IS61SF25616 IS61SF25618 ISSI ® 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM APRIL 2001 FEATURES DESCRIPTION • • • • The ISSI IS61SF25616 and IS61SF25618 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. It is organized as 262,144 words by 16 bits and 18 bits, fabricated with ISSI's advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. • • • • • • Fast access times: 8 ns, 8.5 ns, 10 ns, and 12 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals PentiumTM or linear burst sequence control using MODE input Three chip enables for simple depth expansion and address pipelining Common data inputs and data outputs JEDEC 100-Pin TQFP and 119-pin PBGA package Single +3.3V +10%, –5% power supply Power-down snooze mode Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. BW1 controls DQ1-8, BW2 controls DQ9-16, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written. Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally by the IS61SF25616 and controlled by the ADV (burst address advance) input pin. The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating. FAST ACCESS TIME Symbol tKQ t KC Parameter Clock Access Time Cycle Time Frequency 8 8 10 100 8.5 8.5 11 90 10 10 15 66 12 12 15 66 Units ns ns MHz ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 1 IS61SF25616 IS61SF25618 ISSI ® BLOCK DIAGRAM MODE ADV CLK BURST COUNTER ADSC CLK2 2 18 256K x 16, 256K x 18 MEMORY ARRAY CLR ADSP A2-A17 A1 A0 2 18 16 ADDRESS REGISTER 16 or 18 GW 16 or 18 BWE BW1 BW2 BW1 BYTE WRITE REGISTER BW2 BYTE WRITE REGISTER 2 DATA INPUT REGISTER CLK CLK2 CE1 CE2 ENABLE REGISTER CLK ENABLE REGISTER CE2 OE DQ1-DQ16 or DQ1-DQ18 2 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® PIN CONFIGURATION 100-Pin TQFP 1 2 3 4 5 6 7 VCCQ A6 A4 ADSP A8 A16 VCCQ A B NC CE2 A3 ADSC A9 CE2 NC NC A7 A2 VCC A12 A15 NC DQ9 NC GND NC GND NC NC NC DQ10 GND CE GND NC DQ8 VCCQ NC GND OE GND DQ7 VCCQ NC DQ11 BW2 ADV GND NC DQ6 DQ12 NC GND GW GND DQ5 NC VCCQ VCC NC VCC NC VCC VCCQ NC DQ13 GND CLK GND NC DQ4 DQ14 NC GND NC BW1 DQ3 NC VCCQ DQ15 GND BWE GND NC VCCQ DQ16 NC GND A1 GND DQ2 NC NC NC GND A0 GND NC DQ1 NC A5 MODE VCC GND A13 NC NC A11 A10 NC A14 A17 ZZ VCCQ NC NC NC NC NC VCCQ C D E F G H J K L M N P R T A6 A7 CE CE2 NC NC BW2 BW1 CE2 VCC GND CLK GW BWE OE ADSC ADSP ADV A8 A9 119-pin PBGA (Top View) NC NC NC VCCQ GND NC NC DQ9 DQ10 GND VCCQ DQ11 DQ12 GND VCC NC GND DQ13 DQ14 VCCQ GND DQ15 DQ16 NC NC GND VCCQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 1 79 2 78 3 77 4 76 5 75 6 74 7 73 8 72 9 71 10 70 11 69 12 68 13 67 14 66 15 65 16 64 17 63 18 62 19 61 20 60 21 59 22 58 23 57 24 56 25 55 26 54 27 53 28 52 29 51 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 MODE A5 A4 A3 A2 A1 A0 NC NC GND VCC NC NC A10 A11 A12 A13 A14 A15 A16 U A17 NC NC VCCQ GND NC NC DQ8 DQ7 GND VCCQ DQ6 DQ5 GND NC VCC ZZ DQ4 DQ3 VCCQ GND DQ2 DQ1 NC NC GND VCCQ NC NC NC 256K x 16 PIN DESCRIPTIONS A0, A1 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADSP Synchronous Processor Address Status BWE