Micronas HAL575SF-K Two-wire hall-effect sensor family Datasheet

Hardware
Documentation
D at a S h e e t
®
HAL 573...HAL 576, 579
HAL 581...HAL 584
Two-Wire Hall-Effect Sensor Family
Edition Dec. 22, 2008
DSH000145_003EN
HAL57x, HAL58x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL57x, HAL58x
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
6
6
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
7
2.
Functional Description
8
8
13
13
13
13
14
15
16
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
19
19
21
23
25
27
29
31
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.7.
Type Descriptions
HAL573
HAL574
HAL575
HAL576
HAL579
HAL581
HAL584
33
33
33
33
34
34
5.
5.1.
5.2.
5.3.
5.4.
5.5.
Application Notes
Application Circuit
Extended Operating Conditions
Start-Up Behavior
Ambient Temperature
EMC and ESD
36
6.
Data Sheet History
Micronas
Dec. 22, 2008; DSH000145_003EN
3
HAL57x, HAL58x
DATA SHEET
Two-Wire Hall-Effect Sensor Family
in CMOS technology
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
This sensor family consists of different two-wire Hall
switches produced in CMOS technology. All sensors
change the current consumption depending on the
external magnetic field and require only two wires
between sensor and evaluation circuit. The sensors of
this family differ in the magnetic switching behavior
and switching points.
The sensors include a temperature-compensated Hall
plate with active offset compensation, a comparator,
and a current source. The comparator compares the
actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points).
Accordingly, the current source is switched on (high
current consumption) or off (low current consumption).
The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters
are robust against mechanical stress effects.
The sensors are designed for industrial and automotive applications and operate with supply voltages from
3.75 V to 24 V in the junction temperature range from
−40 °C up to 140 °C. All sensors are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features
1.2. Family Overview
Type
Switching
Behavior
Sensitivity
see
Page
573
unipolar
low
19
574
unipolar
medium
21
575
latching
medium
23
576
unipolar
medium
25
579
latching
medium
27
581
unipolar
inverted
medium
29
584
unipolar
inverted
medium
31
Unipolar Switching Sensors:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field
is removed. The sensor does not respond to the magnetic north pole on the branded side.
– current output for two-wire applications
Current consumption
– low current consumption: 5 mA...6.9 mA
IDDhigh
– high current consumption: 12 mA...17 mA
– junction temperature range from −40 °C up to
140 °C.
BHYS
IDDlow
– operates from 3.75 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– switching offset compensation at typically 145 kHz
0
BOFF
BON
B
Fig. 1–1: Unipolar Switching Sensor
– overvoltage and reverse-voltage protection
– magnetic characteristics are robust against
mechanical stress effects
– constant magnetic switching points over a wide supply voltage range
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HAL57x, HAL58x
DATA SHEET
Unipolar Inverted Switching Sensors:
1.3. Marking Code
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field
is removed. The sensor does not respond to the magnetic north pole on the branded side.
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
Type
Current consumption
IDDhigh
BHYS
IDDlow
0
BON
BOFF
Temperature Range
K
E
HAL573
573K
573E
HAL574
574K
574E
HAL575
575K
575E
HAL576
576K
576E
HAL579
579K
579E
HAL581
581K
581E
HAL584
584K
584E
B
Fig. 1–2: Unipolar Inverted Switching Sensor
Latching Sensor:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low consumption with the magnetic
north pole on the branded side. The current consumption does not change if the magnetic field is removed.
For changing the current consumption, the opposite
magnetic field polarity must be applied.
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
Current consumption
IDDhigh
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction temperature. Please refer to Section 5.4. on page 34 for
details.
BHYS
IDDlow
BOFF
0
BON
B
Fig. 1–3: Latching Sensor
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type: 57x or 58x
Example: HAL581UA-E
→ Type: 581
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +100 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
Solderability
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1 VDD
x
2,4
GND
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
Fig. 1–4: Pin configuration
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HAL57x, HAL58x
DATA SHEET
2. Functional Description
HAL57x, HAL58x
The HAL57x, HAL58x two-wire sensors are monolithic
integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the
biased Hall plate forces a Hall voltage proportional to
this field. The Hall voltage is compared with the actual
threshold level in the comparator. The temperaturedependent bias increases the supply voltage of the
Hall plates and adjusts the switching points to the
decreasing induction of magnets at higher temperatures.
