Hardware Documentation D at a S h e e t ® HAL 573...HAL 576, 579 HAL 581...HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET Contents Page Section Title 4 4 4 5 5 6 6 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding 7 2. Functional Description 8 8 13 13 13 13 14 15 16 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 19 19 21 23 25 27 29 31 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. Type Descriptions HAL573 HAL574 HAL575 HAL576 HAL579 HAL581 HAL584 33 33 33 33 34 34 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Application Circuit Extended Operating Conditions Start-Up Behavior Ambient Temperature EMC and ESD 36 6. Data Sheet History Micronas Dec. 22, 2008; DSH000145_003EN 3 HAL57x, HAL58x DATA SHEET Two-Wire Hall-Effect Sensor Family in CMOS technology Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from −40 °C up to 140 °C. All sensors are available in the SMD package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features 1.2. Family Overview Type Switching Behavior Sensitivity see Page 573 unipolar low 19 574 unipolar medium 21 575 latching medium 23 576 unipolar medium 25 579 latching medium 27 581 unipolar inverted medium 29 584 unipolar inverted medium 31 Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. – current output for two-wire applications Current consumption – low current consumption: 5 mA...6.9 mA IDDhigh – high current consumption: 12 mA...17 mA – junction temperature range from −40 °C up to 140 °C. BHYS IDDlow – operates from 3.75 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – switching offset compensation at typically 145 kHz 0 BOFF BON B Fig. 1–1: Unipolar Switching Sensor – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechanical stress effects – constant magnetic switching points over a wide supply voltage range 4 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET Unipolar Inverted Switching Sensors: 1.3. Marking Code The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Current consumption IDDhigh BHYS IDDlow 0 BON BOFF Temperature Range K E HAL573 573K 573E HAL574 574K 574E HAL575 575K 575E HAL576 576K 576E HAL579 579K 579E HAL581 581K 581E HAL584 584K 584E B Fig. 1–2: Unipolar Inverted Switching Sensor Latching Sensor: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C Current consumption IDDhigh Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to Section 5.4. on page 34 for details. BHYS IDDlow BOFF 0 BON B Fig. 1–3: Latching Sensor Micronas Dec. 22, 2008; DSH000145_003EN 5 HAL57x, HAL58x DATA SHEET 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type: 57x or 58x Example: HAL581UA-E → Type: 581 → Package: TO92UA → Temperature Range: TJ = −40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.6. Solderability and Welding Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD x 2,4 GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 1–4: Pin configuration 6 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET 2. Functional Description HAL57x, HAL58x The HAL57x, HAL58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperaturedependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Comparator Current Source Switch Clock If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external protection diode is needed for reverse voltages ranging from 0 V to −15 V. GND 2, x x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 2–1: HAL57x, HAL58x block diagram fosc t B B OFF B ON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 μs tf t Fig. 2–2: Timing diagram (example: HAL581) Micronas Dec. 22, 2008; DSH000145_003EN 7 HAL57x, HAL58x DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.034 g 8 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET Fig. 3–2: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g Micronas Dec. 22, 2008; DSH000145_003EN 9 HAL57x, HAL58x DATA SHEET Fig. 3–3: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g 10 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET Fig. 3–4: TO92UA-2: Dimensions ammopack inline, not spread