Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 4 6 Q2 5 See Table Q1 4 1 1 2 2 3 3 SOT–363/SC–88 CASE 419B STYLE 1 MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage V CEO –65 –45 –30 V Collector–Base Voltage V CBO –80 –50 –30 V Emitter–Base Voltage V –5.0 –5.0 –5.0 V –100 –100 –100 mAdc Collector Current -Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 380 250 mW mW 3.0 328 –55 to +150 mW/°C °C/W °C R θJA T J , T stg 1. FR–5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device Package Shipping BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC856b–1/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit –65 –45 –30 — — — — — — –80 –50 –30 — — — — — — –80 –50 –30 — — — — — — –5.0 –5.0 –5.0 — — — — — — — — — — –15 –4.0 — — 150 270 — — 220 420 — — — — –0.6 — 290 520 — — –0.7 –0.9 –– — 475 800 –0.3 –0.65 — — –0.75 –0.82 fT 100 — — MHz C obo NF — — 4.5 pF dB — — 10 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mA) BC856 Series BC857 Series BC858 Series Collector–Emitter Breakdown Voltage (I C = –10 µA, V EB = 0) BC856 Series BC857 Series BC858 Series Collector–Base Breakdown Voltage (I C = –10 µA) BC856 Series BC857 Series BC858 Series Emitter–Base Breakdown Voltage (I E = –1.0 µA) BC856 Series Collector Cutoff Current BC857 Series BC858 Series (V CB = –30 V) (V CB = –30 V, T A = 150°C) V V (BR)CEO V (BR)CES V V V (BR)CBO V (BR)EBO I CBO V nA µA ON CHARACTERISTICS DC Current Gain (I C = –10 µA, V CE = –5.0 V) h FE BC856B, BC857B, BC858B BC857C, BC858C (I C = –2.0 mA, V CE =– 5.0 V) BC856B, BC857B, BC858B BC857C, BC858C Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) V BE(on) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) — V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = –10 V, f = 1.0 MHz) Noise Figure (I C = –0.2 mA, V CE = –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC856b–2/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1 BC858BDW1T1, BC858CDW1T1 -1.0 V, VOLTAGE (VOLTS) -0.8 2.0 1.0 0.5 0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.4 -0.2 -0.2 -5.0 -10 -20 -50 Figure 2. “On” Voltage -1.2 -0.8 -0.4 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 I B , BASE CURRENT (mA) 10 0.8 6.0 4.0 2.0 -1.0 -2.0 -5.0 -10 -20 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance -50 -100 f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) 20 -0.5 -100 -200 -100 -200 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 40 -0.1 -0.2 -2.0 Figure 1. DC Current Gain -1.6 -0.05 -1.0 I C , COLLECTOR CURRENT (mA) -2.0 -0.02 -0.5 I C , COLLECTOR CURRENT (AMP) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -0.6 0 -0.1 -0.2 θ VB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) TYPICAL PNP CHARACTERISTICS — BC856 500 200 100 50 20 -1.0 -10 -100 I C , COLLECTOR CURRENT (mA) Figure 6. Current–Gain – Bandwidth Product BC856b–3/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1 BC858BDW1T1, BC858CDW1T1 2.0 -1.0 1.5 -0.8 1.0 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) TYPICAL PNP CHARACTERISTICS — BC857/BC858 0.7 0.5 0.3 0.2 -0.2 -0.6 -0.4 -0.2 0 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -1.0 -0.2 -1.6 -1.2 -0.8 -0.4 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 I B , BASE CURRENT (mA) θ VB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 -0.05 C, CAPACITANCE (pF) 7.0 5.0 3.0 2.0 1.0 -1.0 -2.0 -4.0 -6.0 -10 -20 V R , REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance -30 -40 f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) 10 -0.6 -2.0 -5.0 -10 -20 -50 -100 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2 -0.5 -1.0 -10 -100 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient Figure 9. Collector Saturation Region -0.4 -1.0 Figure 8. “Saturation” and “On” Voltages Figure 7. Normalized DC Current Gain -0.02 -0.5 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) 400 300 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 I C , COLLECTOR CURRENT (mA) Figure 12. Current-Gain-Bandwidth Product BC856b–4/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P (pk) t1 0.01 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M t, TIME (ms) Figure 13. Thermal Response I C , COLLECTOR CURRENT (mA) -200 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area BC856b–5/5