 165 °C;
see Figs 24 and 25
BYG80A to D
BYG80F; BYG80G and J
reverse recovery time
BYG80A to D
BYG80F; BYG80G and J
dI R
-------dt
UNIT
BYG80B
reverse current
Cd
MAX.
IR = 0.1 mA
IR
trr
TYP.
diode capacitance
maximum slope of reverse
recovery current
BYG80A to D
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.29
µA
10
f = 1 MHz; VR = 0; see Fig.26
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.28
BYG80F; BYG80G and J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
VALUE
25
UNIT
K/W
note 1
100
K/W
note 2
150
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the “General Part of associated Handbook”.
1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
GRAPHICAL DATA
MGL081
4
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
3
3
2
2
1
1
0
0
0
100
Ttp (oC)
200
0
BYG80A to D
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42.
Fig.2
MBK454
4
handbook, halfpage
40
80
120
160
200
Ttp (°C)
BYG80F and G
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGL094
4.0
MGL079
2
handbook, halfpage
handbook, halfpage
IFAV
(A)
IF(AV)
3.0
1.5
2.0
1
(A)
(1)
(2)
1.0
0.5
0
0
40
80
120
0
200
160
Ttp (οC)
0
100
Tamb (οC)
200
Switched mode application.
VR = VRRMmax; δ = 0.5; a = 1.42.
BYG80A to D
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.4
Fig.5
BYG80J
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1997 Nov 25
5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL080
2
MGL092
1.6
handbook, halfpage
handbook, halfpage
IF(AV)
(A)
IF(AV)
(A)
1.5
1.2
(1)
(1)
1
0.8
(2)
(2)
0.5
0.4
0
0
100
0
200
Tamb (οC)
0
BYG80F and G
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.6
40
80
120
160
200
Tamb (oC)
BYG80J
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.7
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGL086
30
handbook, full pagewidth
IFRM
(A)
δ = 0.05
20
0.1
10
0.2
0.5
1
0
10−2
10−1
1
10
102
103
tP (ms)
104
BYG80A to D
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL087
30
handbook, full pagewidth
IFRM
(A)
δ = 0.05
20
0.1
10
0.2
0.5
1
0
10−2
10−1
1
10
102
103
tP (ms)
104
BYGF and G
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL096
20
handbook, full pagewidth
IFRM
(A)
δ = 0.05
16
12
8
4
0.1
0.2
0.5
1
0
10−2
10−1
1
10
102
103
tP (ms)
104
BYG80J
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL082
20
handbook, full pagewidth
IFRM
(A)
16
12
8
δ = 0.05
0.1
0.2
4
0.5
1
0
10−2
10−1
1
10
102
tp (ms)
103
BYG80A to D
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL083
20
handbook, full pagewidth
IFRM
(A)
16
12
8
δ = 0.05
0.1
0.2
4
0.5
1
0
10−2
10−1
1
10
102
tp (ms)
103
BYG80F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL093
10
handbook, full pagewidth
IFRM
(A)
δ = 0.05
8
6
0.1
4
0.2
2
0.5
1
0
10−2
10−1
1
102
10
103
tP (ms)
104
BYG80J
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL084
10
handbook, full pagewidth
IFRM
δ = 0.05
(A)
8
6
0.1
4
0.2
0.5
2
1
0
10−2
10−1
1
10
102
tp (ms)
103
BYG80A to D
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL085
10
handbook, full pagewidth
IFRM
(A)
δ = 0.05
8
6
0.1
4
0.2
0.5
2
1
0
10−2
10−1
1
102
10
103
tp (ms)
BYG80F and G
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL097
8
handbook, full pagewidth
IFRM
(A)
δ = 0.05
6
0.1
4
0.2
2
0.5
1
0
10−2
10−1
10
102
103
tP (ms)
104
BYG80J
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL088
8
MGL089
8
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
a = 3 2.5
6
2 1.57 1.42
a = 3 2.5
6
4
4
2
2
2 1.57 1.42
0
0
0
2
0
4
IF(AV) (A)
BYG80A to D
a = IF(RMS)/IF(AV); VRRMmax.
2
4
IF(AV) (A)
BYG80F and G
a = IF(RMS)/IF(AV); VRRMmax.
Fig.17 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.18 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MGL099
8
MBK455
200
handbook, halfpage
handbook, halfpage
P
(W)
a = 3 2.5
6
2
Tj
(°C)
1.57 1.42
100
4
2
0
0
0
2
IF(AV) (A)
4
0
BYG80J
a = IF(RMS)/IF(AV); VRRMmax.
VR (%VRmax)
100
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.19 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1997 Nov 25
50
Fig.20 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL090
10
IF
MGL091
10
handbook, halfpage
handbook, halfpage
IF
(A)
(A)
8
8
(1)
(2)
6
6
4
4
(1)
2
(2)
2
0
0
1
2
VF (V)
0
3
0
BYG80A to D
(1) Tj = 175 °C.
(2) Tj = 25 °C.
0.4
0.8
1.2
1.6
VF (V)
2.0
BYG80F and G
(1) Tj = 175 °C.
(2) Tj = 25 °C.
Fig.21 Forward current as a function of forward
voltage; maximum values.
Fig.22 Forward current as a function of forward
voltage; maximum values.
MGL098
10
IF
(A)
MGL095
103
handbook, halfpage
handbook, halfpage
IR
(µA)
8
102
6
4
(1)
(2)
10
2
0
0
1
2
VF (V)
1
3
0
BYG80J
(1) Tj = 175 °C.
(2) Tj = 25 °C.
Tj (°C)
200
BYG80A to D
VR = VRMMmax.
Fig.23 Forward current as a function of forward
voltage; maximum values.
1997 Nov 25
100
Fig.24 Reverse current as a function of junction
temperature; maximum values.
12
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGC549
103
handbook, halfpage
MGL078
102
handbook, halfpage
IR
(µA)
Cd
(pF)
102
(1)
10
(2)
(3)
10
1
1
0
100
200
Tj (°C)
1
102
10
VR (V)
103
f = 1 MHz; Tj = 25 °C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
BYG80F to J
VR = VRMMmax.
Fig.25 Reverse current as a function of junction
temperature; maximum values.
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
50
IF halfpage
handbook,
dI F
dt
4.5
t rr
50
10% t
dI R
2.5
dt
100%
IR
1.25
MGC499
MSB213
Dimensions in mm.
Fig.27 Printed-circuit board for surface mounting.
1997 Nov 25
Fig.28 Reverse recovery definitions.
13
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
BYG80 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.29 Test circuit and reverse recovery time waveform and definition.
1997 Nov 25
14
MAM057
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
E
H
Q
mm
2.3
2.0
0.05
1.6
1.4
0.2
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
SOD106
1997 Nov 25
REFERENCES
IEC
JEDEC
EIAJ
DO-214AC
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
15
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 25
16
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
17
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
18
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
19
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/1200/02/pp20
Date of release: 1997 Nov 25
Document order number:
9397 750 02662