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Comparator
Current
Source
Switch
Clock
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source
is switched off and the current consumption is caused
only by the current through the Hall sensor. In the high
current consumption state, the current source is
switched on and the current consumption is caused by
the current through the Hall sensor and the current
source. The built-in hysteresis eliminates oscillation
and provides switching behavior of the output signal
without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced
through the Hall plate in a different direction, and the
Hall voltage is measured. At the end of the two
phases, the Hall voltages are averaged and thereby
the offset voltages are eliminated. The average value
is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from
crossing the magnetic switching level to switching of
the current level can vary between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
VDD-pin together with external series resistors.
Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external protection
diode is needed for reverse voltages ranging from 0 V
to −15 V.
GND
2, x
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
Fig. 2–1: HAL57x, HAL58x block diagram
fosc
t
B
B OFF
B ON
t
IDD
IDDhigh
IDDlow
t
IDD
1/fosc = 6.9 μs
tf
t
Fig. 2–2: Timing diagram (example: HAL581)
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Weight approximately 0.034 g
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HAL57x, HAL58x
DATA SHEET
Fig. 3–2:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
Fig. 3–3:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
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HAL57x, HAL58x
DATA SHEET
Fig. 3–4:
TO92UA-2: Dimensions ammopack inline, not spread
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
Fig. 3–5:
TO92UA-1: Dimensions ammopack inline, spread
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HAL57x, HAL58x
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
y
SOT89B-1
TO92UA-1/-2
0.85 mm nominal
0.9 mm nominal
A4
0.3 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
VDD
Supply Voltage
1
−151)2)
282)
V
TJ
Junction Temperature Range
−40
170
°C
1)
2)
−18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor)
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
VDD
Supply Voltage
1
TA
ton
1)
Typ.
Max.
Unit
3.75
24
V
Ambient Temperature for
Continuous Operation
−40
851)
°C
Supply Time for Pulsed Mode
−
−
μs
30
when using the”K” type and VDD ≤16 V
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the
supply voltage on and off (pulse mode). Please refer to Section 5.4. on page 34 for details.
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HAL57x, HAL58x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
IDDlow
Low Current Consumption
over Temperature Range
1
5
6
6.9
mA
4.5
6
6.9
mA
Test Conditions
for HAL579 only
IDDhigh
High Current Consumption
over Temperature Range
1
12
14.3
17
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
fosc
Internal Oscillator Chopper
Frequency over Temperature
Range
−
−
145
−
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
−
30
−
µs
1)
tr
Output Rise Time
1
−
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
tf
Output Fall Time
1
−
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
SOT89B Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
2092)
K/W
Rthjc
Junction to Case
−
−
−
562)
K/W
Rthjs
Junction to Solder Point
−
−
−
823)
K/W
Junction to Ambient
−
−
−
2462)
K/W
Rthjc
Junction to Case
−
−
−
70
Rthjs
Junction to Solder Point
−
−
−
1273)
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
