BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2010 DESCRIPTION FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 25mA (Max.) operating current I-grade: 30mA (Max.) operating current 0.15uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2010 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.15uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2010 is available in DICE form , JEDEC standard 44-pin TSOP Type II package. 48-pin TSOP Type I package and 48-ball BGA package. PRODUCT FAMILY PRODUCT FAMILY BS616LV2010EC BS616LV201 0EI OPERATING TEMPERATURE Vcc RANGE POWER DISSIPATION STANDBY Operating SPEED (ns) ( ICCSB1, Max ) ( ICC, Max ) Vcc=3.0V Vcc=3.0V Vcc=3.0V PKG TYPE O O 2.7V ~ 3.6V 70 / 100 8uA 25mA TSOP2-44 O O 2.7V ~ 3.6V 70 / 100 12uA 30mA TSOP2-44 +0 C to +70 C -40 C to +85 C PIN CONFIGURATIONS BLOCK DIAGRAM A8 A13 A15 Address A16 A14 Input A12 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 BS616LV2010EC BS616LV2010EI 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 Buffer A7 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 20 1024 Row Memory Array Decoder 1024 x 2048 A6 A5 A4 2048 16 DQ0 . . . . . . . . Data Input Buffer 16 Column I/O Write Driver Sense Amp 16 Data Output Buffer DQ15 16 128 Column Decoder 14 CE WE OE UB LB Control Address Input Buffer A11 A9 A3 A2 A1 A0 A10 Vcc Gnd Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. R0201-BS616LV2010 1 Revision 2.2 April. 2001 BSI BS616LV2010 PIN DESCRIPTIONS Name Function A0-A16 Address Input These 17 address inputs select one of the 131,072 x 16-bit words in the RAM. CE Chip Enable Input CE is active LOW. Chip enables must be active when data read from or write to the device. if chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. DQ0 - DQ15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground TRUTH TABLE MODE CE WE OE LB UB DQ0~DQ7 DQ8~DQ15 Vcc CURRENT Not selected (Power Down) H X X X X High Z High Z ICCSB, ICCSB1 Output Disabled L H H X X High Z High Z ICC L L Dout Dout ICC H L High Z Dout ICC L H Dout High Z ICC L L Din Din ICC H L X Din ICC L H Din X ICC Read Write R0201-BS616LV2010 L L H L L X 2 Revision 2.2 April. 2001 BSI BS616LV2010 ABSOLUTE MAXIMUM RATINGS(1) SYMBOL PARAMETER with OPERATING RANGE RATING UNITS -0.5 to Vcc+0.5 V VTERM Terminal Voltage Respect to GND TBIAS Temperature Under Bias -40 to +125 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C 2.7V ~ 3.6V O Industrial O -40 C to +85 C 2.7V ~ 3.6V CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 6 pF VI/O=0V 8 pF 1. This parameter is guaranteed and not tested. DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC ) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS IIL Guaranteed Input Low Voltage(2) Guaranteed Input High Voltage(2) Input Leakage Current IOL Output Leakage Current Vcc = Max, CE = VIH, or OE = VIH, VI/O = 0V to Vcc VOL Output Low Voltage Vcc = Max, IOL = 2mA Vcc=3.0V -- -- 0.4 V VOH Output High Voltage Vcc = Min, IOH = -1mA Vcc=3.0V 2.4 -- -- V ICC Operating Power Supply Current CE = VIL, IDQ = 0mA, F = Fmax(3) Vcc=3.0V -- -- 25 mA ICCSB Standby Current-TTL CE = VIH, IDQ = 0mA Vcc=3.0V -- -- 1 mA ICCSB1 Standby Current-CMOS CE Њ Vcc-0.2V, VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc=3.0V -- 0.15 8 uA VIL VIH Vcc=3.0V -0.5 -- 0.8 V Vcc=3.0V 2.0 -- Vcc+0.2 V Vcc = Max, VIN = 0V to Vcc -- -- 1 uA -- -- 1 uA 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS V DR Vcc for Data Retention CE Њ Vcc - 0.2V V IN Њ Vcc - 0.2V or V IN Љ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE Њ Vcc - 0.2V V IN Њ Vcc - 0.2V or V IN Љ 0.2V -- 0.1 5 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns T RC (2) -- -- ns tR See Retention Waveform Operation Recovery Time 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time R0201-BS616LV2010 3 Revision 2.2 April. 