Micronas Dec. 22, 2008; DSH000145_003EN 11 HAL57x, HAL58x DATA SHEET Fig. 3–5: TO92UA-1: Dimensions ammopack inline, spread 12 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas y SOT89B-1 TO92UA-1/-2 0.85 mm nominal 0.9 mm nominal A4 0.3 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 −151)2) 282) V TJ Junction Temperature Range −40 170 °C 1) 2) −18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor) as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Dec. 22, 2008; DSH000145_003EN 13 HAL57x, HAL58x DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. VDD Supply Voltage 1 TA ton 1) Typ. Max. Unit 3.75 24 V Ambient Temperature for Continuous Operation −40 851) °C Supply Time for Pulsed Mode − − μs 30 when using the”K” type and VDD ≤16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to Section 5.4. on page 34 for details. 14 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol Parameter Pin No. Min. Typ. Max. Unit IDDlow Low Current Consumption over Temperature Range 1 5 6 6.9 mA 4.5 6 6.9 mA Test Conditions for HAL579 only IDDhigh High Current Consumption over Temperature Range 1 12 14.3 17 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V fosc Internal Oscillator Chopper Frequency over Temperature Range − − 145 − kHz ten(O) Enable Time of Output after Setting of VDD 1 − 30 − µs 1) tr Output Rise Time 1 − 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω tf Output Fall Time 1 − 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω IDD = 25 mA, TJ = 25 °C, t = 20 ms SOT89B Package Thermal Resistance Rthja Junction to Ambient − − − 2092) K/W Rthjc Junction to Case − − − 562) K/W Rthjs Junction to Solder Point − − − 823) K/W Junction to Ambient − − − 2462) K/W Rthjc Junction to Case − − − 70 Rthjs Junction to Solder Point − − − 1273) 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–6) TO92UA Package Thermal Resistance Rthja 1) 2) 3) 2) K/W K/W B > BON + 2 mT or B < BOFF − 2 mT for HAL57x, B > BOFF + 2 mT or B < BON − 2 mT for HAL58x Measured with a 1s0p board Measured with a 1s1p board 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommend pad size SOT89B-1 Dimensions in mm Micronas Dec. 22, 2008; DSH000145_003EN 15 HAL57x, HAL58x DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for TJ = 25 °C and VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type Parameter On point BON TJ Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL573 −40 °C 37 44.2 49 34 42 48 0.5 2.2 5 mT unipolar 25 °C 37 43.5 49 34 41.5 47 0.5 2 5 mT 100 °C 34 40 46 32 38 44 0.5 2 5 mT 140 °C 34 38 46 32 36 44 0.2 2 5 mT HAL574 −40 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT unipolar 25 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT 100 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT 140 °C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 mT HAL575 −40 °C 0.5 4 8 -8 -4 -0.5 5 8 11 mT latching 25 °C 0.5 4 8 -8 -4 -0.5 5 8 11 mT 100 °C 0.5 4 8 -8 -4 −0.5 5 8 11 mT 140 °C 0.5 4 8 -8 -4 -0.5 5 8 11 mT HAL576 −40 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT unipolar 25 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT 100 °C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 mT 140 °C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 mT HAL579 −40 °C 5.5 12.0 18.5 -18.5 -12.0 -5.5 16.0 22.0 28.0 mT latching 25 °C 5.5 12.0 18.5 -18.5 -12.0 -5.5 16.0 22.0 28.0 mT 100 °C 5.5 12.0 18.5 -18.5 -12.0 -5.5 16.0 22.0 28.0 mT 140 °C 5.5 12.0 18.5 -18.5 -12.0 -5.5 16.0 22.0 28.0 mT HAL581 −40 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT unipolar 25 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT inverted 100 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT 140 °C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 mT HAL584 −40 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT unipolar 25 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT inverted 100 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT 140 °C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 mT Note: For detailed descriptions of the individual types, see pages 19 and following. 