TO92UA Package
Thermal Resistance
Rthja
1)
2)
3)
2)
K/W
K/W
B > BON + 2 mT or B < BOFF − 2 mT for HAL57x, B > BOFF + 2 mT or B < BON − 2 mT for HAL58x
Measured with a 1s0p board
Measured with a 1s1p board
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommend pad size SOT89B-1
Dimensions in mm
Micronas
Dec. 22, 2008; DSH000145_003EN
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HAL57x, HAL58x
DATA SHEET
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Switching Type
Parameter
On point BON
TJ
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL573
−40 °C
37
44.2
49
34
42
48
0.5
2.2
5
mT
unipolar
25 °C
37
43.5
49
34
41.5
47
0.5
2
5
mT
100 °C
34
40
46
32
38
44
0.5
2
5
mT
140 °C
34
38
46
32
36
44
0.2
2
5
mT
HAL574
−40 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
mT
unipolar
25 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
mT
100 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
mT
140 °C
5
8.8
12.5
3.5
7.5
11.5
0.2
1.9
3.5
mT
HAL575
−40 °C
0.5
4
8
-8
-4
-0.5
5
8
11
mT
latching
25 °C
0.5
4
8
-8
-4
-0.5
5
8
11
mT
100 °C
0.5
4
8
-8
-4
−0.5
5
8
11
mT
140 °C
0.5
4
8
-8
-4
-0.5
5
8
11
mT
HAL576
−40 °C
3.3
5.7
8.2
1.8
4.2
6.7
0.3
1.9
3.5
mT
unipolar
25 °C
3.3
5.7
8.2
1.8
4.2
6.7
0.3
1.9
3.5
mT
100 °C
2.8
5.5
8.3
1.3
4
6.8
0.3
1.9
3.5
mT
140 °C
2
5.2
8.3
0.3
3.7
7
0.3
1.9
3.5
mT
HAL579
−40 °C
5.5
12.0
18.5
-18.5
-12.0
-5.5
16.0
22.0
28.0
mT
latching
25 °C
5.5
12.0
18.5
-18.5
-12.0
-5.5
16.0
22.0
28.0
mT
100 °C
5.5
12.0
18.5
-18.5
-12.0
-5.5
16.0
22.0
28.0
mT
140 °C
5.5
12.0
18.5
-18.5
-12.0
-5.5
16.0
22.0
28.0
mT
HAL581
−40 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
mT
unipolar
25 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
mT
inverted
100 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
mT
140 °C
6.5
10.4
14.3
8
12
16
0.5
2
3.5
mT
HAL584
−40 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
mT
unipolar
25 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
mT
inverted
100 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
mT
140 °C
4.5
8
11.5
5.5
9
12.5
0.2
1.9
3.5
mT
Note: For detailed descriptions of the individual types, see pages 19 and following.
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Micronas
HAL57x, HAL58x
DATA SHEET
mA
25
mA
20
HAL 57x, HAL 58x
HAL 57x, HAL 58x
18
20
IDD
IDD
IDDhigh
15
IDDhigh
16
14
10
12
5
IDDlow
VDD = 3.75 V
VDD = 12 V
10
0
VDD = 24 V
8
−5
6
−10
IDDlow
TA = −40 °C
4
TA = 25 °C
−15
2
TA = 100 °C
−20
−15 −10 −5
0
0
−50
10 15 20 25 30 V
5
0
50
100
VDD
200 °C
TA
Fig. 3–7: Typical supply current
versus supply voltage
mA
20
150
Fig. 3–9: Typical current consumption
versus ambient temperature
kHz
200
HAL 57x, HAL 58x
HAL 57x, HAL 58x
TA = −40 °C
18
IDD
180
TA = 25 °C
TA = 100 °C
16
fosc
IDDhigh
160
14
140
12
120
10
100
8
80
6
60
VDD = 24 V
40
2
20
0
1
2
3
4
5
6V
0
−50
VDD
Fig. 3–8: Typical supply current
versus supply voltage
Micronas
VDD = 12 V
IDDlow
4
0
VDD = 3.75 V
0
50
100
150
200 °C
TA
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
Dec. 22, 2008; DSH000145_003EN
17
HAL57x, HAL58x
kHz
200
DATA SHEET
kHz
200
HAL 57x, HAL 58x
180
180
fosc
fosc
160
160
140
140
120
120
TA = −40 °C
100
100
TA = −40 °C
TA = 25 °C
80
80
TA = 100°C
60
60
40
40
20
20
0
TA = 25 °C
TA = 100°C
TA = 140°C
0
0
5
10
15
20
25
30 V
3
4
5
6
7
8 V
VDD
VDD
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
18
HAL 57x, HAL 58x
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL573
DATA SHEET
4. Type Descriptions
Applications
4.1. HAL573
The HAL573 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position such as:
The HAL573 is a unipolar switching sensor with low
sensitivity (see Fig. 4–1).
