MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • • • • http://onsemi.com 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 250 WATTS High Safe Operating Area For Low Distortion Complementary Designs High DC Current Gain These Devices are Pb−Free and are RoHS Compliant* SCHEMATIC MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 140 Vdc Collector−Base Voltage VCBO 140 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector Current − Continuous IC 20 Adc Base Current − Continuous IB 5 Adc Emitter Current − Continuous IE 25 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C TJ, Tstg –65 to +200 °C Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NPN PNP CASE 3 CASE 3 1 BASE 1 BASE EMITTER 2 EMITTER 2 3 TO−204AA (TO−3) CASE 1−07 STYLE 1 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for v 10 secs Symbol Max Unit RqJC 0.70 °C/W TL 265 °C MJ1500xG AYYWW MEX MJ1500x = Device Code x = 3 or 4 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 16 1 Package Shipping MJ15003G TO−204AA (Pb−Free) 100 Units/Tray MJ15004G TO−204AA (Pb−Free) 100 Units/Tray Publication Order Number: MJ15003/D MJ15003 (NPN), MJ15004 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 140 − Vdc − − 100 2 mAdc mAdc OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) ICEX Collector Cutoff Current (VCE = 140 Vdc, IB = 0) ICEO − 250 mAdc Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO − 100 mAdc 5.0 1.0 − − hFE 25 150 − Collector Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VCE(sat) − 1.0 Vdc Base Emitter On Voltage (IC = 5 Adc, VCE = 2 Vdc) VBE(on) − 2.0 Vdc fT 2.0 − MHz cob − 1000 pF SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non repetitive)) (VCE = 100 Vdc, t = 1 s (non repetitive)) Adc ON CHARACTERISTICS DC Current Gain (IC = 5 Adc, VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. TYPICAL CHARACTERISTICS MJ15003G (NPN) 0.8 VCE = 2 V 150°C hFE, DC CURRENT GAIN VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) 100 25°C −55°C 10 0.1 1 10 0.6 25°C 0.5 −55°C 0.4 0.3 0.2 0.1 0 100 150°C IC/IB = 10 0.7 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 MJ15003 (NPN), MJ15004 (PNP) TYPICAL CHARACTERISTICS MJ15003G (NPN) 100 IC/IB = 10 1.4 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 1.6 1.2 1.0 −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0.1 1 10 1.0 Sec 1 0.1 100 100 mSec 10 1 10 100 1,000 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Base−Emitter Saturation Voltage Figure 4. Safe Operating Area TYPICAL CHARACTERISTICS MJ15004G (PNP) 1.0 25°C 150°C 100 VCE = 2 V VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 −55°C 10 1 0.1 1 10 100 0.7 150°C 0.6 −55°C 0.5 25°C 0.4 0.3 0.2 0.1 0 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain Figure 6. Collector−Emitter Saturation Voltage 100 1.2 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 0.8 IC, COLLECTOR CURRENT (A) 1.4 IC/IB = 10 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 IC/IB = 10 0.9 0.1 1 10 100 mSec 10 1.0 Sec 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Base−Emitter Saturation Voltage Figure 8. Safe Operating Area http://onsemi.com 3 1,000 MJ15003 (NPN), MJ15004 (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C E D −T− K 2 PL 0.13 (0.005) U V SEATING PLANE T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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