Synchronous Byte Write Enable GW Synchronous Global Write Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQ1-DQ16 Synchronous Data Input/Output MODE Burst Sequence Mode Selection Synchronous Controller Address Status VCC +3.3V Power Supply GND Ground ADV Synchronous Burst Address Advance VCCQ Isolated Output Buffer Supply: +3.3V BW1-BW2 Synchronous Byte Write Enable ZZ Snooze Enable ADSC Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 3 IS61SF25616 IS61SF25618 ISSI 100-Pin TQFP A6 A7 CE CE2 NC NC BW2 BW1 CE2 VCC GND CLK GW BWE OE ADSC ADSP ADV A8 A9 119-pin PBGA (Top View) 1 2 3 4 5 6 7 VCCQ A6 A4 ADSP A8 A16 VCCQ NC CE2 A3 ADSC A9 CE2 NC NC A7 A2 VCC A12 A15 NC DQ9 NC GND NC GND DQP1 NC NC DQ10 GND CE GND NC DQ8 VCCQ NC GND OE GND DQ7 VCCQ NC DQ11 BW2 ADV GND NC DQ6 DQ12 NC GND GW GND DQ5 NC VCCQ VCC NC VCC NC VCC VCCQ NC DQ13 GND CLK GND NC DQ4 DQ14 NC GND NC BW1 DQ3 NC VCCQ DQ15 GND BWE GND NC VCCQ DQ16 NC GND A1 GND DQ2 NC NC DQP2 GND A0 GND NC DQ1 NC A5 MODE VCC GND A13 NC NC A11 A10 NC A14 A17 ZZ VCCQ NC NC NC NC NC VCCQ A B C D E F G H J K L M ® N P R T A17 NC NC VCCQ GND NC DQP1 DQ8 DQ7 GND VCCQ DQ6 DQ5 GND NC VCC ZZ DQ4 DQ3 VCCQ GND DQ2 DQ1 NC NC GND VCCQ NC NC NC MODE A5 A4 A3 A2 A1 A0 NC NC GND VCC NC NC A10 A11 A12 A13 A14 A15 A16 U 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 1 79 2 78 3 77 4 76 5 75 6 74 7 73 8 72 9 71 10 70 11 69 12 68 13 67 14 66 15 65 16 64 17 63 18 62 19 61 20 60 21 59 22 58 23 57 24 56 25 55 26 54 27 53 28 52 29 51 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC NC VCCQ GND NC NC DQ9 DQ10 GND VCCQ DQ11 DQ12 GND VCC NC GND DQ13 DQ14 VCCQ GND DQ15 DQ16 DQP2 NC GND VCCQ NC NC NC 256K x 18 PIN DESCRIPTIONS A0, A1 4 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADSP Synchronous Processor Address Status GW Synchronous Global Write Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQ1-DQ16 Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply ADSC Synchronous Controller Address Status GND Ground VCCQ Isolated Output Buffer Supply: 3.3V ADV Synchronous Burst Address Advance ZZ Snooze Enable BW1-BW2 Synchronous Byte Write Enable DQP1-DQP2 BWE Synchronous Byte Write Enable Parity Data I/O DQP1 is parity for DQ1-8; DQP2 is parity for DQ9-16 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® TRUTH TABLE Operation Address Used CE Deselected, Power-down Deselected, Power-down Deselected, Power-down Deselected, Power-down Deselected, Power-down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst None None None None None External External External Next Next Next Next Next Next Current Current Current Current Current Current CE2 CE2 ADSP ADSC ADV WRITE OE DQ H L L X X L L L X X H H X H X X H H X H X X L X L H H H X X X X X X X X X X X X X H X H X L L L X X X X X X X X X X X X X L L H H L H H H H X X H X H H X X H X L X X L L X L L H H H H H H H H H H H H X X X X X X X X L L L L L L H H H H H H X X X X X X Read Write Read Read Read Read Write Write Read Read Read Read Write Write X X X X X X X X L H L H X X L H L H X