SECURITY CODE A Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura F S.Iura G S.Iura R H.Yamaguchi I.Umezaki I.Umezaki E M.Yamamoto H.Yamaguchi H.Yamaguchi V 7-Oct.-2002 18-May-2004 20-May-2004 H S.Iura I.Umezaki H.Yamaguchi 5-Oct.-2004 HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION 1. Type Number CM600HG-130H 2. Structure Flat base type (Insulated package, AlSiC base plate) 3. Application & Customer High power converters & Inverters for traction application 4. Outline See Fig. 1 5. Related Specifications Fig. 1 - Outline drawing HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 1/7 MITSUBISHI ELECTRIC CORPORATION 6. Maximum Ratings Item Symbol Conditions VGE = 0 V, Tj = −40 °C VGE = 0 V, Tj = +25 °C VGE = 0 V, Tj = +125 °C Ratings 5800 6300 6500 Unit 6.1 Collector-emitter voltage VCES 6.2 Gate-emitter voltage VGES VCE = 0 V, Tj = 25 °C ± 20 6.3 Collector current DC, Tc = 80 °C Pulse (note 1) 6.4 Emitter current (note 2) IC ICM IE IEM Pulse (note 1) 600 1200 600 1200 6.5 Maximum Collector dissipation PC Tc = 25 °C, IGBT part (note 3) 8900 W 6.6 Isolation voltage Viso Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 10200 V 6.7 Partial discharge Qpd V1 = 6900 Vrms, V2 = 5100 Vrms 60 Hz (acc. to IEC 1287) 10 6.8 Junction temperature Tj — −40 ~ +150 °C 6.9 Storage temperature Tstg — −40 ~ +125 °C Top — −40 ~ +125 °C 6.10 Operating temperature 6.11 Maximum turn-off switching current — 6.12 Short circuit capability (maximum pulse width) — 6.13 Maximum reverse recovery instantaneous power (note 2) — Note 1. Note 2. Note 3. 7. VCC ≤ 4500 V VGE = ±15 V, Tj = 125 °C V V A A pC 1200 A 10 µs 3600 kW [See Fig. 2 (a)] VCC ≤ 4500 V VGE = ±15 V, Tj = 125 °C [See Fig. 2 (b)] VCC ≤ 4500 V die/dt ≤ 3000 A/µs, Tj = 125 °C [See Fig. 2 (a)] Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Electrical Characteristics Item Symbol Limits Conditions Tj = 25 °C Unit Min. Typ. Max. — — — 30 10 90 mA 7.1 Collector cutoff current ICES VCE = VCES VGE = 0 V 7.2 Gate-emitter threshold voltage VGE(th) IC = 60 mA, VCE = 10 V Tj = 25 °C 5.0 6.0 7.0 V 7.3 Gate leakage current IGES VGE = VGES, VCE = 0 V Tj = 25 °C — — 0.5 µA HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H Tj = 125 °C (HV-SETSU) PAGE 2/7 MITSUBISHI ELECTRIC CORPORATION Item Symbol Limits Conditions Unit Min. Typ. Max. IC = 600 A (note 4) Tj = 25 °C VGE = 15 V Tj = 125 °C — — 5.10 5.00 — — V VCE = 10 V, VGE = 0 V — 124 — nF VCE = 10 V, VGE = 0 V — 7.6 — nF 7.4 Collector-emitter saturation voltage VCE(sat) 7.5 Input capacitance Cies 7.6 Output capacitance Coes 7.7 Reverse transfer capacitance Cres VCE = 10 V, VGE = 0 V f = 100 kHz, Tj = 25 °C — 2.2 — nF 7.8 Total gate charge QG VCC = 3600 V, IC = 600 A VGE = 15 V, Tj = 25 °C — 9.9 — µC 7.9 Emitter-collector voltage (note 2) VEC IE = 600 A (note 4) VGE = 0 V — — 4.00 3.60 — — V — 1.20 — µs — 0.35 — µs — 4.50 — J/P — 6.60 — µs — 0.50 — µs — 3.30 — µs — 3.50 — J/P — 1.00 — µs — 2.40 — µs — 1100 — µC — 2.00 — J/P 7.10 Turn-on delay time td(on) 7.11 Turn-on rise time tr 7.12 Turn-on switching energy Eon 7.13 Turn-off delay time td(off) 7.14 Turn-off fall time tf1 7.15 Turn-off fall time tf2 f = 100 kHz, Tj = 25 °C f = 100 kHz, Tj = 25 °C Tj = 25 °C Tj = 125 °C VCC = 3600 V, IC = 600 A VGE1 = −VGE2 = 15 V RG(on) = 10 Ω, Tj = 125 °C toff = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 3] VCC = 3600 V, IC = 600 A VGE1 = −VGE2 = 15 V RG(off) = 24 Ω, Tj = 125 °C t(IGBT_off) = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 3] 7.16 Turn-off switching energy Eoff 7.17 Reverse recovery time (note 2) trr1 7.18 Reverse recovery time (note 2) trr2 7.19 Reverse recovery charge (note 2) Qrr VCC = 3600 V, IE = 600 A die/dt = −2000 A/µs Tj = 125 °C toff = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 