16 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET mA 25 mA 20 HAL 57x, HAL 58x HAL 57x, HAL 58x 18 20 IDD IDD IDDhigh 15 IDDhigh 16 14 10 12 5 IDDlow VDD = 3.75 V VDD = 12 V 10 0 VDD = 24 V 8 −5 6 −10 IDDlow TA = −40 °C 4 TA = 25 °C −15 2 TA = 100 °C −20 −15 −10 −5 0 0 −50 10 15 20 25 30 V 5 0 50 100 VDD 200 °C TA Fig. 3–7: Typical supply current versus supply voltage mA 20 150 Fig. 3–9: Typical current consumption versus ambient temperature kHz 200 HAL 57x, HAL 58x HAL 57x, HAL 58x TA = −40 °C 18 IDD 180 TA = 25 °C TA = 100 °C 16 fosc IDDhigh 160 14 140 12 120 10 100 8 80 6 60 VDD = 24 V 40 2 20 0 1 2 3 4 5 6V 0 −50 VDD Fig. 3–8: Typical supply current versus supply voltage Micronas VDD = 12 V IDDlow 4 0 VDD = 3.75 V 0 50 100 150 200 °C TA Fig. 3–10: Typ. internal chopper frequency versus ambient temperature Dec. 22, 2008; DSH000145_003EN 17 HAL57x, HAL58x kHz 200 DATA SHEET kHz 200 HAL 57x, HAL 58x 180 180 fosc fosc 160 160 140 140 120 120 TA = −40 °C 100 100 TA = −40 °C TA = 25 °C 80 80 TA = 100°C 60 60 40 40 20 20 0 TA = 25 °C TA = 100°C TA = 140°C 0 0 5 10 15 20 25 30 V 3 4 5 6 7 8 V VDD VDD Fig. 3–11: Typ. internal chopper frequency versus supply voltage 18 HAL 57x, HAL 58x Fig. 3–12: Typ. internal chopper frequency versus supply voltage Dec. 22, 2008; DSH000145_003EN Micronas HAL573 DATA SHEET 4. Type Descriptions Applications 4.1. HAL573 The HAL573 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The HAL573 is a unipolar switching sensor with low sensitivity (see Fig. 4–1). – solid state switches, The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption IDDhigh BHYS Magnetic Features: IDDlow – switching type: unipolar – low sensitivity 0 BOFF – typical BON: 43.5 mT at room temperature BON B Fig. 4–1: Definition of magnetic switching points for the HAL573 – typical BOFF: 41.5 mT at room temperature – typical temperature coefficient of magnetic switching points is −1100 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C° to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point BON TJ Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 37 44.2 49 34 42 48 0.5 2.2 5 44.6 mT 25 °C 37 43.5 49 34 41.5 47 0.5 2 5 42.5 mT 100 °C 34 40 46 32 38 44 0.5 2 5 39 mT 140 °C 34 38 46 32 36 44 0.2 2 5 39 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 19 HAL573 DATA SHEET mT 50 BON BOFF mT 60 HAL 573 BON 45 BOFF BON BOFF 40 BON BON BOFF HAL 573 55 50 BONmax 45 BOFFmax BON BOFF BOFF 35 TA = −40 °C BONtyp BONmin BOFFmin TA = 100 °C 30 TA = 125 °C 5 10 15 20 25 30 V 0 50 100 150 200 °C TA, TJ Fig. 4–2: Typ. magnetic switching points versus supply voltage mT 50 VDD = 3.75 V VDD = 12 V...24 V 25 −50 VDD BON BOFF BOFFtyp 35 TA = 25 °C 30 25 0 40 HAL 573 Fig. 4–4: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature” the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 45 40 35 TA = −40 °C TA = 25 °C 30 TA = 100 °C TA = 125 °C 25 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–3: Magnetic switching points versus supply voltage 20 Dec. 22, 2008; DSH000145_003EN Micronas HAL574 DATA SHEET 4.2. HAL574 Applications The HAL574 is a medium sensitive unipolar switching sensor (see Fig. 4–5). The HAL574 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – rotating speed measurement. Current consumption In this two-wire sensor family, the HAL584 is a sensor with the same magnetic characteristics but with an inverted output characteristic. IDDhigh BHYS Magnetic Features: IDDlow – switching type: unipolar – medium sensitivity 0 – typical BON: 9.2 mT at room temperature BOFF BON B Fig. 4–5: Definition of magnetic switching points for the HAL574 – typical BOFF: 7.2 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 25 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 100 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 140 °C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 8.2 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 21 HAL574 DATA SHEET mT 12 mT 14 