2001 BSI BS616LV2010 LOW VCC DATA RETENTION WAVEFORM ( CE Controlled ) Data Retention Mode Vcc VDR ≥ 1.5V Vcc Vcc tR t CDR CE ≥ Vcc - 0.2V VIH CE KEY TO SWITCHING WAVEFORMS AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level VIH Vcc/0V 5ns WAVEFORM 0.5Vcc AC TEST LOADS AND WAVEFORMS 1269 Ω 3.3V 1269 Ω 3.3V OUTPUT OUTPUT 100PF INCLUDING JIG AND SCOPE 1404 Ω 1404 Ω FIGURE 1A FIGURE 1B THEVENIN EQUIVALENT 667 Ω OUTPUT OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H , 5PF INCLUDING JIG AND SCOPE INPUTS DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE 1.73V ALL INPUT PULSES Vcc GND → 10% 90% 90% 10% ← → ← 5ns FIGURE 2 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V ) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME t AVAX tRC Read Cycle Time 70 -- -- 100 -- -- t AVQV tAA Address Access Time -- -- 70 -- -- 100 ns tELQV tACS Chip Select Access Time (CE) -- -- 70 -- -- 100 ns tBA tBA Data Byte Control Access Time (LB,UB) -- -- 40 -- -- 50 ns tGLQV tOE Output Enable to Output Valid -- -- 50 -- -- 60 ns t E1LQX tCLZ Chip Select to Output Low Z (CE) 10 -- -- 15 -- -- ns tBE tBE Data Byte Control to Output Low Z (LB,UB) 10 -- -- 15 -- -- ns tGLQX tOLZ Output Enable to Output in Low Z tEHQZ tCHZ Chip Deselect to Output in High Z tBDO tBDO Data Byte Control to Output High Z tGHQZ tOHZ Output Disable to Output in High Z t AXOX tOH Output Disable to Address Change R0201-BS616LV2010 BS616LV2010-70 MIN. TYP. MAX. DESCRIPTION 4 BS616LV2010-10 MIN. TYP. MAX. UNIT ns 10 -- -- 15 -- -- ns (CE) 0 -- 35 0 -- 40 ns (LB,UB) 0 -- 30 0 -- 35 ns 0 -- 30 0 -- 35 ns 10 -- -- 15 -- -- ns Revision 2.2 April. 2001 BSI BS616LV2010 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT READ CYCLE2 (1,3,4) CE t ACS t BA LB,UB t BE D OUT t t BDO (5) t (5) CHZ CLZ READ CYCLE3 (1,4) t RC ADDRESS t AA OE t OH t OE t OLZ CE (5) t CLZ t t OHZ (5) t CHZ(1,5) ACS t BA LB,UB t BE t BDO D OUT NOTES: 1. WE is high for read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL . 5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. R0201-BS616LV2010 5 Revision 2.2 April. 2001 BSI BS616LV2010 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME t AVAX t E1LWH t AVWL t AVWH t WLWH t WHAX t BW t WLQZ t DVWH t WHDX t GHQZ t WC t CW t AS t AW t WP t WR t BW t WHZ t DW t DH t OHZ t WHOX t OW BS616LV2010-70 MIN. TYP. MAX. DESCRIPTION Write Cycle Time 70 -- Chip Select to End of Write 70 0 Address Valid to End of Write Write Pulse Width -- 100 -- -- 100 -- -- 0 70 -- -- 100 50 -- -- 70 (CE,WE) 0 -- -- (LB,UB) 60 -- -- Address Setup Time Write recovery Time Date Byte Control to End of Write BS616LV2010-10 MIN. TYP. MAX. -- UNIT -- ns -- -- ns -- -- ns -- -- ns -- -- ns 0 -- -- ns 80 -- -- ns 0 -- 30 0 -- 40 ns Data to Write Time Overlap 30 -- -- 40 -- -- ns Data Hold from Write Time 0 -- -- 0 -- -- ns Output Disable to Output in High Z 0 -- 30 0 -- 40 ns End of Write to Output Active 5 -- -- 10 -- -- ns Write to Output in High Z SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS (3) t WR OE (11) t CW (5) CE t BW LB,UB t AW WE (3) t WP t AS (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS616LV2010 6 Revision 2.2 April. 2001 BSI BS616LV2010 WRITE CYCLE2 (1,6) t WC ADDRESS (11) t CW (5) CE t BW LB,UB t AW WE t WR t WP (3) (2) t t AS DH (4,10) t WHZ D OUT (7) (8) t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE going low to the end of write. R0201-BS616LV2010 7 Revision 2.2 April. 2001 BSI BS616LV2010 ORDERING INFORMATION BS616LV2010 X X -- Y Y SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE E: TSOP 2 - 44 PIN PACKAGE DIMENSIONS TSOP2-44 R0201-BS616LV2010 8 Revision 2.2 April. 2001 BSI BS616LV2010 REVISION HISTORY Revision Description Date 2.2 2001 Data Sheet release Apr. 15, 2001 R0201-BS616LV2010 9 Note Revision 2.2 April. 2001