MOTOROLA MRF1507 Lateral nchannel broadband rf power mosfet Datasheet

Order this document
by MRF1507/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
• Characterized with Series Equivalent Large–Signal
D
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
G
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
8 W, 520 MHz, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage (1)
Symbol
Value
Unit
VDSS
25
Vdc
VGS
± 20
Vdc
Drain Current — Continuous
ID
4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
62.5
0.50
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Tj
150
°C
Symbol
Max
Unit
RθJC
2
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 1998
MRF1507 MRF1507T1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2.5
3.4
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.3
0.44
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
1.30
1.80
—
S
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
48
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
40.5
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
5.2
—
pF
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
η
50
65
—
%
Pout
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Pout
8
9.9
—
W
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
MRF1507 MRF1507T1
2
MOTOROLA RF DEVICE DATA
B1
R2
VGG
C1
+
C2
+
R1
C3
R3
C6
VDD
C4
C5
L1
Z7
N1
RF
INPUT
Z1
Z2
Z3
Z4
R4
Z5
Z6
Z8
C8
B1
C1, C5
C2, C4
C3, C6, C8, C14
C7, C9, C13
C10
C11
C12
L1
N1, N2
R1
R2
R3
Z10
DUT
N2
Z11
RF
OUTPUT
C14
C12
C7
Z9
C13
C10
C9
C11
20 Ω, 1/4 W Carbon
0.459″ x 0.083″ Microstrip
0.135″ x 0.083″ Microstrip
1.104″ x 0.083″ Microstrip
0.114″ x 0.083″ Microstrip
0.154″ x 0.083″ Microstrip
0.259″ x 0.213″ Microstrip
0.217″ x 0.213″ Microstrip
0.175″ x 0.083″ Microstrip
0.747″ x 0.083″ Microstrip
0.608″ x 0.083″ Microstrip
0.594″ x 0.083″ Microstrip
Glass Teflon, 31 mils
R4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
Fair Rite Products Long Ferrite Bead
0.1 µF, 100 mil Chip Capacitor
10 µF, 50 V Electrolytic Capacitor
130 pF, 100 mil Chip Capacitor
0.3–20 pF Trimmer Capacitor
82 pF, 100 mil Chip Capacitor
39 pF, 100 mil Chip Capacitor
32 pF, 100 mil Chip Capacitor
4 Turns, #20 AWG Enamel, 0.1″ ID
Type N Connectors
1.1 MΩ, 1/4 W Carbon
2 kΩ, 1/2 W Carbon
100 Ω, 1/4 W Carbon
Figure 1. 500 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
11
12
11
440 MHz
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
10
9
8
470 MHz
7
6
400 MHz
5
4
3
VDD = 7.5 V
IDQ = 200 mA
2
1
0.10
0.30
0.71
1.10
0.50
0.90
Pin, INPUT POWER (WATTS)
1.31
Figure 2. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
IDQ = 200 mA
700 mW
10
9
500 mW
8
7
6
Pin = 300 mW
5
1.51
4
6
7
8
VDD, SUPPLY VOLTAGE (V)
9
10
Figure 3. Output Power versus
Supply Voltage @ 400 MHz
MRF1507 MRF1507T1
3
TYPICAL CHARACTERISTICS
13
13
12
IDQ = 200 mA
11
Pout , OUTPUT POWER (WATTS)
700 mW
10
500 mW
9
8
7
Pin = 300 mW
6
5
IDQ = 200 mA
700 mW
11
10
500 mW
9
8
7
Pin = 300 mW
6
5
6
7
8
VDD, SUPPLY VOLTAGE (V)
9
4
10
6
7
Figure 4. Output Power versus
Supply Voltage @ 470 MHz
8.5
80
16
8
GAIN (dB), Pout (WATTS)
Pout , OUTPUT POWER (WATTS)
10
20
f = 470 MHz
f = 440 MHz
70
DRAIN EFFICIENCY
12
7.5
f = 400 MHz
7
60
GAIN
8
50
Pout
f = 520 MHz
IDQ = 150 mA
Pin = 0.7 W
4
6.5
VCC = 7.5 V
Pin = 0.6 W
0
0
50
100
150 200 250 300 350
