MC14517B Dual 64-Bit Static Shift Register The MC14517B dual 64−bit static shift register consists of two identical, independent, 64−bit registers. Each register has separate clock and write enable inputs, as well as outputs at bits 16, 32, 48, and 64. Data at the data input is entered by clocking, regardless of the state of the write enable input. An output is disabled (open circuited) when the write enable input is high. During this time, data appearing at the data input as well as the 16−bit, 32−bit, and 48−bit taps may be entered into the device by application of a clock pulse. This feature permits the register to be loaded with 64 bits in 16 clock periods, and also permits bus logic to be used. This device is useful in time delay circuits, temporary memory storage circuits, and other serial shift register applications. http://onsemi.com 1 SOIC−16 WB DW SUFFIX CASE 751G Features • • • • • • • • • • Diode Protection on All Inputs Fully Static Operation Output Transitions Occur on the Rising Edge of the Clock Pulse Exceedingly Slow Input Transition Rates May Be Applied to the Clock Input 3−State Output at 64th−Bit Allows Use in Bus Logic Applications Shift Registers of any Length may be Fully Loaded with 16 Clock Pulses Supply Voltage Range = 3.0 Vdc to 18 Vdc Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant MAXIMUM RATINGS (Voltages Referenced to VSS) Parameter Symbol Value Unit VDD −0.5 to +18.0 V Input or Output Voltage Range (DC or Transient) Vin, Vout −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin Iin, Iout ±10 mA DC Supply Voltage Range Power Dissipation per Package (Note 1) PD 500 mW Operating Temperature Range TA −55 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Lead Temperature (8−Second Soldering) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: Plastic “D/DW” Package: –7.0 mW/_C From 65_C to 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 9 1 MARKING DIAGRAM 16 14517B AWLYYWWG 1 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G = Pb−Free Package PIN ASSIGNMENT Q16A 1 16 VDD Q48A 2 15 Q16B WEA 3 14 Q48B CA 4 13 WEB Q64A 5 12 CB Q32A 6 11 Q64B DA 7 10 Q32B VSS 8 9 DB ORDERING INFORMATION Package Shipping† MC14517BDWG SOIC−16 WB (Pb−Free) 47 Units/Rail MC14517BDWR2G SOIC−16 WB (Pb−Free) 1000 / Tape & Reel NLV14517BDWR2G SOIC−16 WB (Pb−Free) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MC14517B/D MC14517B FUNCTIONAL TRUTH TABLE (X = Don’t Care) Clock Write Enable Data 16−Bit Tap 32−Bit Tap 48−Bit Tap 64−Bit Tap 0 0 X Content of 16−Bit Displayed Content of 32−Bit Displayed Content of 48−Bit Displayed Content of 64−Bit Displayed 0 1 X High Impedance High Impedance High Impedance High Impedance 1 0 X Content of 16−Bit Displayed Content of 32−Bit Displayed Content of 48−Bit Displayed Content of 64−Bit Displayed 1 1 X High Impedance High Impedance High Impedance High Impedance 0 Data entered into 1st Bit Content of 16−Bit Displayed Content of 32−Bit Displayed Content of 48−Bit Displayed Content of 64−Bit Displayed 1 Data entered into 1st Bit Data at tap entered into 17−Bit Data at tap entered into 33−Bit Data at tap entered into 49−Bit High Impedance 0 X Content of 16−Bit Displayed Content of 32−Bit Displayed Content of 48−Bit Displayed Content of 64−Bit Displayed 1 X High Impedance High Impedance High Impedance High Impedance ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) − 55_C 25_C VDD 125_C Symbol Vdc Min Max Min Typ (Note 2) Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Characteristic Output Voltage Vin = VDD or 0 Vin = 0 or VDD Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Source Sink Input Current Vdc VIH Vdc IOH mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mAdc Total Supply