ASI AM0912-080 Rf power transistor Datasheet

AM0912-080
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-080 is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
PACKAGE - .400 x .400 2NLFL
MAXIMUM RATINGS
IC
7.0 A
VCB
50 V
PDISS
220 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +200 C
θJC
0.80 C/W
O
O
O
O
O
1 = COLLECTER
2 & 4 = BASE
3 = EMITTER
O
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
BVCBO
IC = 40 mA
BVCER
IC = 40 mA
BVEBO
IE = 10 mA
ICBO
VCB = 50 V
hFE
VCE = 5 V
POUT
PG
ηC
f = 960 to 1215 MHz
PIN = 13 W
VCC = 50 V
Pulse Width = 10 µS
Duty Cycle = 10%
RBE = 10 Ω
IC = 2.0 A
MINIMUM TYPICAL MAXIMUM
UNITS
65
V
65
V
3.0
V
20
90
8.4
38
100
44
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
12
mA
120
--W
dB
%
REV. B
1/2
AM0912-080
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/2
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