IDQ, GATE CURRENT (mA)
400
450
4
500
6
7
8
VDD, DRAIN VOLTAGE (V)
5
Figure 6. Output Power versus Gate Current
9
40
30
10
Figure 7. Gain, Pout, Efficiency
versus Drain Voltage
12
15
70
GAIN
GAIN
GAIN (dB), Pout (WATTS)
Gp (dB),Pout , OUTPUT POWER (WATTS)
9
Figure 5. Output Power versus
Supply Voltage @ 440 MHz
9
6
8
VDD, SUPPLY VOLTAGE (V)
60
10
Pout
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IDQ (A)
Figure 8. Pout versus IDQ
MRF1507 MRF1507T1
4
0.8
0.9
50
DRAIN EFFICIENCY
40
PPout
out
5
f = 520 MHz
VDD = 7.5 V
IDQ = 150 mA
f = 520 MHz
VDD = 7.5 V
Pin = 0.7 W
8
DRAIN EFFICIENCY (%)
4
1.0
0
15
17
DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
12
30
19
21
23
25
27
20
29
INPUT POWER (dBm)
Figure 9. Pout, Gain, Drain Efficiency versus Pin
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
12
f = 500 MHz
VDD = 7.5 V
10
700 mW
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
12
500 mW
8
6
Pin = 250 mW
4
2
0
4
5
7
8
VDS, DRAIN VOLTAGE (V)
9
6
10
700 mW
10
500 mW
8
6
Pin = 250 mW
4
2
f = 500 MHz
VDD = 7.5 V
0
0
100
Figure 10. Pout versus Drain Voltage
f = 520 MHz
VDD = 7.5 V
10
700 mW
500 mW
8
6
Pin = 250 mW
4
2
900 1000
700 mW
500 mW
8
6
Pin = 250 mW
4
f = 520 MHz
VDD = 7.5 V
2
0
4
5
6
7
8
VDS, DRAIN VOLTAGE (V)
9
10
0
100
200
300
400 500 600
IDQ, (mA)
700
800
900 1000
Figure 13. Pout versus IDQ
12
17
VDD = 9 V
11
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
800
10
Figure 12. Pout versus Drain Voltage
10
9
VDD = 7.5 V
8
7
f = 135 MHz
IDQ = 800 mA
6
5
700
12
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
400 500 600
IDQ, (mA)
Figure 11. Pout versus IDQ
12
0
300
200
20
21
22
23
Pin, (dBm)
Figure 14. Pout versus Pin
MOTOROLA RF DEVICE DATA
24
25
VDD = 9 V
15
13
VDD = 7.5 V
11
9
f = 155 MHz
IDQ = 800 mA
7
5
20
21
22
23
24
25
Pin, (dBm)
Figure 15. Pout versus Pin
MRF1507 MRF1507T1
5
TYPICAL CHARACTERISTICS
4
15
VDS = 10 V
VDD = 9 V
ID , DRAIN CURRENT (AMPS)
Pout , OUTPUT POWER (WATTS)
17
13
VDD = 7.5 V
11
9
f = 175 MHz
IDQ = 800 mA
7
5
20
21
22
23
24
3
2
1
0
25
TYPICAL DEVICE SHOWN
0
Pin, (dBm)
Figure 16. Pout versus Pin
5
6
5
ID , DRAIN CURRENT (AMPS)
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
3
2
4
VGS, GATE–SOURCE VOLTAGE (V)
Figure 17. Drain Current versus Gate Voltage
(Typical Device Shown)
80
60
Ciss
40
Coss
20
0
1
Crss
0
5
10
15
VDS, DRAIN–SOURCE VOLTAGE (V)
Figure 18. Capacitance versus Voltage
MRF1507 MRF1507T1
6
20
4
3
TC = 25°C
2
1
0
0
10
VDS, DRAIN–SOURCE VOLTAGE (V)
100
Figure 19. Maximum Rated Forward Biased
Safe Operating Area
MOTOROLA RF DEVICE DATA
520
f = 400 MHz
175
ZOL*
ZOL*
f = 135 MHz
Zo = 10 Ω
f = 400 MHz
Zin
520
Zin
f = 135 MHz
175
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
f
MHz
Zin
Zin
Ω
VDD = 7.5 V, IDQ = 800 mA, Pout = 8 W
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
400
3.6 – j3.1
2.5 – j0.5
135
6.2 – j15.1
2.3 – j1.8
440
4.0 – j3.7
2.7 – j0.6
155
8.29 – j16.9
2.5 – j0.8
470
3.1 – j4.4
2.5 – j1.2
175
5.33 – j17.0
2.6 – j0.6
500
2.0 – j2.71
2.05 – j0.65
520
1.9 – j3.5
2.1 – j0.4
= Conjugate of source impedance with parallel
20 Ω resistor and 82 pF capacitor in series
with gate.
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency, and ηD > 50 %.
Zin
= Conjugate of source impedance with parallel
10 Ω resistor and 1000 pF capacitor in series
with gate.