X High-Z High-Z High-Z High-Z High-Z Q Q D Q High-Z Q High-Z D D Q High-Z Q High-Z D D PARTIAL TRUTH TABLE Function Read Read Write Byte 1 Write All Bytes Write All Bytes GW BWE BW1 BW2 H H H H L H L L L X X H L L X X H H L X Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 5 IS61SF25616 IS61SF25618 ISSI ® INTERLEAVED BURST ADDRESS TABLE (MODE = VCC or No Connect) External Address A1 A0 1st Burst Address A1 A0 2nd Burst Address A1 A0 3rd Burst Address A1 A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 LINEAR BURST ADDRESS TABLE (MODE = GND) 0,0 A1', A0' = 1,1 0,1 1,0 ABSOLUTE MAXIMUM RATINGS(1) Symbol TBIAS TSTG PD IOUT VIN, VOUT VIN Parameter Temperature Under Bias Storage Temperature Power Dissipation Output Current (per I/O) Voltage Relative to GND for I/O Pins Voltage Relative to GND for for Address and Control Inputs VCC Voltage on Vcc Supply Relatiive to GND Value Unit –40 to +85 °C –55 to +150 °C 1.6 W 100 mA –0.5 to VCCQ + 0.3 V –0.5 to VCC + 0.5 V –0.5 to 4.6 V Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit. 3. This device contains circuitry that will ensure the output devices are in High-Z at power up. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® OPERATING RANGE Range Commercial Ambient Temperature 0°C to +70°C VCC 3.3V +10%, –5% –40°C to +85°C 3.3V +10%, –5% Industrial DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage IOL = 8.0 mA — 0.4 V VIH Input HIGH Voltage 2.0 VCC + 0.3 V VIL Input LOW Voltage –0.3 0.8 V ILI Input Leakage Current GND ≤ VIN ≤ VCCQ(2) Com. Ind. –2 –5 2 5 µA ILO Output Leakage Current GND ≤ VOUT ≤ VCCQ, OE = VIH Com. Ind. –2 –5 2 5 µA POWER SUPPLY CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions 8 Max. 8.5 Max. 10 Max. 12 Max. Unit ICC AC Operating Supply Current Device Selected, All Inputs = VIL or VIH OE = VIH, Vcc = Max. Cycle Time ≥ tKC min. Com. Ind. 180 — 170 180 160 170 150 160 mA ISB Standby Current Device Deselected, Com. VCC = Max., Ind. All Inputs = VIH or VIL CLK Cycle Time ≥ tKC min. 50 — 50 60 50 60 50 60 mA IZZ Power-down Mode Current ZZ = VCCQ Com. Clock Running Ind. All Inputs ≤ GND + 0.2V or ≥ Vcc – 0.2V 10 — 10 15 10 15 10 15 mA Notes: 1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC. 2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to ≤ GND + 0.2V or ≥ Vcc – 0.2V. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 7 IS61SF25616 IS61SF25618 ISSI ® CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance COUT Input/Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 1.5 ns 1.5V See Figures 1 and 2 AC TEST LOADS 317 Ω 3.3V ZO = 50Ω OUTPUT Output Buffer 30 pF 50Ω 1.5V Figure 1 8 5 pF Including jig and scope 351 Ω Figure 2 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) 8 Symbol Parameter fMAX(3) 8.5 10 12 Min. Max. Min. Max. Min. Max. Min. Max. Unit Clock Frequency — 100 — 90 — 66 — 66 MHz tKC Cycle Time 10 — 11 — 15 — 15 — ns tKH Clock High Time 4 — 4.5 — 4.5 — 4.5 — ns tKL(3) Clock Low Time 4 — 4.5 — 4.5 — 4.5 — ns Clock Access Time — 8 — 8.5 — 10 — 12 ns Clock