AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL MAXIMUM RATINGS IC 7.0 A VCB 50 V PDISS 220 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 0.80 C/W O O O O O 1 = COLLECTER 2 & 4 = BASE 3 = EMITTER O CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS BVCBO IC = 40 mA BVCER IC = 40 mA BVEBO IE = 10 mA ICBO VCB = 50 V hFE VCE = 5 V POUT PG ηC f = 960 to 1215 MHz PIN = 13 W VCC = 50 V Pulse Width = 10 µS Duty Cycle = 10% RBE = 10 Ω IC = 2.0 A MINIMUM TYPICAL MAXIMUM UNITS 65 V 65 V 3.0 V 20 90 8.4 38 100 44 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 12 mA 120 --W dB % REV. B 1/2 AM0912-080 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2