Current (Note 3, 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) IT 5.0 10 15 Three−State Leakage Current ITL 15 IT = (4.2 mA/kHz) f + IDD IT = (8.8 mA/kHz) f + IDD IT = (13.7 mA/kHz) f + IDD ±0.1 − − ±0.0001 ±0.1 mAdc − ±3.0 mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004. http://onsemi.com 2 MC14517B SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) VDD Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 475 210 140 770 300 215 tWH 5.0 10 15 330 125 100 170 75 60 − − − ns fcl 5.0 10 15 − − − 3.0 6.7 8.3 1.5 4.0 5.3 MHz tTLH, tTHL 5.0 10 15 Characteristic Symbol Output Rise and Fall Time tTLH, tTHL = (1.5 ns/pF) CL + 25 ns tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns tTLH, tTHL = (0.65 ns/pF) CL + 9.5 ns tTLH, tTHL Propagation Delay Time tPLH, tPHL = (1.7 ns/pF) CL + 390 ns tPLH, tPHL = (0.66 ns/pF) CL + 177 ns tPLH, tPHL = (0.5 ns/pF) CL + 115 ns tPLH, tPHL Clock Pulse Width Clock Pulse Frequency Clock Pulse Rise and Fall Time Unit ns ns − See (Note 7) Data to Clock Setup Time tsu 5.0 10 15 0 10 15 – 40 – 15 0 − − − ns Data to Clock Hold Time th 5.0 10 15 150 75 35 75 25 10 − − − ns Write Enable to Clock Setup Time tsu 5.0 10 15 400 200 110 170 65 50 − − − ns Write Enable to Clock Release Time trel 5.0 10 15 380 180 100 160 55 40 − − − ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 7. When shift register sections are cascaded, the maximum rise and fall time of the clock input should be equal to or less than the rise and fall time of the data outputs, driving data inputs, plus the propagation delay of the output driving stage. VDD D REPETITIVE WAVEFORM C C CL WE CL VSS D C VDD D (f = 1/2 fo) CL Q16 Q32 Q48 Q64 D C VDD fo CL VSS WE Q16 Q32 Q48 Q64 VSS 50 mF ID CL CL Figure 1. Power Dissipation Test Circuit and Waveform http://onsemi.com 3 CL CL MC14517B Vout = VOH Vout = VOL VDD = VGS VDD = VGS Q16 Q32 Q48 Q64 D C Q16 Q32 Q48 Q64 D C WE WE D C D C IOH WE IOL WE Q16 Q32 Q48 Q64 Q16 Q32 Q48 Q64 EXTERNAL POWER SUPPLY VSS EXTERNAL POWER SUPPLY VSS (Output being tested should be in the high−logic state) (Output being tested should be in the low−logic state) Figure 2. Typical Output Source Current Characteristics Test Circuit Figure 3. Typical Output Sink Current Characteristics Test Circuit tWH tWL PIN NO'S 1 2 16 17 18 90% 19 10% CLOCK 4 (12) trel WRITE 3 (13) th1 th1 32-BIT OUTPUT 6 (10) 33-BIT INPUT tsu1 th1 48-BIT OUTPUT 2 (14) 49-BIT INPUT 10% tPHL tsu0 th0 tsu1 VDD 90% 50% th1 16-BIT OUTPUT 1 (15) 17-BIT INPUT tsu1 VSS 20 ns tsu0 tPLH 90% VDD tsu0 th0 20 ns tsu0 th0 20 ns VDD 50% VSS VDD th0 tsu1 DATA IN 7 (9) tsu 33 tPHL VDD tPHL VDD tTLH tPLH 90% tTLH tPLH VSS VOH VDD 10% V tTHL OL VOH 50% 10% VOL tTHL VOH VSS tTLH tPLH tPHL 20 ns 50% tTHL VDD VSS VDD VSS VOL VDD 64-BIT OUTPUT 5 (11) tTLH VSS tTHL Figure 4. AC Test Waveforms EXPANDED BLOCK DIAGRAM (1/2 OF DEVICE SHOWN) CLOCK DATA WRITE ENABLE D C 1 Q D C 2 Q D Q C 16 3-STATE WRITE ENABLE = 0, 16-BIT OUTPUT WRITE ENABLE = 1, 17-BIT INPUT D Q C 32 3-STATE D Q C 17 WE 32-BIT OUTPUT 33-BIT INPUT http://onsemi.com 4 D Q C 33 WE D Q C 48 3-STATE 48-BIT OUTPUT 49-BIT INPUT D Q C 49 WE D C 64 Q 3-STATE 64-BIT OUTPUT HIGH IMPEDANCE MC14517B PACKAGE DIMENSIONS SOIC−16 WB CASE 751G−03 ISSUE D A D 9 1 8 h X 45 _ H E 0.25 8X M B M 16 q 16X M B B T A MILLIMETERS DIM MIN MAX A 2.35 2.65 A1 0.10 0.25 B 0.35 0.49 C 0.23 0.32 D 10.15 10.45 E 7.40 7.60 e 1.27 BSC H 10.05 10.55 h 0.25 0.75 L 0.50 0.90 q 0_ 7_ S B S L A 0.25 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. 14X C A1 e T SEATING PLANE SOLDERING FOOTPRINT 16X 0.58 11.00 1 16X 1.27 PITCH 1.62 DIMENSIONS: MILLIMETERS ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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