IDT IDT71V65603 3.3v synchronous zbt sram Datasheet

256K x 36, 512K x 18
3.3V Synchronous ZBT™ SRAMs
ZBT™ Feature
3.3V I/O, Burst Counter
Pipelined Outputs
Address and control signals are applied to the SRAM during one clock
cycle, and two cycles later the associated data cycle occurs, be it read or write.
The IDT71V65603/5803 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V65603/5803
to be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will be
completed. The data bus will tri-state two cycles after chip is deselected
or a write is initiated.
The IDT71V65603/5803 have an on-chip burst counter. In the burst
mode, the IDT71V65603/5803 can provide four cycles of data for a
single address presented to the SRAM. The order of the burst
sequence is defined by the LBO input pin. The LBO pin selects
between linear and interleaved burst sequence. The ADV/LD signal is
used to load a new external address (ADV/LD = LOW) or increment
the internal burst counter (ADV/LD = HIGH).
The IDT71V65603/5803 SRAM utilize IDT's latest high-performance
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA) .
Features
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IDT71V65603/Z
IDT71V65803/Z
256K x 36, 512K x 18 memory configurations
Supports high performance system speed - 150MHz
(3.8ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the
need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control signal
registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%)
3.3V I/O Supply (VDDQ)
Power down controlled by ZZ input
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array(fBGA).
Description
The IDT71V65603/5803 are 3.3V high-speed 9,437,184-bit
(9 Megabit) synchronous SRAMS. They are designed to eliminate dead bus
cycles when turning the bus around between reads and writes, or writes and
reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround.
Pin Description Summary
A0-A18
Address Inputs
Input
Synchronous
CE1, CE2, CE2
Chip Enables
Input
Synchronous
OE
Output Enable
Input
Asynchronous
R/W
Read/Write Signal
Input
Synchronous
CEN
Clock Enable
Input
Synchronous
BW1, BW2, BW3, BW4
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV/LD
Advance burst address / Load new address
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
Static
ZZ
Sleep Mode
Input
Asynchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
Static
VSS
Ground
Supply
Static
5304 tbl 01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
OCTOBER 2008
1
©2008 Integrated Device Technology, Inc.
DSC-5304/08
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O
Active
Description
A 0-A 18
Address Inputs
I
N/A
Synchronous Address inputs. The address register is trig gered by a combination of the
rising edge of CLK, ADV/LD low, CEN low, and true chip enables.
ADV/LD
Advance / Load
I
N/A
ADV/LD is a synchronous input that is used to load the internal registers with new address
and control when it is sampled low at the rising edge of clock with the chip selected. When
ADV/LD is low with the chip deselected, any burst in progress is terminated. When ADV/ LD
is sampled hig h then the internal burst counter is advanced for any burst that was in
progress. The external addresses are ignored when ADV/LD is sampled high.
R/W
Read / Write
I
N/A
R/W signal is a synchronous input that identifies whether the current load cycle initiated is a
Read or Write access to the memory array. The data bus activity for the current cycle takes
place two clock cycles later.
CEN
Clock Enable
I
LOW
Synchronous Clock Enable Input. When CEN is sampled high, all other synchronous
inputs, including clock are ignored and outputs re main unchanged. The effect of CEN
sampled high on the device outp uts is as if the low to hig h clock transition did not occur.
For normal operation, CEN must be sampled low at rising edge of clock.
BW1-BW4
Individual Byte
Write Enables
I
LOW
Synchro nous byte write enables. Each 9-bit byte has its own active low byte write enable.
On load write cycles (When R/W and ADV/LD are sampled low) the appropriate byte write
signal (BW1-BW4) must be valid. The byte write signal must also be valid on each cycle of
a burst write. Byte Write signals are ignored when R/W is sampled high. The appropriate
byte(s) of data are written into the device two cycles later. BW1-BW4 can all be tied low if
always doing write to the entire 36-bit word.
CE1, CE2
Chip Enables
I
LOW
Synchronous active low chip enable. CE1 and CE2 are used with CE2 to enable the
IDT71V65603/5803. (CE1 or CE2 sampled high or CE2 sampled low) and ADV/LD low at the
rising edge of clock, initiates a deselect cycle. The ZBTTM has a two cycle deselect, i.e.,
the data bus will tri-state two clock cycles after deselect is initiated.
CE2
Chip Enable
I
HIGH
Synchrono us active high chip enable. CE 2 is used with CE1 and CE2 to enable the chip.