– solid state switches,
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Current consumption
IDDhigh
BHYS
Magnetic Features:
IDDlow
– switching type: unipolar
– low sensitivity
0
BOFF
– typical BON: 43.5 mT at room temperature
BON
B
Fig. 4–1: Definition of magnetic switching points for
the HAL573
– typical BOFF: 41.5 mT at room temperature
– typical temperature coefficient of magnetic switching
points is −1100 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C° to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point BON
TJ
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
37
44.2
49
34
42
48
0.5
2.2
5
44.6
mT
25 °C
37
43.5
49
34
41.5
47
0.5
2
5
42.5
mT
100 °C
34
40
46
32
38
44
0.5
2
5
39
mT
140 °C
34
38
46
32
36
44
0.2
2
5
39
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
19
HAL573
DATA SHEET
mT
50
BON
BOFF
mT
60
HAL 573
BON
45
BOFF
BON
BOFF
40
BON
BON
BOFF
HAL 573
55
50
BONmax
45
BOFFmax
BON
BOFF
BOFF
35
TA = −40 °C
BONtyp
BONmin
BOFFmin
TA = 100 °C
30
TA = 125 °C
5
10
15
20
25
30 V
0
50
100
150
200 °C
TA, TJ
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
mT
50
VDD = 3.75 V
VDD = 12 V...24 V
25
−50
VDD
BON
BOFF
BOFFtyp
35
TA = 25 °C
30
25
0
40
HAL 573
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
45
40
35
TA = −40 °C
TA = 25 °C
30
TA = 100 °C
TA = 125 °C
25
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Magnetic switching points
versus supply voltage
20
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL574
DATA SHEET
4.2. HAL574
Applications
The HAL574 is a medium sensitive unipolar switching
sensor (see Fig. 4–5).
The HAL574 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position such as:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– rotating speed measurement.
Current consumption
In this two-wire sensor family, the HAL584 is a sensor
with the same magnetic characteristics but with an
inverted output characteristic.
IDDhigh
BHYS
Magnetic Features:
IDDlow
– switching type: unipolar
– medium sensitivity
0
– typical BON: 9.2 mT at room temperature
BOFF
BON
B
Fig. 4–5: Definition of magnetic switching points for
the HAL574
– typical BOFF: 7.2 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
8.2
mT
25 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
8.2
mT
100 °C
5.5
9.2
12
5
7.2
11.5
0.5
2
3
8.2
mT
140 °C
5
8.8
12.5
3.5
7.5
11.5
0.2
1.9
3.5
8.2
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
21
HAL574
DATA SHEET
mT
12
mT
14
HAL 574
BON
BOFF 10
BON
BOFF
BON
HAL 574
BONmax
12
BOFFmax
10
8
BONtyp
BOFF
8
6
BOFFtyp
6
BONmin
4
4
TA = −40 °C
BOFFmin
TA = 25 °C
2
TA = 100 °C
VDD = 3.75
2
VDD = 12 V...24 V
TA = 125 °C
0
0
5
10
15
20
25
0
−50
30 V
VDD
HAL 574
BON
BOFF 10
50
100
150
200 °C
TA, TJ
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
mT
12
0
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
8
BOFF
6
TA = −40 °C
4
TA = 25 °C
TA = 100 °C
TA = 125 °C
2
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
22
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL575
DATA SHEET
4.3. HAL575
Applications
The HAL575 is a medium sensitive latching switching
sensor (see Fig. 4–9).
The HAL575 is designed for applications with both
magnetic polarities and weak magnetic amplitudes at
the sensor position such as:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low consumption with the magnetic
north pole on the branded side. The current consumption does not change if the magnetic field is removed.
For changing the current consumption, the opposite
magnetic field polarity must be applied.
– applications with large airgap or weak magnets,
– multipole magnet applications,
– contactless solutions to replace micro switches,
– rotating speed measurement.
