APTM10AM02F VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Phase leg MOSFET Power Module Q1 G1 OUT S1 Q2 G2 S2 G1 VBUS 0/VBUS 0/VBUS OUT E1 E2 G2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10AM02F– Rev 0 May, 2005 VBUS APTM10AM02F All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z trr Reverse Recovery Time Qrr Reverse Recovery Charge 2.25 2 Min VGS = 10V VBus = 50V ID = 400A Typ 40 15.7 5.9 1360 Unit Max Unit µA mΩ V nA nF nC 720 Inductive switching VGS = 15V VBus = 66V ID = 400A R G = 1.25Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, R G =1.25Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, R G = 1.25Ω Test Conditions 160 240 500 ns 160 2.2 mJ 2.41 2.43 mJ 2.56 Min Typ Tj = 25°C Max 495 370 1.3 5 190 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 400A IS = - 400A VR = 66V diS/dt = 400A/µs IS = - 400A VR = 66V diS/dt = 400A/µs Max 400 2000 2.5 4 ±400 240 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 1.6 Tj = 125°C 6.8 Unit A V V/ns ns µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 495A di/dt ≤ 400A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTM10AM02F– Rev 0 May, 2005 Electrical Characteristics APTM10AM02F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3-6 APTM10AM02F– Rev 0 May, 2005 Package outline (dimensions in mm) APTM10AM02F Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 V GS=15V, 10V & 9V 2000 ID, Drain Current (A) 1500 8V 1000 7V 6V 500 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 T J=25°C 80 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 200A 1.1 VGS =10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 500 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance T J=-55°C 0 0.8 400 300 200 100 0 0 100 200 300 400 ID, Drain Current (A) 500 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTM10AM02F– Rev 0 May, 2005 ID, Drain Current (A) 2500 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 200A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 1000 limited by RDSon 100µs 1ms 100 10ms 10 Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 10 100 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=400A TJ=25°C 14 V DS =20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 400 APT website – http://www.advancedpower.com 800 1200 1600 2000 Gate Charge (nC) 5-6 APTM10AM02F– Rev 0 May, 2005 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10AM02F APTM10AM02F Delay Times vs Current Rise and Fall times vs Current 300 600 250 400 t d(off) VDS=66V RG=1.25Ω T J=125°C L=100µH 300 200 t r and tf (ns) td(on) 200 tf 150 VDS=66V RG=1.25Ω T J=125°C L=100µH 100 50 100 0 0 50 150 250 350 450 550 I D, Drain Current (A) 650 50 250 350 450 550 ID, Drain Current (A) 650 9 VDS=66V RG=1.25Ω TJ=125°C L=100µH 3 Switching Energy (mJ) 4 Eoff Eon 2 1 0 V DS =66V ID=400A T J=125°C L=100µH 8 7 6 Eoff 5 4 Eon 3 2 1 50 150 250 350 450 550 650 0 2.5 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 30 20 ZVS 10 0 100 VDS=66V D=50% RG=1.25Ω T J=125°C T C=75°C 200 Hard switching 300 400 ID, Drain Current (A) 7.5 10 12.5 15 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 50 40 5 Gate Resistance (Ohms) 60 Frequency (kHz) 150 Switching Energy vs Gate Resistance Switching Energy vs Current 5 Eon and Eoff (mJ) tr 500 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10AM02F– Rev 0 May, 2005 t d(on) and td(off) (ns) 500