AWM6433 3.4 - 3.6 GHz WiMAX Power Amplifier Module preliminary data sheet - rev 1.0 FEATURES • InGaP HBT Technology • 30 dB Gain • < 3 % EVM at +22 dBm (+3.3 V Supply) • 4 % EVM at +23 dBm (+3.3 V Supply) • < 3 % EVM at +23 dBm (+4.2 V Supply) • 4 % EVM at +24 dBm (+4.2 V Supply) • High Efficiency • Integrated 25 dB Attenuator • Integrated Output Power Detector • 50 Matched RF Ports for Reduced External Component Count • 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module, Materials Set Consistent with RoHS Directives M35 Package 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module APPLICATIONS • WiMAX Tranceivers That Support the IEEE 802.16d-2004, IEEE 802.16e-2005, and the ETSI EN301-021 Wireless standards PRODUCT DESCRIPTION The ANADIGICS AWM6433 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed for portable or mobile applications in the 3.4-3.6 GHz band, it supports the IEEE 802.16e-2005 wireless standard, as well as the IEEE 802.16d-2004 and ETSI EN301-021 standards. The device requires only a nominal +3.3 V supply and a low-current bias input. An increase in supply voltage produces an increase in the maximum linear output power. The integrated detector can be used to monitor output power, and the integrated 25 dB step attenuator enables gain control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6433 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness. It is offered in a 4.5 mm x 4.5 mm x 1.0 mm surface mount module optimized for use in a 50 system. Supply Voltage RF Input Supply Voltage Step Attenuator Matching Network Bias Control Attenuator Control Bias Voltage RF Output Power Detector Detector Ouput Ground Figure 1: Functional Block Diagram 12/2008 AWM6433 VCC 1 12 VCC rFin 2 11 Gnd Gnd 3 10 rFOUt VBiAs 4 9 Gnd VCC 5 8 Gnd VAttn 6 7 det Gnd Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 pin nAMe desCriptiOn 1 VCC Supply Voltage 2 RFIN RF Input 3 GND Ground 4 VBIAS Bias/Shutdown 5 VCC Supply Voltage 6 VATTN Attenuator Control 7 DET Detector Output 8 GND Ground 9 GND Ground 10 RFOUT RF Output 11 GND Ground 12 VCC Supply Voltage PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings pArAMeter Min MAX Unit Supply Voltage (VCC) 0 +5.0 V Bias Voltage (VBIAS) 0 +3.0 V Attenuator Control Voltage (VATTN) 0 +3.7 V RF Input Power - 0 dBm ESD Rating Human Body Model Charged Device Model TBD TBD - V MSL Level TBD - - Storage Temperature -40 +150 °C COMMents OFDM modulated signal Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges pArAMeter Min typ MAX Unit Operating Frequency (f) 3400 - 3600 MHz Supply Voltage (VCC) +2.9 +3.3 +4.2 V Bias Voltage (VBIAS) +2.80 0 +2.85 - +2.90 +0.7 V PA"on" PA"shut down" +2.3 0 - +3.7 +0.7 V Attenuator enabled Nominal gain RF Output Power (POUT) - +23 - dBm Case Temperature (TC) -40 - +85 °C Attenuator Control Voltage (VATTN) Logic High Logic Low COMMents The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. PRELIMINARY DATA SHEET - Rev 1.0 12/2008 3 AWM6433 Table 4: Electrical Specifications (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 3.6 GHz, 50 Ω system) pArAMeter Min typ MAX Unit Gain - 31 - dB Attenuator Step - 25 - dB Output Power Meets Spectrum Mask - +24 - dBm EVM - 2.8 4 3.2 - % Output P1dB - +29 - dBm CW Output IP3 - +40 - dBm two CW tones, +19 dBm output per tone Harmonics - -30 - dBc at +24 dBm POUT Power-Added Efficiency - 23 - % at +24 dBm POUT Power Detector Voltage at +24 dBm POUT at +14 dBm POUT - +2.15 +0.85 - V High impedance load Quiescent Current - 135 - mA Current Consumption VCC VCC VBIAS VATTN - 280 325 6.5 0.2 8.0 1.0 Leakage Current (2) - 1.7 3.0 mA mA COMMents ETSI EN301-021 Type G at +22 dBm POUT at +23 dBm POUT at +22 dBm POUT at +24 dBm POUT Logic High = +3.3 V PA shut down (VBIAS = 0V) See figure 7 Application Circuit. Notes: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. (2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS application note titled, “AWM6423 Reduced leakage current in Off State.” 4 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 PERFORMANCE DATA Figure 3: Gain vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) Figure 4: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) 7.0 35 34 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 6.0 33 5.0 31 eVM (%) Gain (dB) 32 30 29 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 28 27 4.0 3.0 2.0 1.0 26 0.0 25 13 14 15 16 17 18 19 20 21 22 23 24 13 25 14 15 16 17 Figure 5: Supply Current vs. Output Power (TC = +25 °C, VCC = +3.3V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz icc (mA) 300 20 21 22 23 24 25 2.50 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 2.25 350 19 Figure 6: Detector Voltage vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) 2.00 detector Voltage (V) 400 18 Output power (dBm) Output power (dBm) 250 200 1.75 1.50 1.25 1.00 150 0.75 100 13 14 15 16 17 18 19 20 Output power (dBm) 21 22 23 24 25 0.50 13 14 15 16 17 18 19 20 21 22 23 24 25 Output power (dBm) PRELIMINARY DATA SHEET - Rev 1.0 12/2008 5 AWM6433 APPLICATION INFORMATION Transmit Disable and Attenuator Control The power amplifier is disabled by setting VBIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN. VCC VCC 2.2 F RF IN VBIAS 100 pF VCC 0.1 F VATTN VCC VCC 12 2 RFIN GND 11 3 GND RFOUT 10 4 VBIAS GND 9 5 VCC GND 8 6 VATTN DET 7 GND at slug 2.2 F RF OUT DETOUT 4.7 K Figure 7: Application Circuit 6 1 F 0.01 F 1 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 0.1 F AWM6433 Figure 8: Land Pattern PRELIMINARY DATA SHEET - Rev 1.0 12/2008 7 AWM6433 PACKAGE OUTLINE Figure 9: M35 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module 8 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 ORDERING INFORMATION Order nUMBer teMperAtUre rAnGe pACKAGe desCriptiOn COMpOnent pACKAGinG AWM6433RM35P8 -40 °C to +85 °C 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module 2,500 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 9 PRELIMINARY DATA SHEET - Rev 1.0 12/2008