CE2 has inverted po larity but otherwise identical to CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V65603/5803. Except for OE, all timing references for the
device are made with respect to the rising edge of CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchro nous data input/output (I/O) pins. Both the data input path and data output path are
registered and triggered by the rising edge of CLK.
LBO
Linear Burst Order
I
LOW
Burst order selection input. When LBO is high the Interleaved burst sequence is selected.
When LBO is low the Line ar burst sequence is selected. LBO is a static input and it must
not change during device operation.
OE
Output Enable
I
LOW
Asynchronous output enable. OE must be low to read data from the 71V65603/5803. When
OE is high the I/O pins are in a high-impedance state. OE does not need to be actively
controlled for read and write cycles. In normal operation, OE can be tied low.
ZZ
Sleep Mode
I
N/A
Asynchro nous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
71V65603/5803 to its lowest p ower consumption level. Data retention is guaranteed in
Sleep Mode.
V DD
Power Supply
N/A
N/A
3.3V core power supply.
VDDQ
Power Supply
N/A
N/A
3.3V I/O Supply.
V SS
Ground
N/A
N/A
Ground.
5304tbl 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Functional Block Diagram
512x18 BIT
MEMORY ARRAY
LBO
Address A [0:18]
D
Q
Address
D
Q
Control
C E1, CE2, C E2
R/W
Input Register
C EN
ADV/LD
BW x
D
DI
DO
Control Logic
Q
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
5304 drw 01
Data I/O [0:15],
I/O P[1:2]
6.42
3
,
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Functional Block Diagram
512x18 BIT
MEMORY ARRAY
LBO
Address A [0:18]
D
Q
Address
D
Q
Control
C E1, CE2, C E2
R/W
Input Register
C EN
ADV/LD
BW x
D
DI
Q
DO
Control Logic
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
5304 drw 01
Data I/O [0:15],
I/O P[1:2]
Recommended DC Operating
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Supply Voltage
0
0
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDD+0.3
V
VIH
Input High Voltage - I/O
2.0
____
VDDQ+0.3
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
NOTES:
1. VIL (min.) = –1.0V for pulse width less than t CYC/2, once per cycle.
5304 tbl 04
6.42
4
,
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Ambient
Temperature(1)
VSS
VDD
V DDQ
Commercial
0° C to +70° C
0V
3.3V±5%
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
3.3V±5%
5304 tbl 05
NOTES:
1. During production testing, the case temperature equals the ambient temperature.
CE2
BW4
BW3
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
A17
A8
A9
A6
A7
CE1
Pin Configuration - 256K x 36
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/O23
VDD(1)
VDD
VDD(1)
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
VDD(1)
VDD
ZZ
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
LBO
A5
A4
A3
A2
A1
A0
DNU(3)
DNU(3)
VSS
VDD
DNU(3)
DNU(3)
A10
A11
A12
A13
A14
A15
A16
5304 drw 02
,
Top View
100 TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as the input voltage is ≥ VIH.
2. Pin 84 is reserved for a future 16M.
3. DNU=Do not use. Pins 38, 39, 42 and 43 are reserved for respective JTAG pins: TMS, TDI, TDO and TCK. The current die
revision allows these pins to be left unconnected, tied LOW (VSS), or tied HIGH (VDD).
6.42
5
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
CE2
NC
NC
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
A18
A8
A9
A6
A7
CE1
Pin Configuration - 512K x 18
Symbol
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
1
80
2
79
3
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
I/O11
VDD(1)
VDD
VDD(1)
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
4
78
77
5
6
76
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
24
58
57
25
56
26
55
27
54
28
53
29
A10
NC
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD(1)
VDD
ZZ
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
52
51
30
A11
A12
A13
A14
A15
A16
A17
LBO
A5
A4
A3
A2
A1
A0
DNU(3)
DNU(3)
VSS
VDD
DNU(3)
DNU(3)
5304 drw 02a
Top View
100 TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as the
input voltage is ≥ VIH.
2. Pin 84 is reserved for a future 16M.
3. DNU=Do not use. Pins 38, 39, 42 and 43 are reserved for respective JTAG
pins: TMS, TDI, TDO and TCK. The current die revision allows these pins to be
left unconnected, tied LOW (VSS), or tied HIGH (VDD).
100 TQFP Capacitance(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Input Capacitance
CI/O
I/O Capacitance
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
Commercial
Operating Temperature
-0 to +70
o
C
-40 to +85
o
C
(7)
-55 to +125
o
C
TSTG
Storage
Temperature
-55 to +125
o
C
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
5304 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary; however,
the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp
up.
