APTGL30X120T3G 3 Phase bridge Trench + Field Stop IGBT4 Power Module 15 VCES = 1200V IC = 30A @ Tc = 80°C Application • Motor control 31 16 23 19 29 14 25 20 30 18 11 10 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Low tail current - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C 50A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W March, 2009 IC Max ratings 1200 45 30 50 ±20 170 RBSOA Parameter Collector - Emitter Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL30X120T3G – Rev 0 Symbol VCES APTGL30X120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 150°C VGE = VCE , IC = 0.8mA VGE = 20V, VCE = 0V Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=25A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 25A RG = 20Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 25A RG = 20Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 25A TJ = 25°C RG = 20Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 1430 115 85 pF 0.2 µC 130 20 300 ns 45 150 35 350 80 2 3 1.5 2.2 ns mJ mJ 100 A Reverse diode ratings and characteristics IRM Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 VR=1200V IF = 25A IF = 50A IF = 25A IF = 25A VR = 667V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 150°C Tc = 80°C Unit 100 500 Tj = 125°C Tj = 25°C 25 2.6 3.2 1.8 320 Tj = 125°C Tj = 25°C Tj = 125°C 360 480 1800 µA A 3.1 V March, 2009 VRRM Test Conditions Maximum Peak Repetitive Reverse Voltage ns nC 2-5 APTGL30X120T3G – Rev 0 Symbol Characteristic APTGL30X120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.9 1.4 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGL30X120T3G – Rev 0 28 17 1 March, 2009 SP3 Package outline (dimensions in mm) APTGL30X120T3G Typical Performance Curve Output Characteristics (VGE=15V) 50 Output Characteristics 50 TJ = 150°C 40 TJ=25°C 30 VGE=19V 30 TJ=150°C IC (A) IC (A) 40 20 10 VGE=15V 20 VGE=9V 10 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 50 VCE = 600V VGE = 15V RG = 20 Ω TJ = 150°C 30 6 E (mJ) IC (A) TJ=25°C 8 20 4 Eon 4 2 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 6 60 VCE = 600V VGE =15V IC = 25A TJ = 150°C 4 50 Eon 40 3 IC (A) 5 E (mJ) 3 Eoff TJ=150°C 10 2 VCE (V) Energy losses vs Collector Current 10 40 1 Eoff 30 2 20 1 10 0 VGE=15V TJ=150°C RG=20 Ω 0 0 20 40 60 Gate Resistance (ohms) 80 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 March, 2009 0.8 0.7 0.6 0.5 0.4 0.2 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL30X120T3G – Rev 0 Thermal Impedance (°C/W) 1 APTGL30X120T3G Forward Characteristic of diode 60 VCE=600V D=50% RG=20 Ω TJ=150°C Tc=75°C 60 TJ=125°C 50 40 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 30 TJ=25°C 20 20 Hard switching 10 0 0 0 10 20 30 40 0.0 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 1.2 1 0.8 0.6 Diode 0.9 0.7 0.5 0.3 0.4 0.2 0 0.00001 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL30X120T3G – Rev 0 March, 2009 rectangular Pulse Duration (Seconds)