CHA3565-QAG RoHS COMPLIANT UMS A3667A A3688A YYWWG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package The CHA3565-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A3667A A3688A YYWWG Description UMS A3667A A3688A YYWWG UMS UMS UMS A3565 A3667A A3688A A3667A A3688A YYWW YYWWG YYWWG Gain, return losses & NF (dB) Main Features 20 ■ Broadband performances: 5-21GHz ■ 20.5dBm saturated output power ■ 15dB gain ■ DC bias: Vd=5Volt @ Id=120mA ■ 16L-QFN3x3 ■ MSL1 15 10 5 Sij & NF (dB) 0 S21 -5 S11 S22 NF -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 Frequency (GHz) 20 22 24 26 28 30 Main Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Freq Frequency range Gain Linear Gain Pout-1dB Output Power @1dB gain compression Psat Saturated Output Power Id Drain current Ref. : DSCHA3565-QAG3199 - 18 Jul 13 1/14 Min 5 12.5 17.5 19 Typ Max 21 15 19.5 20.5 120 Unit GHz dB dBm dBm mA Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 5 21 GHz Gain Linear Gain 12.5 15 dB Pout-1dB Output Power @1dB gain compression 17.5 19.5 dBm Psat Saturated Output Power 19 20.5 dBm C/I3 C/I3 @ Pin/tone = -8dBm , Vd = 5V 5.0 to 7.5GHz 40 dBc 7.5 to 16.5GHz 34 dBc 16.5 to 20GHz 33 dBc dBS11 Input Return Loss -8 -6 dB dBS22 Output Return Loss -10 -8 dB NF Noise Figure 6 dB Vd Drain supply voltage 5 V Id Drain current 120 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Vd Drain bias voltage Id Drain bias current Vg Gate bias voltage Ig Gate bias current Maximum negative gate drain Voltage (Vd-Vg/2) Vgd (an array of resistor divides gate voltage by 2) Pin Maximum continuous input power Tj Junction temperature Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters damage. Values 6.0 175 -2 to +0.4 +0.7 Unit V mA V mA 8 V +10 dBm 175 °C -40 to +85 °C -55 to +150 °C may cause permanent Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Vd 13 Drain voltage Vg 5 Gate voltage Gate voltage is tuned to obtain 120mA drain current. Vg can be either negative or positive supply bias. Ref. : DSCHA3565-QAG3199 - 18 Jul 13 2/14 Values +5.0 -1 to +0.4 Unit V V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA3565-QAG Recommended max. junction temperature (Tj max) : 166 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 0.6 => Pdiss. Max. derating above Tcase(1)= 85 °C : 7 (2) Junction-Case thermal resistance (Rth J-C) : <135 Minimum Tcase operating temperature(3) : -40 Maximum Tcase operating temperature(3) : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 0.7 0.5 0.4 0.3 0.2 0.1 Pdiss. Max. @Tj <Tj max (W) 0 -50 -25 0 25 50 75 100 125 150 175 Pdiss. Max. @Tj <Tj max (W) 0.6 Tcase Example: QFN 16L 3x3 Location of temperature reference point (Tcase) on package's bottom side Tcase (°C) 6.4 Ref. : DSCHA3565-QAG3199 - 18 Jul 13 3/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Package Sij parameters Tamb.= +25°C, Vd = +5V, Id = 120mA Freq (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 S11 (dB) -0.4 -2.2 -14.3 -29.4 -14.7 -10.1 -9.3 -13.9 -22.2 -13.6 -9.2 -7.5 -7.1 -7.7 -9.6 -13.9 -25.7 -20.9 -15.5 -14.6 -11.8 -7.3 -3.8 -2.2 -1.6 -1.3 -1.0 -0.8 -0.7 PhS11 (°) -86 -149 136 45 -48 -97 -142 144 32 -78 -126 -165 158 121 83 43 -163 -75 -131 145 -49 172 76 15 -26 -57 -82 -104 -123 S21 (dB) -31.3 -1.2 12.9 16.1 16.6 16.3 16.0 15.8 15.4 14.8 14.1 13.5 13.2 13.1 13.1 13.2 13.3 13.3 13.4 13.7 13.2 8.9 1.1 -7.8 -16.9 -25.1 -33.3 -37.1 -37.7 PhS21 (°) -60 -121 99 -6 -100 -170 129 45 -9 -62 -111 -159 154 107 58 7 -46 -102 -159 136 16 -78 -160 134 80 29 -23 -67 -103 S12 (dB) -58.4 -49.4 -43.4 -38.0 -37.4 -37.7 -37.9 -38.1 -38.7 -40.2 -41.7 -43.7 -44.9 -46.0 -46.3 -45.6 -44.1 -41.0 -39.4 -38.0 -39.1 -46.1 -53.6 -53.0 -46.5 -39.3 -42.4 -39.4 -38.2 PhS12 (°) 98 56 41 -26 -94 -144 171 102 56 11 -26 -69 -91 -130 -170 149 106 64 12 -40 -136 131 19 -153 57 -9 -61 -73 -103 S22 (dB) -0.4 -1.4 -5.5 -14.0 -24.5 -15.5 -12.5 -11.7 -12.1 -12.6 -13.1 -15.0 -17.0 -16.5 -13.6 -10.7 -8.7 -7.8 -7.7 -8.3 -11.1 -12.4 -8.6 -5.4 -3.5 -2.4 -1.9 -1.6 -1.6 PhS22 (°) -71 -114 -164 164 -141 -131 -158 163 141 121 96 61 13 -52 -103 -138 13 -13 -40 -68 -139 135 67 24 -10 -40 -69 -96 -123 Refer to the “definition of the Sij reference planes” section below. Ref. : DSCHA3565-QAG3199 - 18 Jul 13 4/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +5V, Id = 120mA Losses due to board are de-embedded. Measurements are given in the QFN’s access plan. Noise, Gain and Return losses versus Frequency 20 15 10 5 Sij & NF (dB) 0 S21 S11 S22 NF -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Ref. : DSCHA3565-QAG3199 - 18 Jul 13 5/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +5V, Id = 120mA Losses due to board are not de-embedded. Measurements are given in the connectors’ access plan. Output power and Gain versus Input power 22 20 18 Gain (dB) & Output power (dBm) 16 14 12 10 8 6 4 2 0 -2 -4 -6 5GHz 9GHz 17GHz 21GHz 13GHz -8 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input power (dBm) Output P-1dB versus Frequency 30 28 Output power at 1dB comp. (dBm) 26 24 22 20 18 16 14 12 10 5 7 9 11 13 15 17 19 21 Frequency (GHz) Ref. : DSCHA3565-QAG3199 - 18 Jul 13 6/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +5V, Id = 120mA Losses due to board are not de-embedded. Measurements are given in the connectors’ access plan. Gain versus temperature 30 25 Gain (dB) 20 15 10 -40°C 25°C +85°C 5 0 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Ref. : DSCHA3565-QAG3199 - 18 Jul 13 7/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +5V, Id = 120mA Losses due to board are not de-embedded. Measurements are given in the connectors’ access plan. C/I3 (dBc) C/I3 versus Output power 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 0 5GHz 7GHz 15GHz 19GHz 2 11GHz 4 6 8 10 12 14 Output power DCL (dBm) C/I3 (dBc) C/I3 versus Input power 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 -12 5GHz 7GHz 15GHz 19GHz -10 11GHz -8 -6 -4 -2 Input power DCL (dBm) Ref. : DSCHA3565-QAG3199 - 18 Jul 13 8/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +5V, Id = 120mA Losses due to board are not de-embedded. Measurements are given in the connectors’ access plan. 60 56 52 48 44 40 36 32 28 24 20 C/I3 versus input power and Temperature at 9GHz C/I3 (dBc) C/I3 (dBc) C/I3 versus input power and Temperature at 5GHz -40°C -12 -10 25°C 85°C -8 -6 Input power DCL (dBm) -4 60 56 52 48 44 40 36 32 28 24 20 -2 -40°C -12 60 56 52 48 44 40 36 32 28 24 20 -40°C -12 -10 25°C 85°C -8 -6 Input power DCL (dBm) Ref. : DSCHA3565-QAG3199 - 18 Jul 13 -4 85°C -8 -6 Input power DCL (dBm) -4 -2 C/I3 versus input power and Temperature at 15GHz C/I3 (dBc) C/I3 (dBc) C/I3 versus input power and Temperature at 11GHz -10 25°C -2 9/14 60 56 52 48 44 40 36 32 28 24 20 -40°C -12 -10 25°C 85°C -8 -6 Input power DCL (dBm) -4 -2 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Package outline (1) Matt tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 17- GND 12345678- Gnd(2) RF in Gnd(2) Nc VG Nc Nc Nc 910111213141516- Nc Nc RF out Gnd(2) VD Nc Nc Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA3565-QAG3199 - 18 Jul 13 10/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". Ref. : DSCHA3565-QAG3199 - 18 Jul 13 11/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. ■ See application note AN0017 for details. Ref. : DSCHA3565-QAG3199 - 18 Jul 13 12/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Notes Ref. : DSCHA3565-QAG3199 - 18 Jul 13 13/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3565-QAG 5-21GHz Driver Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 3x3 RoHS compliant package: CHA3565-QAG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3565-QAG3199 - 18 Jul 13 14/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34