7. During production testing, the case temperature equals TA.
(TA = +25° C, f = 1.0MHz)
Conditions
Max.
Unit
Symbol
VIN = 3dV
5
pF
CIN
Input Capacitance
VOUT = 3dV
7
pF
CI/O
I/O Capacitance
119 BGA Capacitance
CIN
VTERM(3,6)
Temperature
Under Bias
Conditions
Max.
Unit
VIN = 3dV
7
pF
VOUT = 3dV
7
Parameter(1)
Conditions
Max.
Unit
VIN = 3dV
TBD
pF
VOUT = 3dV
TBD
pF
5304 tbl 07b
(1)
(TA = +25° C, f = 1.0MHz)
Parameter(1)
V
TBIAS
5304 tbl 07
Symbol
-0.5 to +4.6
165 fBGA Capacitance(1)
(TA = +25° C, f = 1.0MHz)
Parameter(1)
Unit
Terminal Voltage with
Respect to GND
Industrial
Operating Temperature
,
Commercial &
Industrial
VTERM(2)
TA
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Symbol
Rating
pF
5304 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
6
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Pin Configuration - 256K X 36, 119 BGA
1
2
3
4
5
6
7
A8
A16
VDDQ
NC
A
VDDQ
A6
A4
NC(2)
B
NC
CE 2
A3
ADV/LD
A9
CE2
C
NC
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/OP2
I/O15
E
I/O17
I/O18
VSS
CE1
VSS
I/O13
I/O14
F
VDDQ
I/O19
VSS
OE
VSS
I/O12
VDDQ
G
I/O20
I/O21
BW3
A17
BW 2
I/O11
I/O10
H
I/O22
I/O23
VSS
R/W
VSS
I/O9
I/O8
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
CEN
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/OP1
I/O0
R
NC
A5
LBO
VDD
A13
NC
T
NC
NC
U
VDDQ
A10
(3)
DNU
VDD(1)
A11
(3)
A14
(3)
DNU
DNU
NC
(3)
DNU
ZZ
(3)
DNU
VDDQ
5304 drw 13A
Top View
,
Pin Configuration - 512K X 18, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
NC(2)
A8
A16
VDDQ
B
NC
CE2
A3
ADV/LD
A9
CE2
NC
C
NC
A7
A2
VDD
A13
A17
NC
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE1
VSS
NC
I/O7
F
VDDQ
NC
VSS
OE
VSS
I/O6
VDDQ
G
NC
I/O10
BW2
A18
VSS
NC
I/O5
H
I/O11
NC
VSS
R/W
VSS
I/O4
NC
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
L
I/O13
NC
VSS
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
CEN
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O 1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O 0
R
NC
A5
LBO
VDD
VDD(1)
A12
NC
T
NC
A10
A15
NC
A14
A11
U
VDDQ
DNU(3)
DNU(3)
DNU(3)
DNU(3)
DNU (3)
Top View
ZZ
VDDQ
5304 drw 13B
NOTES:
1. J3, J5, and R5 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. A4 is reserved for future 16M.
3. DNU = Do not use. Pin U2, U3, U4, U5 and U6 are reserved for respective JTAG pins: TMS, TDI, TCK, TDO and TRST. The current die revision allows these pins to
be left unconnected, tied LOW (VSS), or tied HIGH (VDD).