For correct functioning in the application, the sensor
requires both magnetic polarities on the branded side
of the package.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: latching
IDDlow
– medium sensitivity
0
BOFF
– typical BON: 4 mT at room temperature
– typical BOFF: −4 mT at room temperature
B
BON
Fig. 4–9: Definition of magnetic switching points for
the HAL575
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
0.5
4
8
−8
−4
−0.5
5
8
11
0
mT
25 °C
0.5
4
8
−8
−4
−0.5
5
8
11
0
mT
100 °C
0.5
4
8
−8
−4
−0.5
5
8
11
0
mT
140 °C
0.5
4
8
−8
−4
−0.5
5
8
11
0
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
23
HAL575
DATA SHEET
mT
6
mT
9
HAL 575
BONmax
BON
BON
BOFF
HAL 575
7
BON
BOFF
4
5
BONtyp
2
3
TA = −40 °C
1
TA = 25 °C
0
TA = 100 °C
BONmin
BOFFmax
−1
TA = 125 °C
−2
−3
−5
BOFF
−6
0
5
10
15
20
25
30 V
VDD
BON
BOFF
BOFFmin
0
50
100
150
200 °C
TA, TJ
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
mT
6
VDD = 24 V
−7
−9
−50
BOFFtyp
VDD = 3.75 V...12 V
−4
HAL 575
BON
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
4
2
TA = −40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
−2
−4
BOFF
−6
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
24
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL576
DATA SHEET
4.4. HAL576
Applications
The HAL576 is a medium sensitive unipolar switching
sensor (see Fig. 4–13).
The HAL576 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position such as:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– rotating speed measurement.
Current consumption
IDDhigh
Magnetic Features:
– switching type: unipolar
BHYS
– medium sensitivity
IDDlow
– typical BON: 5.7 mT at room temperature
– typical BOFF: 4.2 mT at room temperature
0
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
BON
B
Fig. 4–13: Definition of magnetic switching points for
the HAL576
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
3.3
5.7
8.2
1.8
4.2
6.7
0.3
1.9
3.5
5
mT
25 °C
3.3
5.7
8.2
1.8
4.2
6.7
0.3
1.9
3.5
5
mT
100 °C
2.8
5.5
8.3
1.3
4
6.8
0.3
1.9
3.5
5
mT
140 °C
2
5.2
8.3
0.3
3.7
7
0.3
1.9
3.5
4.5
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
25
HAL576
DATA SHEET
mT
8
mT
9
HAL 576
HAL 576
BONmax
BON
BOFF
7
BON
BOFF
BON
8
BOFFmax
7
6
6
5
BONtyp
VDD = 3.75 V
VDD = 12 V
VDD = 24 V
BOFF
5
4
4
3
TA = 25 °C
2
1
0
1
5
10
15
20
25
0
−50
30 V
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
mT
8
HAL 576
7
BOFFmin
0
50
100
150
200 °C
TA, TJ
VDD
BON
BOFF
BONmin
2
TA = 100 °C
0
BOFFtyp
3
TA = −40 °C
Fig. 4–16: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
6
5
4
BOFF
3
TA = −40 °C
2
TA = 25 °C
TA = 100 °C
1
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
26
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL579
DATA SHEET
4.5. HAL579
Applications
The HAL579 is a unipolar switching sensor with low
sensitivity (see Fig. 4–17).
The HAL579 is designed for applications with both
magnetic polarities and weak magnetic amplitudes at
the sensor position such as:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low consumption with the magnetic
north pole on the branded side. The current consumption does not change if the magnetic field is removed.
For changing the current consumption, the opposite
magnetic field polarity must be applied.
