Panasonic MA4X713 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
Unit: mm
2.90+0.02
–0.05
For switching
For wave detection
1.9±0.2
0.16+0.1
–0.06
(0.95) (0.95)
4
2
1
0.60+0.10
–0.05
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak forward
Single
IFM
150
mA
current
Double *
Forward current (DC)
Single
Double
IF
30
mA
Internal Connection
20
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
Marking Symbol: M1N
110
*
1.1+0.3
–0.1
10°
+0.2
0 to 0.1 1.1–0.1
Symbol
0.4±0.2
(0.65)
(0.2)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
0.5R
2.8+0.2
–0.3
3
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Mini type 4-pin package
1.50+0.25
–0.05
■ Features
3
4
2
1
Note) *: Value per chip
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
1
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00103AED
1
MA4X713
Characteristics charts between pins 1 and 4, 2 and 3
IF  V F
IR  V R
75°C 25°C
10
1
1
10
2
0
0.2
0.4
0.6
0.8
1.0
1.0
102
−20°C
Ta = 125°C
Reverse current IR (µA)
Forward current IF (mA)
102
10
VF  Ta
103
1.2
0.8
Ta = 125°C
10
75°C
1
25°C
10
1
10
2
0
5
10
15
20
25
30
Reverse voltage VR (V)
IR  T a
Ct  VR
Reverse current IR (µA)
10
1
10
10
1
0
40
80
120
160
Ambient temperature Ta (°C)
2
2
1
0
2
−40
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
VR = 30 V
15 V
200
0.4
3 mA
1 mA
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00103AED
0
−40
0
40
80
120
Ambient temperature Ta (°C)
3
102
IF = 30 mA
0.6
0.2
Forward voltage VF (V)
103
Forward voltage VF (V)
103
30
160
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2001 MAR
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