6.42
7
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Pin Configuration - 256K X 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC(2)
A7
CE1
BW3
BW2
CE2
CEN
ADV/LD
A 17
A8
NC
B
NC
A6
CE 2
BW4
BW1
CLK
R/W
OE
NC(2)
A9
NC(2)
C
I/OP3
NC
V DDQ
V SS
VSS
VSS
V SS
VSS
VDDQ
NC
I/OP2
D
I/O17
I/O16
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O15
I/O14
E
I/O19
I/O18
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O13
I/O12
F
I/O21
I/O20
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O11
I/O10
G
I/O23
I/O22
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O9
I/O8
H
VDD(1)
V DD(1)
NC
V DD
VSS
VSS
V SS
VDD
NC
NC
ZZ
J
I/O25
I/O24
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O7
I/O6
K
I/O27
I/O26
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O5
I/O4
L
I/O29
I/O28
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O3
I/O2
M
I/O31
I/O30
V DDQ
V DD
VSS
VSS
V SS
VDD
VDDQ
I/O1
I/O0
N
I/OP4
NC
V DDQ
V SS
(3)
DNU
NC
VDD
(1)
VSS
VDDQ
NC
I/OP1
P
NC
NC(2)
A5
A2
DNU(3)
A1
DNU(3)
A10
A 13
A14
NC
LBO
NC
A4
A3
DNU
A0
DNU
A11
A 12
A15
A16
R
(2)
(3)
(3)
5304 tbl 25a
Pin Configuration - 512K X 18, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC(2)
A7
CE1
BW2
NC
CE2
CEN
ADV/LD
A 18
A8
A10
B
NC
A6
CE 2
NC
BW1
CLK
R/W
OE
NC(2)
A9
NC(2)
C
NC
NC
VDDQ
V SS
VSS
VSS
VSS
VSS
VDDQ
NC
I/OP1
D
NC
I/O8
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O7
E
NC
I/O9
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O6
F
NC
I/O10
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O5
G
NC
I/O11
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O4
H
VDD(1)
VDD(1)
NC
V DD
VSS
VSS
VSS
VDD
NC
NC
ZZ
J
I/O12
NC
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
I/O3
NC
K
I/O13
NC
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
I/O2
NC
L
I/O14
NC
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
I/O1
NC
M
I/O15
NC
VDDQ
V DD
VSS
VSS
VSS
VDD
VDDQ
I/O0
NC
N
I/OP2
NC
VDDQ
V SS
DNU
NC
VDD
P
NC
(2)
NC
A5
A2
(3)
DNU
R
LBO
NC(2)
A4
A3
DNU(3)
(3)
VSS
VDDQ
NC
NC
A1
(3)
DNU
A11
A 14
A15
NC
A0
DNU(3)
A 12
A 13
A16
A17
(1)
5304 tbl25b
NOTES:
1. H1, H2, and N7 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. B9, B11, A1, R2 and P2 is reserved for future 18M, 36M, 72M, 144M and 288M, respectively.
3. DNU=Do not use. Pins P5, R5, P7 and R7 are reserved for respective JTAG pins: TDI, TMS, TDO and TCK on future revisions. The current die revision allows these
pins to be left unconnected, tied LOW (V SS), or tied HIGH (VDD).
6.42
8
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Synchronous Truth Table(1)
CEN
R/W
Chip(5)
Enable
ADV/LD
BWx
ADDRESS
USED
PREVIOUS CYCLE
CURRENT CYCLE
I/O
(2 cycles later)
L
L
Select
L
Valid
External
X
LOAD WRITE
D(7)
L
H
Select
L
X
External
X
LOAD READ
Q(7)
L
X
X
H
Valid
Internal
LOAD WRITE /
BURST WRITE
BURST WRITE
(Advance burst counter)(2)
D(7)
L
X
X
H
X
Internal
LOAD READ /
BURST READ
BURST READ
(Advance burst counter)(2)
Q(7)
L
X
Deselect
L
X
X
X
DESELECT or STOP (3)
HiZ
L
X
X
H
X
X
DESELECT / NOOP
NOOP
HiZ
H
X
X
X
X
X
X
SUSPEND(4)
Previous Value
5304 tbl 08
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of the burst
cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when either (CE1, or CE2 is sampled high or CE2 is sampled low) and ADV/LD is sampled low at rising edge of clock. The data bus will tri-state
two cycles after deselect is initiated.
4. When CEN is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. The state of all the internal registers and the I/Os remains
unchanged.
5. To select the chip requires CE1 = L, CE2 = L, CE2 = H on these chip enables. Chip is deselected if any one of the chip enables is false.
6. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
7. Q - Data read from the device, D - data written to the device.
Partial Truth Table for Writes(1)
R/W
BW 1
BW 2
BW 3(3)
BW 4(3)
H
X
X
X
X
L
L
L
L
L
L
L
H
H
H
WRITE BYTE 2 (I/O[8:15], I/OP2)(2)
L
H
L
H
H
WRITE BYTE 3 (I/O[16:23], I/OP3)(2,3)
L
H
H
L
H
(2,3)
WRITE BYTE 4 (I/O[24:31], I/OP4)
L
H
H
H
L
NO WRITE
L
H
H
H
H
OPERATION
READ
WRITE ALL BYTES
WRITE BYTE 1 (I/O[0:7], I/OP1)
(2)
5304 tbl 09
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Multiple bytes may be selected during the same cycle.