High to Output Invalid 2 — 2 — 2 — 2 — ns tKQLZ Clock High to Output Low-Z 0 — 0 — 0 — 0 — ns tKQHZ(1,2) Clock High to Output High-Z 2 3.5 2 3.5 2 3.5 2 3.5 ns (3) (3) tKQ (1) tKQX (1,2) (3) tOEQ Output Enable to Output Valid — 3.5 — 3.5 — 3.5 — 5 ns (1,2) Output Enable to Output Low-Z 0 — 0 — 0 — 0 — ns (1,2) tOEHZ Output Disable to Output High-Z — 3.5 — 3.5 — 3.5 — 3.5 ns tAS(3) Address Setup Time 2 — 2 — 2 — 4 — ns tSS(3) Address Status Setup Time 2 — 2 — 2 — 4 — ns Write Setup Time 2 — 2 — 2 — 4 — ns tCES Chip Enable Setup Time 2 — 2 — 2 — 4 — ns tAVS(3) Address Advance Setup Time 2 — 2 — 2 — 4 — ns tOELZ (3) tWS (3) (3) Address Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns (3) Address Status Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns (3) Write Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns Address Advance Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tAH tSH tWH tCEH(3) (3) tAVH Notes: 1. Guaranteed but not 100% tested. This parameter is periodically sampled. 2. Tested with load in Figure 2. 3. Tested with load in Figure 1. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 9 IS61SF25616 IS61SF25618 ISSI ® READ/WRITE CYCLE TIMING tKC CLK tSS tSH tKH tKL ADSP is blocked by CE inactive ADSP tSS tSH ADSC ADV tAS A17-A0 tAH RD1 WR1 tWS tWH tWS tWH RD2 RD3 GW BWE tWS tWH WR1 BW2-BW1 tCES tCEH tCES tCEH tCES tCEH CE Masks ADSP CE CE2 and CE2 only sampled with ADSP or ADSC CE2 Unselected with CE2 CE2 tOEHZ OE tKQX tOEQX DATAOUT High-Z 2c 2d tKQHZ tKQHZ 1a High-Z tDS Single Read Flow-through 10 2b tKQX tKQ DATAIN 2a 1a tKQLZ tDH Single Write Burst Read Unselected Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) 8 8.5 Min. Max. Symbol Parameter Min. Max. (1) tKC Cycle Time 10 — 11 tKH(1) Clock High Time 4 — tKL(1) 10 12 Min. Max. Min. Max. Unit — 15 — 15 — ns 4.5 — 4.5 — 4.5 — ns Clock Low Time 4 — 4.5 — 4.5 — 4.5 — ns (1) Address Setup Time 2 — 2 — 2 — 4 — ns (1) Address Status Setup Time 2 — 2 — 2 — 4 — ns Write Setup Time 2 — 2 — 2 — 4 — ns tAS tSS tWS(1) (1) tDS Data In Setup Time 2 — 2 — 2 — 4 — ns (1) Chip Enable Setup Time 2 — 2 — 2 — 4 — ns (1) tAVS Address Advance Setup Time 2 — 2 — 2 — 4 — ns tAH(1) tCES Address Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns (1) Address Status Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns (1) Data In Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns (1) tWH Write Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tCEH(1) Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tAVH(1) Address Advance Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tSH tDH Notes: 1. Tested with load in Figure 1. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 11 IS61SF25616 IS61SF25618 ISSI ® WRITE CYCLE TIMING tKC CLK tSS tSH tKH tKL ADSP is blocked by CE1 inactive ADSP ADSC initiate Write ADSC ADV must be inactive for ADSP Write tAVS tAVH ADV tAS A17-A0 tAH WR1 WR3 WR2 tWS tWH tWS tWH tWS tWH GW BWE BW2-BW1 WR1 tCES tCEH tCES tCEH tCES tCEH tWS tWH WR2 WR3 CE1 Masks ADSP CE Unselected with CE2 CE2 and CE3 only sampled with ADSP or ADSC CE2 CE2 OE DATAOUT High-Z tDS DATAIN High-Z Single Write 12 tDH 1a BW4-BW1 only are applied to first cycle of WR2 2a 2b 2c 2d Burst Write 3a Write Unselected Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) 8 8.5 10 12 Min. Max. Symbol Parameter Min. Max. Min. Max. Min. Max. (3) tKC Cycle Time 10 — 11 — 15 — 15 — ns tKH(3) Clock High Time 4 — 4.5 — 4.5 — 4.5 — ns tKL(3) Clock Low Time 4 — 4.5 — 4.5 — 4.5 — ns Clock Access Time — 8 — 8.5 — 10 — 12 ns Clock High to Output Invalid 2 — 2 — 2 — 2 — ns Clock High to Output Low-Z 0 — 0 — 0 — 0 — ns Clock High to Output High-Z 2 3.5 2 3.5 2 3.5 2 3.5 ns Output Enable to Output Valid — 3.5 — 3.5 — 3.5 — 5 ns tOELZ Output Enable to Output Low-Z 0 — 0 — 0 — 0 — ns tOEHZ(1,2) (3) tKQ (1) tKQX tKQLZ(1,2) (1,2) tKQHZ (3) tOEQ (1,2) Unit Output Disable to Output High-Z — 3.5 — 3.5 — 3.5 — 3.5 ns (3) Address Setup Time 2 — 2 — 2 — 4 — ns (3) Address Status Setup Time 2 — 2 — 2 — 4 — ns tCES Chip Enable Setup Time 2 — 2 — 2 — 4 — ns tAH(3) Address Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tSH(3) Address Status Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tCEH Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 1.5 — ns tZZS ZZ Standby 2 — 2 — 2 — 2 — cyc tZZREC ZZ Recovery 2 — 2 — 2 — 2 — cyc tAS tSS (3) (3) Notes: 1. Guaranteed but not 100% tested. This parameter is periodically sampled. 2. Tested with load in Figure 2. 3. Tested with load in Figure 1. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 13 IS61SF25616 IS61SF25618 ISSI ® SNOOZE AND RECOVERY CYCLE TIMING tKC CLK tSS tSH tAS tAH tKH tKL ADSP ADSC ADV A17-A0 RD2 RD1 GW BWE BW2-BW1 tCES tCEH tCES tCEH tCES tCEH CE CE2 CE2 tOEHZ tOEQ OE tOEQX tOELZ DATAOUT High-Z 1a tKQLZ tKQ DATAIN tKQX tKQHZ High-Z tZZS tZZREC ZZ Single Read 14 Snooze with Data Retention Read Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 IS61SF25616 IS61SF25618 ISSI ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Frequency 8 Order Part Number Package IS61SF25616-8TQ IS61SF25616-8B TQFP PBGA 8.5 IS61SF25616-8.5TQ IS61SF25616-8.5B TQFP PBGA 10 IS61SF25616-10TQ IS61SF25616-10B TQFP PBGA 12 IS61SF25616-12TQ IS61SF25616-12B TQFP PBGA Industrial Range: –40°C to +85°C Frequency Order Part Number Package 8.5 IS61SF25616-8.5TQI TQFP 10 IS61SF25616-10TQI TQFP 12 IS61SF25616-12TQI TQFP Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01 15 IS61SF25616 IS61SF25618 ISSI ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Frequency 8 Order Part Number Package IS61SF25618-8TQ IS61SF25618-8B TQFP PBGA 8.5 IS61SF25618-8.5TQ IS61SF25618-8.5B TQFP PBGA 10 IS61SF25618-10TQ IS61SF25618-10B TQFP PBGA 12 IS61SF25618-12TQ IS61SF25618-12B TQFP PBGA Industrial Range: –40°C to +85°C Frequency Order Part Number Package 8.5 IS61SF25618-8.5TQI TQFP 10 IS61SF25618-10TQI TQFP 12 IS61SF25618-12TQI TQFP ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: [email protected] www.issi.com 16 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 04/17/01