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires both magnetic polarities on the branded side
of the package.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: latching
IDDlow
– medium sensitivity
0
BOFF
– typical BON: 12.0 mT at room temperature
– typical BOFF: -12.0 mT at room temperature
B
BON
Fig. 4–17: Definition of magnetic switching points for
the HAL579
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
5.5
12.0
18.5
−18.5
−12.0
−5.5
16.0
22.0
28.0
−7.0
0.0
7.0
mT
25 °C
5.5
12.0
18.5
−18.5
−12.0
−5.5
16.0
22.0
28.0
−7.0
0.0
7.0
mT
100 °C
5.5
12.0
18.5
−18.5
−12.0
−5.5
16.0
22.0
28.0
−7.0
0.0
7.0
mT
140 °C
5.5
12.0
18.5
−18.5
−12.0
−5.5
16.0
22.0
28.0
−7.0
0.0
7.0
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
27
HAL579
DATA SHEET
mT
14
HAL 579
BON
BON 10
BOFF
BON
BOFF
mT
20
HAL 579
12
BONtyp
BONmax
6
BONmin
4
TA = −40 °C
2
VDD = 24 V
TA = 25 °C
VDD = 3.75 V...12 V
TA = 125 °C
−2
−4
BOFFmax
−6
−12
−10
−14
BOFFtyp
BOFF
0
5
10
15
20
25
30 V
−20
−50
VDD
50
100
150
200 °C
TA, TJ
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
mT
14
BOFFmin
0
HAL 579
Fig. 4–20: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature” the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BON
BON 10
BOFF
6
TA = −40 °C
2
TA = 25 °C
TA = 125 °C
−2
−6
−10
−14
3.0
BOFF
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–19: Magnetic switching points
versus supply voltage
28
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL581
DATA SHEET
4.6. HAL581
Applications
The HAL581 is a medium sensitive unipolar switching
sensor with an inverted output (see Fig. 4–21).
The HAL581 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– position and end point detection, and
– rotating speed measurement.
Current consumption
Magnetic Features:
– switching type: unipolar inverted
IDDhigh
BHYS
– medium sensitivity
– typical BON: 10 mT at room temperature
IDDlow
– typical BOFF: 12 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
0
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BON
BOFF
B
Fig. 4–21: Definition of magnetic switching points for
the HAL581
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
11
mT
25 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
11
mT
100 °C
6.5
10
13.8
8
12
15.5
0.5
2
3.5
11
mT
140 °C
6.5
10.4
14.3
8
12
16
0.5
2
3.5
11
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
29
HAL581
DATA SHEET
mT
14
mT
18
HAL 581
BOFF
BON 13
BOFF
BON
BOFF
12
HAL 581
16
BOFFmax
14
BONmax
12
BOFFtyp
11
BON
BONtyp
10
10
BOFFmin
8
9
TA = −40 °C
TA = 25 °C
8
TA = 100 °C
0
5
10
15
20
0
−50
30 V
VDD
0
50
100
150 °C
TA, TJ
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
HAL 581
BON 13
BOFF
VDD = 12 V...24 V
2
25
mT
14
VDD = 3.75 V
4
TA = 125 °C
7
6
BONmin
6
Fig. 4–24: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BOFF
12
11
10
BON
9
TA = −40 °C
8
TA = 25 °C
TA = 100 °C
7
6
3.0
TA = 125 °C
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
30
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL584
DATA SHEET
4.7. HAL584
Applications
The HAL584 is a medium sensitive unipolar switching
sensor with an inverted output (see Fig. 4–25).
The HAL584 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– position and end point detection, and
– rotating speed measurement.
In this two-wire sensor family, the HAL574 is a sensor
with the same magnetic characteristics but with a normal output characteristic.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: unipolar inverted
IDDlow
– medium sensitivity
0
– typical BON: 7.2 mT at room temperature
– typical BOFF: 9.2 mT at room temperature
BON
BOFF
B
Fig. 4–25: Definition of magnetic switching points for
the HAL584
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
8.2
mT
25 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
8.2
mT
100 °C
5
7.2
11.5
5.5
9.2
12
0.5
2
3.0
8.2
mT
140 °C
4.5
8
11.5
5.5
9
12.5
0.2
1.9
3.5
8.2
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
31
HAL584
DATA SHEET
mT
12
mT
14
HAL 584
BON
BOFF
BOFF
BON
BOFF 10
HAL 584
BOFFmax
12
BONmax
10
8
BOFFtyp
8
BON
BONtyp
6
6
BOFFmin
TA = −40 °C
4
TA = 25 °C
BONmin
4
TA = 100 °C
2
TA = 125 °C
0
0
5
10
15
20
25
0
−50
30 V
VDD
HAL 584
BON
BOFF 10
VDD = 24 V
0
50
100
150 °C
TA, TJ
Fig. 4–26: Typ. magnetic switching points
versus supply voltage
mT
12
VDD = 3.75 V...12 V
2
Fig. 4–28: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
BOFF
8
BON
6
TA = −40 °C
4
TA = 25 °C
TA = 100 °C
2
0
3.0
TA = 125 °C
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–27: Typ. magnetic switching points
versus supply voltage
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Micronas
HAL57x, HAL58x
DATA SHEET
5. Application Notes
5.2. Extended Operating Conditions
5.1. Application Circuit
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14).