3. N/A for X18 configuration.
6.42
9
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Interleaved Burst Sequence Table (LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
0
0
1
1
1
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address (1)
1
1
1
0
0
1
0
0
5304 tbl 10
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Linear Burst Sequence Table (LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
1
0
1
1
0
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address (1)
1
1
0
0
0
1
1
0
5304 tbl 11
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Functional Timing Diagram(1)
CYCLE
n+29
n+30
n+31
n+32
n+33
n+34
n+35
n+36
n+37
A29
A30
A31
A32
A33
A34
A35
A36
A37
C29
C30
C31
C32
C33
C34
C35
C36
C37
D/Q27
D/Q28
D/Q29
D/Q30
D/Q31
D/Q32
D/Q33
D/Q34
D/Q35
CLOCK
(2)
ADDRESS
(A0 - A17)
(2)
CONTROL
(R/W, ADV/LD, BWx)
(2)
DATA
I/O [0:31], I/O P[1:4]
5304 drw 03
NOTES:
1. This assumes CEN, CE1, CE2, CE2 are all true.
2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data delay
from the rising edge of clock.
6.42
10
,
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Device Operation - Showing Mixed Load, Burst,
Deselect and NOOP Cycles(2)
Cycle
Address
R/W
ADV/LD
CE (1)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Load read
n+1
X
X
H
X
L
X
X
X
Burst read
n+2
A1
H
L
L
L
X
L
Q0
Load read
n+3
X
X
L
H
L
X
L
Q0+1
n+4
X
X
H
X
L
X
L
Q1
NOOP
n+5
A2
H
L
L
L
X
X
Z
Load read
n+6
X
X
H
X
L
X
X
Z
Burst read
n+7
X
X
L
H
L
X
L
Q2
Deselect or STOP
n+8
A3
L
L
L
L
L
L
Q2+1
Load write
n+9
X
X
H
X
L
L
X
Z
Burst write
n+10
A4
L
L
L
L
L
X
D3
Load write
n+11
X
X
L
H
L
X
X
D3+1
n+12
X
X
H
X
L
X
X
D4
NOOP
n+13
A5
L
L
L
L
L
X
Z
Load write
n+14
A6
H
L
L
L
X
X
Z
Load read
n+15
A7
L
L
L
L
L
X
D5
Load write
n+16
X
X
H
X
L
L
L
Q6
Burst write
n+17
A8
H
L
L
L
X
X
D7
Load read
n+18
X
X
H
X
L
X
X
D7+1
Burst read
n+19
A9
L
L
L
L
L
L
Q8
Load write
Deselect or STOP
Deselect or STOP
5304tbl 12
NOTES:
1. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
2. H = High; L = Low; X = Don’t Care; Z = High Impedance.
Read Operation(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
X
Clock Setup Valid
n+2
X
X
X
X
X
X
L
Q0
Contents of Address A0 Read Out
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
11
5304 tbl 13
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Burst Read Operation(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
H
X
L
X
X
X
Clock Setup Valid, Advance Counter
n+2
X
X
H
X
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+3
X
X
H
X
L
X
L
Q0+1
Address A0+1 Read Out, Inc. Count
n+4
X
X
H
X
L
X
L
Q0+2
Address A0+2 Read Out, Inc. Count
n+5
A1
H
L
L
L
X
L
Q0+3
Address A0+3 Read Out, Load A1
n+6
X
X
H
X
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+7
X
X
H
X
L
X
L
Q1
Address A1 Read Out, Inc. Count
n+8
A2
H
L
L
L
X
L
Q1+1
Address A1+1 Read Out, Load A2
5304 tbl 14
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance..
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
X
Clock Setup Valid
n+2
X
X
X
X
L
X
X
D0
Write to Address A0
5304 tbl 15
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Burst Write Operation(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
H
X
L
L
X
X
Clock Setup Valid, Inc. Count
n+2
X
X
H
X
L
L
X
D0
Address A0 Write, Inc. Count
n+3
X
X
H
X
L
L
X
D0+1
Address A0+1 Write, Inc. Count
n+4
X
X
H
X
L
L
X
D0+2
Address A0+2 Write, Inc. Count
n+5
A1
L
L
L
L
L
X
D0+3
Address A0+3 Write, Load A1
n+6
X
X
H
X
L
L
X
D0
Address A0 Write, Inc. Count
n+7
X
X
H
X
L
L
X
D1
Address A1 Write, Inc. Count
n+8
A2
L
L
L
L
L
X
D1+1
Address A1+1 Write, Load A2
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
12
5304 tbl 16
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Read Operation with Clock Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored
n+2
A1
H
L
L
L
X
X
X
Clock Valid
n+3
X
X
X
X
H
X
L
Q0
Clock Ignored, Data Q0 is on the bus.
n+4
X
X
X
X
H
X
L
Q0
Clock Ignored, Data Q0 is on the bus.
n+5
A2
H
L
L
L
X
L
Q0
Address A0 Read out (bus trans.)
n+6
A3
H
L
L
L
X
L
Q1
Address A1 Read out (bus trans.)
n+7
A4
H
L
L
L
X
L
Q2
Ad dress A2 Read out (bus trans.)
