IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 92mΩ 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 37 280 A A IA EAS TC = 25°C TC = 25°C 35 5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 360 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 40..120 / 9..27 N/lb. 2500 3000 V~ V~ z 8 g z TL TSOLD 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight G D ISOLATED TAB S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation Fast Intrinsic Diode Avalanche Rated Low QG Low Package Inductance Advantages z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 35A, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved z z V z 5.5 V z ± 200 nA z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 100 μA 5 mA 92 mΩ DS100068A(06/09) IXFL70N60Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 VDS = 10V, ID = 35A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 35A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 35A Qgd ISOPLUS264TM (IXFL) Outline 50 S 12 nF 1340 pF 345 pF 26 ns 25 ns 60 ns 12 ns 265 nC 57 nC 120 nC Note: Bottom heatsink meets 0.35 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 250 ns QRM IRM 1.2 8.0 Ref: IXYS CO 0128 μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL70N60Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 140 VGS = 10V 7V 60 50 7V 100 6V I D - Amperes I D - Amperes VGS = 10V 120 40 30 20 80 6V 60 40 5V 10 20 0 0 0 1 2 3 4 5 6 5V 0 7 2 4 6 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 16 18 20 Junction Temperature 3.0 VGS = 10V 7V 2.6 RD S (on) - Normalized 60 I D - Amperes 14 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. 70 6V 50 40 5V 30 20 VGS = 10V 2.2 I D = 70A 1.8 I D = 35A 1.4 1.0 0.6 10 0.2 -50 0 0 2 4 6 8 10 12 14 16 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D Fig. 6. Drain Current vs. Case Temperature 2.8 150 40 2.6 VGS = 1 0V 35 T J = 1 25ºC 2.4 30 2.2 I D - Amperes RD S (on) - Normalized 8 10 12 VDS - Volts 2.0 1.8 1.6 1.4 1.2 20 15 10 T J = 25ºC 1.0 25 5 0.8 0.6 0 20 40 60 I D 80 - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 100 120 140 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFL70N60Q2 Fig. 8. Transconductance 100 100 90 90 80 80 70 70 gf s - Siemens I D - Amperes Fig. 7. Input Admittance T J = 1 25ºC 60 25ºC 50 - 40ºC 40 T J = - 40ºC 25ºC 60 1 25ºC 50 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 140 10 9 120 VD S = 300V I D = 35A I G = 10mA 8 100 7 VG S - Volts I S - Amperes 40 I 80 60 5 4 3 T J = 1 25ºC 40 6 2 T J = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 80 Q V SD - Volts 120 G 160 200 240 280 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100000 Ciss Z(th)JC - ºC / W Capacitance - pF f = 1 MHz 10000 Coss 1000 0.100 Crss 100 0 5 10 15 20 25 30 35 40 V DS - Volts 0.010 1 10 100 1000 Pulse Width - millisecond IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F _70N60Q2(95)5-28-08-A