HAL 574 BON BOFF 10 BON BOFF BON HAL 574 BONmax 12 BOFFmax 10 8 BONtyp BOFF 8 6 BOFFtyp 6 BONmin 4 4 TA = −40 °C BOFFmin TA = 25 °C 2 TA = 100 °C VDD = 3.75 2 VDD = 12 V...24 V TA = 125 °C 0 0 5 10 15 20 25 0 −50 30 V VDD HAL 574 BON BOFF 10 50 100 150 200 °C TA, TJ Fig. 4–6: Typ. magnetic switching points versus supply voltage mT 12 0 Fig. 4–8: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 8 BOFF 6 TA = −40 °C 4 TA = 25 °C TA = 100 °C TA = 125 °C 2 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–7: Typ. magnetic switching points versus supply voltage 22 Dec. 22, 2008; DSH000145_003EN Micronas HAL575 DATA SHEET 4.3. HAL575 Applications The HAL575 is a medium sensitive latching switching sensor (see Fig. 4–9). The HAL575 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. – applications with large airgap or weak magnets, – multipole magnet applications, – contactless solutions to replace micro switches, – rotating speed measurement. For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. Current consumption IDDhigh BHYS Magnetic Features: – switching type: latching IDDlow – medium sensitivity 0 BOFF – typical BON: 4 mT at room temperature – typical BOFF: −4 mT at room temperature B BON Fig. 4–9: Definition of magnetic switching points for the HAL575 – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 0.5 4 8 −8 −4 −0.5 5 8 11 0 mT 25 °C 0.5 4 8 −8 −4 −0.5 5 8 11 0 mT 100 °C 0.5 4 8 −8 −4 −0.5 5 8 11 0 mT 140 °C 0.5 4 8 −8 −4 −0.5 5 8 11 0 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 23 HAL575 DATA SHEET mT 6 mT 9 HAL 575 BONmax BON BON BOFF HAL 575 7 BON BOFF 4 5 BONtyp 2 3 TA = −40 °C 1 TA = 25 °C 0 TA = 100 °C BONmin BOFFmax −1 TA = 125 °C −2 −3 −5 BOFF −6 0 5 10 15 20 25 30 V VDD BON BOFF BOFFmin 0 50 100 150 200 °C TA, TJ Fig. 4–10: Typ. magnetic switching points versus supply voltage mT 6 VDD = 24 V −7 −9 −50 BOFFtyp VDD = 3.75 V...12 V −4 HAL 575 BON Fig. 4–12: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 4 2 TA = −40 °C TA = 25 °C 0 TA = 100 °C TA = 170 °C −2 −4 BOFF −6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–11: Typ. magnetic switching points versus supply voltage 24 Dec. 22, 2008; DSH000145_003EN Micronas HAL576 DATA SHEET 4.4. HAL576 Applications The HAL576 is a medium sensitive unipolar switching sensor (see Fig. 4–13). The HAL576 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – rotating speed measurement. Current consumption IDDhigh Magnetic Features: – switching type: unipolar BHYS – medium sensitivity IDDlow – typical BON: 5.7 mT at room temperature – typical BOFF: 4.2 mT at room temperature 0 – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF BON B Fig. 4–13: Definition of magnetic switching points for the HAL576 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT 25 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT 100 °C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 5 mT 140 °C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 4.5 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 25 HAL576 DATA SHEET mT 8 mT 9 HAL 576 HAL 576 BONmax BON BOFF 7 BON BOFF BON 8 BOFFmax 7 6 6 5 BONtyp VDD = 3.75 V VDD = 12 V VDD = 24 V BOFF 5 4 4 3 TA = 25 °C 2 1 0 1 5 10 15 20 25 0 −50 30 V Fig. 4–14: Typ. magnetic switching points versus supply voltage mT 8 HAL 576 7 BOFFmin 0 50 100 150 200 °C TA, TJ VDD BON BOFF BONmin 2 TA = 100 °C 0 BOFFtyp 3 TA = −40 °C Fig. 4–16: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 6 5 4 BOFF 3 TA = −40 °C 2 TA = 25 °C TA = 100 °C 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–15: Typ. magnetic switching points versus supply voltage 26 Dec. 22, 2008; DSH000145_003EN Micronas HAL579 DATA SHEET 4.5. HAL579 Applications The HAL579 is a unipolar switching sensor with low sensitivity (see Fig. 4–17). The HAL579 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. Current consumption IDDhigh BHYS Magnetic Features: – switching type: latching IDDlow – medium sensitivity 0 BOFF – typical BON: 12.0 mT at room temperature – typical BOFF: -12.0 mT at