BF2040... Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 SOT143 1=S 2=D 3=G2 4=G1 - - NFs BF2040R SOT143 1=D 2=S 3=G1 4=G2 - - NFs BF2040W SOT343 1=D 2=S 3=G1 4=G2 - - NF Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID 20 Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 7 Total power dissipation Ptot Value 8 Unit V mA V mW TS ≤ 76 °C, BF2040, BF2040R 200 TS ≤ 94 °C, BF2040W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 °C Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF2040, BF2040R ≤ 370 BF2040W ≤ 280 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-25-2004 BF2040... Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 +IG2SS - - 50 IDSS - - 50 µA IDSX - 15 - mA VG1S(p) 0.3 0.6 - V VG2S(p) 0.3 0.7 - DC Characteristics Drain-source breakdown voltage V ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current nA VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 2 Feb-25-2004 BF2040... Electrical Characteristics Symbol Parameter Values Unit min. typ. max. 37 42 - mS Cg1ss - 2.9 3.4 pF Cdss - 1.6 - 20 23 - dB - 1.6 2.2 dB 45 50 - AC Characteristics - (verified by random sampling) Forward transconductance gfs VDS = 5 V, I D = 15 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Power gain Gp VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz Noise figure F VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz ∆G p Gain control range VDS = 5 V, V G2S = 4 ...0 V , f = 800 GHz 3 Feb-25-2004 BF2040... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BF2040, BFD2040R BF2040W 220 220 mA 180 180 160 160 P tot P tot mW 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Drain current ID = ƒ(IG1) Output characteristics ID = ƒ(V DS) VG2S = 4 V VG2S = 4V 28 mA 26 mA 24 22 22 20 20 18 18 ID ID VG1S = Parameter 16 1.3V 16 14 14 1.2V 12 12 10 10 1.1V 8 8 1V 6 6 4 4 2 2 0 0 1.4V 10 20 30 40 50 60 70 µA 0 0 90 IG1 1 2 3 4 5 6 7 8 V 10 VDS 4 Feb-25-2004 BF2040... Gate 1 current IG1 = ƒ(V G1S) Gate 1 forward transconductance VDS = 5V g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 195 µA 45 mS 4V 4V 165 35 150 g fs 135 I G1 3.5V 3.5V 120 105 30 3V 25 3V 90 2.5V 20 2V 75 15 2.5V 60 45 10 2V 30 5 15 0 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3.2 4 8 12 16 20 24 28 32 mA VG1S Drain current ID = ƒ(VG1S) 40 ID VDS = 5V Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V, RG1 = 80kΩ VG2S = Parameter (connected to VGG, V GG=gate1 supply voltage) 16 28 mA 4V mA 3V 24 22 12 18 ID ID 20 10 16 2V 14 8 12 6 10 8 1.5V 4 6 4 2 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 1 2 3 V 5 VGG 5 Feb-25-2004 BF2040... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 28 mA 70 24 80 22 90 ID 20 18 110 16 130 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 V 8 VGG=VDS 6 Feb-25-2004