5304 tbl 17
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation with Clock Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup.
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored.
n+2
A1
L
L
L
L
L
X
X
Clock Valid.
n+3
X
X
X
X
H
X
X
X
Clock Ignored.
n+4
X
X
X
X
H
X
X
X
Clock Ignored.
n+5
A2
L
L
L
L
L
X
D0
Write Data D0
n+6
A3
L
L
L
L
L
X
D1
Write Data D1
n+7
A4
L
L
L
L
L
X
D2
Write Data D2
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
13
5304 tbl 18
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
?
Deselected.
n+2
A0
H
L
L
L
X
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A1
H
L
L
L
X
L
Q0
Address A0 Read out. Load A 1.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
L
Q1
Address A1 Read out. Deselected.
n+7
A2
H
L
L
L
X
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
L
Q2
Address A2 Read out. Deselected.
5304 tbl 19
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE (2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
?
Deselected.
n+2
A0
L
L
L
L
L
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A1
L
L
L
L
L
X
D0
Address D0 Write in. Load A 1.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
X
D1
Address D1 Write in. Deselected.
n+7
A2
L
L
L
L
L
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
X
D2
Address D2 Write in. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
14
5304 tbl 20
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V +/-5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to V DD
___
5
µA
|ILI|
LBO Input Leakage Current(1)
VDD = Max., VIN = 0V to V DD
___
30
µA
|ILO|
Output Leakage Current
VOUT = 0V to V DDQ, Device Deselected
___
5
µA
VOL
Output Low Voltage
IOL = +8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = -8mA, VDD = Min.
2.4
___
V
NOTE:
1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application and the ZZ pin will be internally pulled to Vss if not actively driven.
5304 tbl 21
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1) (VDD = 3.3V +/-5%)
150MHz
Symbol
Parameter
IDD
ISB1
ISB2
ISB3
IZZ
Test Conditions
133MHz
100MHz
Unit
Com'l
Ind
Com'l
Ind
Com'l
Ind
Operating Power
Supply Current
Device Selected, Outputs Open,
ADV/LD = X, VDD = Max.,
V IN > VIH or < VIL, f = fMAX(2)
325
345
300
320
250
270
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open,
V DD = Max., VIN > VHD or < VLD,
f = 0(2,3)
40
60
40
60
40
60
Clock Running Power
Supply Current
Device Deselected, Outputs Open,
V DD = Max., VIN > VHD or < VLD,
f = fMAX(2.3)
120
140
110
130
100
120
Idle Power
Supply Current
Device Selected, Outputs Open,
CEN > VIH, VDD = Max.,
V IN > VHD or < VLD, f = fMAX(2,3)
40
60
40
60
40
60
Full Sleep Mode
Supply Current
Device Selected, Outputs Open
CEN ≤ VIL, VDD = Max., ZZ ≥ VHD
V IN ≥ V HD or ≤ VLD, f = fMax (2,3)
40
60
40
60
40
60
5304 drw 04
,
6
Figure 1. AC Test Load
5
•
4
ΔtCD 3
(Typical, ns)
2
1
•
•
20 30 50
Input Pulse Levels
mA
0 to 3V
Input Rise/Fall Times
2ns
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
AC Test Load
• •
80 100
Capacitance (pF)
mA
(VDDQ = 3.3V)
50Ω
Z0 = 50Ω
mA
AC Test Conditions
VDDQ/2
I/O
mA
5304 tbl 22
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/t CYC; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ – 0.2V, VLD = 0.2V. For other inputs VHD = VDD – 0.2V, VLD = 0.2V.
AC Test Load
mA
See Figure 1
5304 tbl 23
200
5304 drw 05
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
15
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V +/-5%, Commercial and Industrial Temperature Ranges)
150MHz(6)
Symbol
Parameter
133MHz
100MHz
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC
Clock Cycle Time
6.7
____
7.5
____
10
____
ns
(1)
150
____
133
____
100
MHz
2.2
____
3.2
____
ns
____
ns
Clock Frequency
____
(2)
tCH
Clock High Pulse Width
2.0
____
tCL(2)
Clock Low Pulse Width
2.0
____
2.2
____
3.2
tF
Output Parameters
tCD
Clock High to Valid Data
____
3.8.