Fig. 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be
calculated as:
R Lmax
Note: The functionality of the sensor below 3.75 V is
not tested on a regular base. For special test
conditions, please contact Micronas.
V SUPmin – 3.75 V
= ------------------------------------------17 mA
1 VDD
VSUP
5.3. Start-Up Behavior
VSIG
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 15). During the initialization time, the current consumption is not defined and can toggle between low
and high.
RL
2 or x GND
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
HAL57x
Fig. 5–1: Application circuit 1
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging
from 10 Ω to 30 Ω) and a capacitor both placed close
to the sensor are recommended (see Fig. 5–2). In this
case, the maximum RL can be calculated as:
R Lmax
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current
consumption will be low if B is below BOFF.
HAL58x
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and
high if B < BON.
VSUPmin – 3.75 V
= ------------------------------------------- – RV
17 mA
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be
either low or high after applying VDD. In order to
achieve a defined current consumption, the
applied magnetic field must be above BON,
respectively, below BOFF.
1 VDD
VSUP
Typically, the sensors operate with supply voltages
above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification.
RV
VSIG
4.7 nF
RL
2 or x GND
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
Fig. 5–2: Application circuit 2
Micronas
Dec. 22, 2008; DSH000145_003EN
33
HAL57x, HAL58x
DATA SHEET
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temperature TA).
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
T J = T A + ΔT
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × VDD × R th
Please contact Micronas for detailed information and
first EMC and ESD results.
RV1
RV2
100 Ω
30 Ω
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
1 VDD
VEMC
T Amax = T Jmax – ΔT
4.7 nF
2, x GND
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from 30
μs to 1 ms, the following equation can be used:
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
Fig. 5–3: Recommded EMC test circuit
ton
T = IDD × VDD × R th × -------------------t off + ton
34
Dec. 22, 2008; DSH000145_003EN
Micronas
HAL57x, HAL58x
DATA SHEET
intentionally left vacant
Micronas
Dec. 22, 2008; DSH000145_003EN
35
HAL57x, HAL58x
DATA SHEET
6. Data Sheet History
1. Data sheet: “HAL574...HAL576, 581, 584 Two-wire
Hall Effect Sensor Family”, April 11, 2002 6251-5381DS. First release of the data sheet. Major changes:
– “K” temperature range specified
– HAL571 and HAL573 deleted
– HAL576 added
2. Data Sheet: “HAL573...HAL576, HAL581...HAL584
Two-Wire Hall Effect Sensor Family”, Nov. 27, 2003,
6251-538-2DS. Second release of the data sheet.
Major changes:
– specification for HAL573 added
– new package diagrams for SOT89B-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
3. Data Sheet: “HAL573...HAL576, HAL579
HAL581...HAL584 Two-Wire Hall-Effect Sensor
Family”, Nov. 5, 2007, DSH000145_001EN. Third
release of the data sheet. Major changes:
– specification for HAL579 added
– specification for HAL573 updated
– package diagrams for SOT89B-1, TO92UA-1, and
TO92UA-2 updated
4. Data Sheet: “HAL573...HAL576, HAL579
HAL581...HAL584 Two-Wire Hall-Effect Sensor
Family”, March 7, 2008, DSH000145_002EN.
Fourth release of the data sheet. Minor changes:
– specification for HAL579 updated
– ammopack diagrams for TO92UA-1 and TO92UA-2
updated
5. Data Sheet: “HAL573...HAL576, HAL579
HAL581...HAL584 Two-Wire Hall-Effect Sensor
Family”, Dec. 22, 2008, DSH000145_003EN. Fifth
release of the data sheet. Major changes:
– Section 1.6. Solderability and Welding updated
– Section 3.5. Recommended Operating Conditions
updated
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
36
Dec. 22, 2008; DSH000145_003EN
Micronas
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