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1
7
Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc)
ID = 150 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.76
–138
15.18
100
0.04
12
0.71
–141
100
0.77
–155
7.68
84
0.04
–3
0.72
–156
200
0.81
–162
3.53
65
0.03
–18
0.78
–162
300
0.85
–165
2.08
53
0.03
–27
0.83
–164
400
0.89
–167
1.37
44
0.03
–33
0.87
–166
500
0.91
–169
0.96
37
0.02
–36
0.90
–168
700
0.95
–171
0.54
27
0.01
–35
0.94
–170
850
0.96
–173
0.38
22
0.01
–30
0.95
–172
1000
0.97
–174
0.29
19
0.01
–19
0.96
–173
1200
0.98
–175
0.20
16
0.01
3
0.97
–174
∠φ
9
|S22|
0.79
–161
ID = 800 mA
f
MHz
S11
S21
S22
∠φ
–152
98
|S12|
0.03
0.81
–165
8.37
88
0.03
1
0.80
–169
0.82
–170
4.08
76
0.02
–8
0.81
–172
300
0.84
–172
2.60
68
0.02
–13
0.83
–173
400
0.85
–172
1.84
61
0.02
–17
0.84
–173
500
0.87
–172
1.38
54
0.02
–20
0.86
–173
700
0.90
–173
0.86
44
0.02
–21
0.89
–174
850
0.91
–174
0.64
38
0.01
–19
0.90
–174
1000
0.92
–175
0.49
33
0.01
–12
0.92
–175
1200
0.94
–176
0.36
29
0.01
2
0.93
–176
∠φ
–164
50
100
200
∠φ
S12
|S21|
16.58
|S11|
0.82
∠φ
ID = 1.5 A
f
MHz
S11
S21
S22
∠φ
–156
97
|S12|
0.02
9
|S22|
0.80
–167
8.29
88
0.02
1
0.81
–171
0.83
–172
4.06
77
0.02
–6
0.82
–174
300
0.84
–173
2.61
70
0.02
–10
0.83
–174
400
0.86
–173
1.86
63
0.02
–13
0.85
–174
500
0.87
–174
1.41
57
0.02
–15
0.86
–174
700
0.89
–174
0.89
47
0.01
–16
0.88
–175
850
0.91
–175
0.67
41
0.01
–13
0.90
–175
1000
0.92
–175
0.52
36
0.01
–6
0.91
–175
1200
0.93
–176
0.38
31
0.01
8
0.92
–176
50
100
0.83
200
MRF1507 MRF1507T1
8
∠φ
S12
|S21|
16.45
|S11|
0.83
∠φ
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
The MRF1507 is a common–source, RF power, N–Channel
enhancement mode, Lateral Metal–Oxide Semiconductor
Field–Effect Transistor (MOSFET). Motorola Application Note
AN211A, “FETs in Theory and Practice”, is suggested reading
for those not familiar with the construction and characteristics
of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure
proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs
include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely
mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from
drain–to–source (Cds). These capacitances are characterized
as input (Ciss), output (Coss) and reverse transfer (Crss)
capacitances on data sheets. The relationships between the
inter–terminal capacitances and those given on data sheets
are shown below. The Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and
zero volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF
applications.
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs in
MOTOROLA RF DEVICE DATA
the linear region of the output characteristic and is specified
at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally
required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the
device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
DC input resistance is very high – on the order of 109 Ω —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended. Using
a resistor to keep the gate–to–source impedance low also
helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to the
gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change on
the drain are both high, then the signal coupled to the gate may
be large enough to exceed the gate–threshold voltage and
turn the device on.
MRF1507 MRF1507T1
9
DC BIAS
Since the MRF1507 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent. The
MRF1507 was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may have
to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF1507 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is very
dependent on frequency and load line.
MOUNTING
The specified maximum thermal resistance of 2°C/W
assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an
appropriate heat sink. As with all RF power devices, the goal
MRF1507 MRF1507T1
10
of the thermal design should be to minimize the temperature
at the back side of the package.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF1507. For examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Large–
signal impedances are provided, and will yield a good first
pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF1507 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in
series with the gate, and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Tw o–port stabi l i ty anal y s is w i th the M RF1507
S–parameters provides a useful tool for selection of loading or
feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters” for a discussion of two port network
theory and stability.
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
L
R
C
2
A F
Z O N E
4
3
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉ
10_DRAFT
P
N K
U
X
G
Q
ZONE V
H
1
D
B
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
J
E
0.89 (0.035) X 45 _
Z O N E
"5 _
RESIN BLEED/FLASH ALLOWABLE
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
DIM
A
B
C
D
E
W
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
CASE 466–02
ISSUE B
(PLD 1.5)
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: [email protected] – TOUCHTONE 1–602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
MRF1507 MRF1507T1
12
◊
MOTOROLA RF DEVICEMRF1507/D
DATA