ON MJ15004G Complementary silicon power transistor Datasheet

MJ15003 (NPN),
MJ15004 (PNP)
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
•
•
•
•
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20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
High Safe Operating Area
For Low Distortion Complementary Designs
High DC Current Gain
These Devices are Pb−Free and are RoHS Compliant*
SCHEMATIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
140
Vdc
Collector−Base Voltage
VCBO
140
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector Current − Continuous
IC
20
Adc
Base Current − Continuous
IB
5
Adc
Emitter Current − Continuous
IE
25
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
TJ, Tstg
–65 to +200
°C
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NPN
PNP
CASE 3
CASE 3
1
BASE
1
BASE
EMITTER 2
EMITTER 2
3
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2
1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
Symbol
Max
Unit
RqJC
0.70
°C/W
TL
265
°C
MJ1500xG
AYYWW
MEX
MJ1500x = Device Code
x = 3 or 4
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 16
1
Package
Shipping
MJ15003G
TO−204AA
(Pb−Free)
100 Units/Tray
MJ15004G
TO−204AA
(Pb−Free)
100 Units/Tray
Publication Order Number:
MJ15003/D
MJ15003 (NPN), MJ15004 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
−
Vdc
−
−
100
2
mAdc
mAdc
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ICEX
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
−
250
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
−
100
mAdc
5.0
1.0
−
−
hFE
25
150
−
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
−
1.0
Vdc
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
VBE(on)
−
2.0
Vdc
fT
2.0
−
MHz
cob
−
1000
pF
SECOND BREAKDOWN
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS MJ15003G (NPN)
0.8
VCE = 2 V
150°C
hFE, DC CURRENT GAIN
VCE(sat), COLL−EMIT SATURATION
VOLTAGE (V)
100
25°C
−55°C
10
0.1
1
10
0.6
25°C
0.5
−55°C
0.4
0.3
0.2
0.1
0
100
150°C
IC/IB = 10
0.7
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
MJ15003 (NPN), MJ15004 (PNP)
TYPICAL CHARACTERISTICS MJ15003G (NPN)
100
IC/IB = 10
1.4
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
1.6
1.2
1.0
−55°C
0.8
0.6
25°C
0.4 150°C
0.2
0
0.1
1
10
1.0 Sec
1
0.1
100
100 mSec
10
1
10
100
1,000
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Safe Operating Area
TYPICAL CHARACTERISTICS MJ15004G (PNP)
1.0
25°C
150°C
100
VCE = 2 V
VCE(sat), COLL−EMIT SATURATION
VOLTAGE (V)
hFE, DC CURRENT GAIN
1,000
−55°C
10
1
0.1
1
10
100
0.7
150°C
0.6
−55°C
0.5
25°C
0.4
0.3
0.2
0.1
0
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain
Figure 6. Collector−Emitter Saturation Voltage
100
1.2
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
0.8
IC, COLLECTOR CURRENT (A)
1.4
IC/IB = 10
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
IC/IB = 10
0.9
0.1
1
10
100 mSec
10
1.0 Sec
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Safe Operating Area
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3
1,000
MJ15003 (NPN), MJ15004 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
A
N
C
E
D
−T−
K
2 PL
0.13 (0.005)
U
V
SEATING
PLANE
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
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MJ15003/D
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