____
4.2
____
5
ns
tCDC
Clock High to Data Change
1.5
____
1.5
____
1.5
____
ns
tCLZ
Clock High to Output Active
1.5
____
1.5
____
1.5
____
ns
tCHZ(3,4,5)
Clock High to Data High-Z
1.5
3
1.5
3
1.5
3.3
ns
tOE
Output Enable Access Time
____
3.8
____
4.2
____
5
ns
tOLZ(3,4)
Output Enable Low to Data Active
0
____
0
____
0
____
ns
tOHZ(3,4)
Output Enable High to Data High-Z
____
3.8
____
4.2
____
5
ns
(3,4,5)
Set Up Times
tSE
Clock Enable Setup Time
1.5
____
1.7
____
2.0
____
ns
tSA
Address Setup Time
1.5
____
1.7
____
2.0
____
ns
tSD
Data In Setup Time
1.5
____
1.7
____
2.0
____
ns
tSW
Read/Write (R/W) Setup Time
1.5
____
1.7
____
2.0
____
ns
tSADV
Advance/Load (ADV/LD) Setup Time
1.5
____
1.7
____
2.0
____
ns
tSC
Chip Enable/Select Setup Time
1.5
____
1.7
____
2.0
____
ns
tSB
Byte Write Enable (BWx) Setup Time
1.5
____
1.7
____
2.0
____
ns
tHE
Clock Enable Hold Time
0.5
____
0.5
____
0.5
____
ns
tHA
Address Hold Time
0.5
____
0.5
____
0.5
____
ns
tHD
Data In Hold Time
0.5
____
0.5
____
0.5
____
ns
tHW
Read/Write (R/W) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHADV
Advance/Load (ADV/LD) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHC
Chip Enable/Select Hold Time
0.5
____
0.5
____
0.5
____
ns
tHB
Byte Write Enable (BWx) Hold Time
0.5
____
0.5
____
0.5
____
ns
Hold Times
5304 tbl 24
NOTES:
1. tF = 1/tCYC.
2. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
3. Transition is measured ±200mV from steady-state.
4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and voltage. The
specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 3.465V) than tCHZ, which is a
Max. parameter (worse case at 70 deg. C, 3.135V).
6. Commercial temperature range only.
6.42
16
6.42
17
A1
tSADV
tHA
tHW
tHE
tCLZ
tHC
Pipeline
Read
tSC
A2
tSA
tSW
tSE
tCD
Pipeline
Read
Q(A1)
tHADV
tCH
tCDC
tCL
2)
Q(A
O1(A2)
,
O2(A2)
2+1)
Q(A
Q(A2+2)
(CEN high, eliminates
current L-H clock edge)
Burst Pipeline Read
tCD
Q(A2+2)
tCDC
Q(A2+3)
tCHZ
Q(A
2)
O1(A2)
5304 drw 06
(Burst Wraps around
to initial state)
NOTES:
1. Q (A1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A 2; Q (A2+1) represents the next output data in the burst sequence
of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control
are loaded into the SRAM.
DATAOUT
OE
BW1 - BW4
CE1, CE2
(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle(1,2,3,4)
CLK
tCH
tSE
tCL
tHE
CEN
tSADV
tHADV
ADV/LD
tSW
tHW
R/W
tSA
A1
ADDRESS
tHA
A2
tSC
CE1, CE2
tHC
(2)
6.42
18
tSB
tHB
BW1 - BW4
OE
tSD
DATAIN
(CEN high, eliminates
current L-H clock edge)
tHD
D(A1)
Pipeline
Write
D(A2)
D(A2+1)
tSD
tHD
D(A2+2)
(Burst Wraps around
to initial state)
D(A2+3)
D(A2)
Burst Pipeline Write
Pipeline
Write
.
NOTES:
1. D (A1) represents the first input to the external address A1. D (A2) represents the first input to the external address A2; D (A2+1) represents the next input data in the burst sequence of
the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address
and control are loaded into the SRAM.
5. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
5304 drw 07
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
ZBT™
Commercial and Industrial Temperature Ranges
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
Timing Waveform of Write Cycles(1,2,3,4,5)
tCYC
tCH
tSE
tCL
tHE
CEN
tSADV
tHADV
ADV/LD
tSW
tHW
R/W
tSA
ADDRESS
A1
tHA
A2
A3
A5
A4
A6
A7
D(A4)
D(A5)
A8
A9
tSC
tHC
CE1, CE2(2)
6.42
19
tSB
tHB
BW1 - BW4
OE
tSD tHD
D(A2)
DATAIN
Write
tCHZ
tCD
Write
tCLZ
Read
Q(A6)
Q(A3)
Q(A1)
DATAOUT
tCDC
Read
Q(A7)
Read
5304 drw 08
,
NOTES:
1. Q (A1) represents the first output from the external address A 1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
,
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
ZBT™
Commercial and Industrial Temperature Ranges
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
CLK
Timing Waveform of Combined Read and Write Cycles(1,2,3)
tCYC
tCH
tSE
tCL
tHE
CEN
tSADV
tHADV
ADV/LD
tSW
tHW
R/W
tSA
ADDRESS
A1
tHA
A2
tSC
A4
A3
A5
tHC
6.42
20
CE1, CE2(2)
tSB
BW1 - BW4
tHB
B(A2)
OE
tSD tHD
DATAIN
tCHZ
tCDC
tCD
Q(A1)
DATAOUT
D(A2)
Q(A1)
Q(A3)
tCLZ
5304 drw 09
NOTES:
1. Q (A1) represents the first output from the external address A 1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE 2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not
occur. All internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
ZBT™
Commercial and Industrial Temperature Ranges
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
CLK
Timing Waveform of CEN Operation(1,2,3,4)
tCYC
6.42
21
A1
tSADV
tHW
tHE
tSC
tCLZ
tCD
tHC
tHA
A2
tSA
tSW
tSE
Q(A1)
tHADV
tCH
tCDC
tCHZ
tHB
Q(A2)
tSB
A3
tCL
D(A3)
tSD tHD
A4
Q(A4)
A5
5304 drw 10
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A3) represents the input data to the SRAM corresponding to address A3.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not
occur. All internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2
(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Timing Waveform of CS Operation(1,2,3,4)
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
100-Pin Plastic Thin Quad Flatpack (TQFP) Package Diagram Outline
6.42
22
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
119 Ball Grid Array(BGA) Package Diagram Outline
6.42
23
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
6.42
24
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Timing Waveform of OE Operation(1)
OE
tOE
tOHZ
tOLZ
Valid
DATAOUT
,
5304 drw 11
NOTE:
1. A read operation is assumed to be in progress.
Ordering Information
6.42
25
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
ZBT™
Commercial and Industrial Temperature Ranges
Datasheet Document History
12/31/99
03/04/00
04/20/00
05/23/00
07/28/00
11/04/00
10/16/01
12/04/02
12/19/02
09/30/04
02/21/07
10/16/08
Created new datasheet from obsolete devices IDT71V656 and IDT71V658
Removed 166MHz speed grade offering; Added 150MHz speed grade offering
Added JTAG test pins to TQFP pin configuration; removed footnote
Add clarification note to Recommended Operating temperature and Absolute Max Ratings tables
Add note to BGA pin Configuration; correct typo within pinout
Insert TQFP Package Diagram Outline
Add new package offering, 13 x 15mm 165 fBGA
Pg. 23
Correction in BG 119 Package Diagram Outline
Add industrial temperature
Pg. 2
Correction VDDQ 3.3V I/O supply
Pg. 5-8
Remove JTAG offerings, refer to IDT71V656xx and IDT71V658xx device errata sheet
Pg. 7
Correct pin B2
Pg. 8
Change pin B1 to NC
Pg. 23
Update BG119 Package Diagram Outline
Pg. 8
Add note to pin N5 on BQ165 pinout, reserved for JTAG TRST
Pg. 15
Add Izz parameter to DC Electrical Characteristics
Pg. 16
Changed sub-header to include Commercial and Industrial Temperature Ranges. Corrected the TCH
from 22ns to 2.2ns and TSADV from 20ns to 2.0ns.
Pg. 1-25
Changed datasheet from Prelininary to final release.
Pg. 15
Added I temp to 150MHz.
Pg. 16
Corrected typo from 22 to 2.2.
Pg. 1,2,5,6, Removed JTAG functionality for current die revision.
7,8
Pg. 7
Corrected pin configuration on the x36, 119BGA. Switched pins I/O0 and I/OP1.
Pg. 5,6
Updated temperature TA note.
Pg. 7
Updated pin configuration for the 119BGA-reordered I/O signals on P7,N6,L6, K7,H6, G7, F6, E7, D6
(512K x18).
Pg. 25
Added "restricted hazardous substance device" to ordering information.
Pg. 25
Added Z generation die step to data sheet ordering information.
Pg. 25
Updated the ordering information by removing the "IDT" notation.
Pg. 1,14,15
Pg. 5,6
Pg. 5,6
Pg. 7
Pg. 21
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6.42
26
for Tech Support:
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