4] 7.20 Reverse recovery energy Note 4. Note 5. (note 2) Erec Pulse width and repetition rate should be such as to cause negligible temperature rise. t(IGBT_off) definition is shown as follows. IC time t(IGBT_off) HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 3/7 MITSUBISHI ELECTRIC CORPORATION 8. Thermal Characteristics Item Symbol Limits Conditions Min. Typ. Max. Unit 8.1 Thermal resistance Rth(j-c)Q Junction to case IGBT part — — 14.0 K/kW 8.2 Thermal resistance (note 2) Rth(j-c)R Junction to case FWDi part — — 22.0 K/kW 8.3 Contact thermal resistance Rth(c-f) Case to fin Conductive grease applied — 6.0 — K/kW (note 6) Note 6. 9. Thermal conductivity is 1W/mK with a thickness of 100µm. Mechanical Characteristics Item Symbol Limits Conditions Min. Typ. Max. Unit 9.1 Mounting torque — Main terminal screw : M8 7.0 — 15.0 N·m 9.2 Mounting torque — Mounting screw : M6 3.0 — 6.0 N·m 9.3 Mounting torque — Auxiliary terminal screw : M4 1.0 — 3.0 N·m 9.4 Mass — — — 1.35 — kg 9.5 Comparative tracking index CTI — 600 — — — 9.6 Clearance — — 26.0 — — mm 9.7 Creepage distance — — 56.0 — — mm 9.8 Internal inductance LC-E(int) — — 18 — nH 9.9 Internal lead resistance RC-E(int) — 0.18 — mΩ Tc = 25 °C 10. Shipping Inspection Report Item (note 7) Static characteristics : ICES [7.1], VGE(th) [7.2], IGES [7.3], VCE(sat) [7.4], VEC [7.9] Switching characteristics : td(on) [7.10], tr [7.11], td(off) [7.13], tf [7.14], Short circuit current [6.11] Note 7. One shipping inspection report with the above item values is submitted when modules are delivered. The conductions are defined in bracket. HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 4/7 MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of Switching Characteristics LS1 = 500 nH DUT: diode Rg LS2 = 150 nH V GE3 LLOAD C = 1 mF V CC DUT: IGBT Rg V GE1 CS = 25 uF V GE2 Fig. 2 (a) – Switching test circuit LS = 100 nH CS = 25 uF C = 1 mF V CC DUT: IGBT Rg V GE1 V GE2 Fig. 2 (b) – Short circuit test circuit HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 5/7 MITSUBISHI ELECTRIC CORPORATION IGBT part: turn-on switching IGBT part: turn-off switching 90%VGE VGE 10%VGE 0 VCC IC 90%IC 90%IC di 50%IC 10%IC 10%VCE 10%VCE VCE td(on) tr td(off) ton Eon = t1 ∫ 10%IC dt 0 tf2 t2 ic•vce dt toff Eoff = t1 t2 t3 t4 ∫ t4 ic•vce dt t3 tf1 = (0.9ic − 0.1ic) / (di/dt) Fig. 3 – Definitions of switching times & energies of IGBT part Diode part: reverse recovery Qrr = – IE (IF) di/dt ∫ t6 VEC (VR) trr1 di 0 10%IE Erec = – ∫ ie dt 0 t6 ie•vec dt t5 Irr dt 0 10%VEC trr2 t5 t6 Fig. 4 – Definitions of reverse recovery charge & energy of FWDi part HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 6/7 MITSUBISHI ELECTRIC CORPORATION Rev. No. Signature & date S.Iura 7-Oct.-2002 Summary of changes − Original A The following items changed. 6.1, 6.3, 6.4 S.Iura 20-Dec.-2002 B The following item changed. 6.3 The following item added. 6.6 S.Iura 31-Mar.-2003 The following items changed. 7.4, 7.9, 7.17 The following items added. 6.11, 6.12, 6.13, 7.10, 7.11, 7.12, 7.13, 7.14, 7.15, 8.3, 9.1, 9.2, 9.3, 9.4, 9.5, 9.6, 9.7, 10 S.Iura 10-Dec.-2003 The following items changed. 4, 7.9, 7.10, 7.11, 7.14, 7.15, 7.16, 7.17, 7.18 The following items added. 7.5, 7.6, 7.7, 10 S.Iura 22-Jan.-2004 The following items changed. 7.4, 7.9, 7.16 The following items added. 7.14, 7.17, 9.9, Note 5, Fig. 2 (a), Fig. 2 (b) S.Iura 26-Jan.-2004 The following items changed. 7.13, 7.15, 7.16, 7.20 The following items added. 9.8 S.Iura 17-May-2004 G The following item changed. 6.13 S.Iura 20-May-2004 H The following items changed. C D E F S.Iura 1-Oct.-2004 7.2, 7.4, 7.8, 7.9, 7.13, 7.15, 7.16, 7.19, 7.20, 8.2, 9.1, 9.3, 9.4 HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 7/7