AP95T07BGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
75V
RDS(ON)
5mΩ
ID
125A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
125
A
100
A
78
A
400
A
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
138.9
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.9
℃/W
62
℃/W
1
201012281
AP95T07BGP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
75
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=60A
-
-
5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
90
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=40A
-
96
154
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=60V
-
25
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
40
-
nC
2
td(on)
Turn-on Delay Time
VDS=40V
-
20
-
ns
tr
Rise Time
ID=40A
-
70
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
37
-
ns
tf
Fall Time
VGS=10V
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
5100 8160
pF
Coss
Output Capacitance
VDS=25V
-
700
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
340
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
55
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
110
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 100A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T07BGP-HF
300
200
T C = 150 C
10V
8.0V
7.0V
6.0V
160
ID , Drain Current (A)
250
ID , Drain Current (A)
o
10V
8.0V
7.0V
o
T C = 25 C
200
6.0V
150
100
V GS =5.0V
120
V GS =5.0V
80
40
50
0
0
0
8
16
24
0
32
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.6
I D =1mA
I D =60A
V G =10V
1.4
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.2
1
0.8
1.6
1.2
0.8
0.6
0.4
0.4
-50
0
50
100
-50
150
0
o
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
40
Normalized VGS(th) (V)
I D =1mA
IS(A)
30
T j =150 o C
T j =25 o C
20
1.2
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T07BGP-HF
f=1.0MHz
8000
I D =40A
V DS =60V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
4000
4
2000
2
C oss
C rss
0
0
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
Operation in this area
limited by RDS(ON)
ID (A)
100
100us
1ms
10
10ms
100ms
DC
o
T c =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4