room temperature B BON Fig. 4–17: Definition of magnetic switching points for the HAL579 – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. −40 °C 5.5 12.0 18.5 −18.5 −12.0 −5.5 16.0 22.0 28.0 −7.0 0.0 7.0 mT 25 °C 5.5 12.0 18.5 −18.5 −12.0 −5.5 16.0 22.0 28.0 −7.0 0.0 7.0 mT 100 °C 5.5 12.0 18.5 −18.5 −12.0 −5.5 16.0 22.0 28.0 −7.0 0.0 7.0 mT 140 °C 5.5 12.0 18.5 −18.5 −12.0 −5.5 16.0 22.0 28.0 −7.0 0.0 7.0 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 27 HAL579 DATA SHEET mT 14 HAL 579 BON BON 10 BOFF BON BOFF mT 20 HAL 579 12 BONtyp BONmax 6 BONmin 4 TA = −40 °C 2 VDD = 24 V TA = 25 °C VDD = 3.75 V...12 V TA = 125 °C −2 −4 BOFFmax −6 −12 −10 −14 BOFFtyp BOFF 0 5 10 15 20 25 30 V −20 −50 VDD 50 100 150 200 °C TA, TJ Fig. 4–18: Typ. magnetic switching points versus supply voltage mT 14 BOFFmin 0 HAL 579 Fig. 4–20: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature” the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BON 10 BOFF 6 TA = −40 °C 2 TA = 25 °C TA = 125 °C −2 −6 −10 −14 3.0 BOFF 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–19: Magnetic switching points versus supply voltage 28 Dec. 22, 2008; DSH000145_003EN Micronas HAL581 DATA SHEET 4.6. HAL581 Applications The HAL581 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–21). The HAL581 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – position and end point detection, and – rotating speed measurement. Current consumption Magnetic Features: – switching type: unipolar inverted IDDhigh BHYS – medium sensitivity – typical BON: 10 mT at room temperature IDDlow – typical BOFF: 12 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K 0 – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BON BOFF B Fig. 4–21: Definition of magnetic switching points for the HAL581 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 25 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 100 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 140 °C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 11 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 29 HAL581 DATA SHEET mT 14 mT 18 HAL 581 BOFF BON 13 BOFF BON BOFF 12 HAL 581 16 BOFFmax 14 BONmax 12 BOFFtyp 11 BON BONtyp 10 10 BOFFmin 8 9 TA = −40 °C TA = 25 °C 8 TA = 100 °C 0 5 10 15 20 0 −50 30 V VDD 0 50 100 150 °C TA, TJ Fig. 4–22: Typ. magnetic switching points versus supply voltage HAL 581 BON 13 BOFF VDD = 12 V...24 V 2 25 mT 14 VDD = 3.75 V 4 TA = 125 °C 7 6 BONmin 6 Fig. 4–24: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 12 11 10 BON 9 TA = −40 °C 8 TA = 25 °C TA = 100 °C 7 6 3.0 TA = 125 °C 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–23: Typ. magnetic switching points versus supply voltage 30 Dec. 22, 2008; DSH000145_003EN Micronas HAL584 DATA SHEET 4.7. HAL584 Applications The HAL584 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–25). The HAL584 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – position and end point detection, and – rotating speed measurement. In this two-wire sensor family, the HAL574 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: – switching type: unipolar inverted IDDlow – medium sensitivity 0 – typical BON: 7.2 mT at room temperature – typical BOFF: 9.2 mT at room temperature BON BOFF B Fig. 4–25: Definition of magnetic switching points for the HAL584 – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 25 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 100 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 140 °C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 8.2 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 31 HAL584 DATA SHEET mT 12 mT 14 HAL 584 BON BOFF BOFF BON BOFF 10 HAL 584 BOFFmax 12 BONmax 10 8 BOFFtyp 8 BON BONtyp 6 6 BOFFmin TA = −40 °C 4 TA = 25 °C BONmin 4 TA = 100 °C 2 TA = 125 °C 0 0 5 10 15 20 25 0 −50 30 V VDD HAL 584 BON BOFF 10 VDD = 24 V 0 50 100 150 °C TA, TJ Fig. 4–26: Typ. magnetic switching points versus supply voltage mT 12 VDD = 3.75 V...12 V 2 Fig. 4–28: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 8 