ETL BC858CDW1T1 Dual general purpose transistor Datasheet

Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
5
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
4
6
Q2
5
See Table
Q1
4
1
1
2
2
3
3
SOT–363/SC–88
CASE 419B STYLE 1
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V CEO
–65
–45
–30
V
Collector–Base Voltage
V CBO
–80
–50
–30
V
Emitter–Base Voltage
V
–5.0
–5.0
–5.0
V
–100
–100
–100
mAdc
Collector Current -Continuous
EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
380
250
mW
mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
R θJA
T J , T stg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
Package
Shipping
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC856b–1/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
–65
–45
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–15
–4.0
—
—
150
270
—
—
220
420
—
—
—
—
–0.6
—
290
520
—
—
–0.7
–0.9
––
—
475
800
–0.3
–0.65
—
—
–0.75
–0.82
fT
100
—
—
MHz
C obo
NF
—
—
4.5
pF
dB
—
—
10
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage
(I C = –10 µA, V EB = 0)
BC856 Series
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage
(I C = –10 µA)
BC856 Series
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage
(I E = –1.0 µA)
BC856 Series
Collector Cutoff Current
BC857 Series
BC858 Series
(V CB = –30 V)
(V CB = –30 V, T A = 150°C)
V
V
(BR)CEO
V (BR)CES
V
V
V
(BR)CBO
V (BR)EBO
I CBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V)
h FE
BC856B, BC857B, BC858B
BC857C, BC858C
(I C = –2.0 mA, V CE =– 5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V CE(sat)
Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
V BE(on)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = –10 V, f = 1.0 MHz)
Noise Figure (I C = –0.2 mA,
V CE = –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
BC856b–2/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
-1.0
V, VOLTAGE (VOLTS)
-0.8
2.0
1.0
0.5
0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100 -200
-0.4
-0.2
-0.2
-5.0
-10
-20
-50
Figure 2. “On” Voltage
-1.2
-0.8
-0.4
0
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
I B , BASE CURRENT (mA)
10
0.8
6.0
4.0
2.0
-1.0
-2.0
-5.0
-10
-20
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50
-100
f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)
20
-0.5
-100
-200
-100
-200
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
40
-0.1 -0.2
-2.0
Figure 1. DC Current Gain
-1.6
-0.05
-1.0
I C , COLLECTOR CURRENT (mA)
-2.0
-0.02
-0.5
I C , COLLECTOR CURRENT (AMP)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
-0.6
0
-0.1 -0.2
θ VB , TEMPERATURE COEFFICIENT (mV/°C)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL PNP CHARACTERISTICS — BC856
500
200
100
50
20
-1.0
-10
-100
I C , COLLECTOR CURRENT (mA)
Figure 6. Current–Gain – Bandwidth Product
BC856b–3/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
2.0
-1.0
1.5
-0.8
1.0
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL PNP CHARACTERISTICS — BC857/BC858
0.7
0.5
0.3
0.2
-0.2
-0.6
-0.4
-0.2
0
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
-1.0
-0.2
-1.6
-1.2
-0.8
-0.4
0
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
I B , BASE CURRENT (mA)
θ VB , TEMPERATURE COEFFICIENT (mV/°C)
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
-0.05
C, CAPACITANCE (pF)
7.0
5.0
3.0
2.0
1.0
-1.0
-2.0
-4.0
-6.0
-10
-20
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
-30 -40
f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)
10
-0.6
-2.0
-5.0
-10
-20
-50
-100
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-0.2
-0.5
-1.0
-10
-100
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
Figure 9. Collector Saturation Region
-0.4
-1.0
Figure 8. “Saturation” and “On” Voltages
Figure 7. Normalized DC Current Gain
-0.02
-0.5
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
400
300
200
150
100
80
60
40
30
20
-0.5
-1.0
-2.0
-3.0
-5.0
-10
-20
-30
-50
I C , COLLECTOR CURRENT (mA)
Figure 12. Current-Gain-Bandwidth Product
BC856b–4/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Z θJA (t) = r(t) R θJA
R θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R θJC (t)
P (pk)
t1
0.01
t2
DUTY CYCLE, D = t 1 /t 2
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
t, TIME (ms)
Figure 13. Thermal Response
I C , COLLECTOR CURRENT (mA)
-200
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk) < 150°C. T J
(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by the secondary breakdown.
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BC856b–5/5
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