BON 6 TA = −40 °C 4 TA = 25 °C TA = 100 °C 2 0 3.0 TA = 125 °C 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–27: Typ. magnetic switching points versus supply voltage 32 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET 5. Application Notes 5.2. Extended Operating Conditions 5.1. Application Circuit All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14). Fig. 5–1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: R Lmax Note: The functionality of the sensor below 3.75 V is not tested on a regular base. For special test conditions, please contact Micronas. V SUPmin – 3.75 V = ------------------------------------------17 mA 1 VDD VSUP 5.3. Start-Up Behavior VSIG Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 15). During the initialization time, the current consumption is not defined and can toggle between low and high. RL 2 or x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package HAL57x Fig. 5–1: Application circuit 1 For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 Ω to 30 Ω) and a capacitor both placed close to the sensor are recommended (see Fig. 5–2). In this case, the maximum RL can be calculated as: R Lmax After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL58x In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. VSUPmin – 3.75 V = ------------------------------------------- – RV 17 mA Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. 1 VDD VSUP Typically, the sensors operate with supply voltages above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification. RV VSIG 4.7 nF RL 2 or x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5–2: Application circuit 2 Micronas Dec. 22, 2008; DSH000145_003EN 33 HAL57x, HAL58x DATA SHEET 5.4. Ambient Temperature 5.5. EMC and ESD Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–3). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. T J = T A + ΔT Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. At static conditions and continuous operation, the following equation applies: ΔT = IDD × VDD × R th Please contact Micronas for detailed information and first EMC and ESD results. RV1 RV2 100 Ω 30 Ω For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: 1 VDD VEMC T Amax = T Jmax – ΔT 4.7 nF 2, x GND For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 μs to 1 ms, the following equation can be used: x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5–3: Recommded EMC test circuit ton T = IDD × VDD × R th × -------------------t off + ton 34 Dec. 22, 2008; DSH000145_003EN Micronas HAL57x, HAL58x DATA SHEET intentionally left vacant Micronas Dec. 22, 2008; DSH000145_003EN 35 HAL57x, HAL58x DATA SHEET 6. Data Sheet History 1. Data sheet: “HAL574...HAL576, 581, 584 Two-wire Hall Effect Sensor Family”, April 11, 2002 6251-5381DS. First release of the data sheet. Major changes: – “K” temperature range specified – HAL571 and HAL573 deleted – HAL576 added 2. Data Sheet: “HAL573...HAL576, HAL581...HAL584 Two-Wire Hall Effect Sensor Family”, Nov. 27, 2003, 6251-538-2DS. Second release of the data sheet. Major changes: – specification for HAL573 added – new package diagrams for SOT89B-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added 3. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, Nov. 5, 2007, DSH000145_001EN. Third release of the data sheet. Major changes: – specification for HAL579 added – specification for HAL573 updated – package diagrams for SOT89B-1, TO92UA-1, and TO92UA-2 updated 4. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, March 7, 2008, DSH000145_002EN. Fourth release of the data sheet. Minor changes: – specification for HAL579 updated – ammopack diagrams for TO92UA-1 and TO92UA-2 updated 5. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, Dec. 22, 2008, DSH000145_003EN. Fifth release of the data sheet. Major changes: – Section 1.6. Solderability and Welding updated – Section 3.5. Recommended Operating Conditions updated Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com 36 Dec. 22, 2008; DSH000145_003EN Micronas