CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S CEF SERIES TO-220F ID IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C TO-220F 200 Units V ±20 V 19 19 d d A A 76 76 125 40 W 1.0 0.32 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.0 3.1 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 3. 2008.Oct. http://www.cetsemi.com Details are subject to change without notice . 1 CEPF640/CEBF640 CEFF640 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 200 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 160V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 0.150 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 10A Dynamic Characteristics c Forward Transconductance gFS VDS = 10V, ID = 9A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance VDS = 25V, VGS = 0V, f = 1.0 MHz 2 0.125 9 S 1955 pF 355 pF 55 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 100V, ID = 11A, VGS = 10V, RGEN = 9.1Ω 21 42 ns 5 10 ns 66 132 ns Turn-Off Fall Time tf 11 22 ns Total Gate Charge Qg 44 57 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 160V, ID = 19A, VGS = 10V 8 nC 14 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS f b VSD VGS = 0V, IS = 19A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 10.5A . g.Full package VSD test condition IS = 10.5A . i.L = 1mH, IAS = 25A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 2 19 A 1.5 V 4 CEPF640/CEBF640 CEFF640 40 10 VGS=10,9,8,7V ID, Drain Current (A) ID, Drain Current (A) 12 8 6 VGS=6V 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 10 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1500 1000 Coss 500 Crss 0 5 10 15 20 25 3.0 2.5 4 5 6 7 8 ID=10A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 2. Transfer Characteristics IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 20 Figure 1. Output Characteristics 2000 1.2 TJ=125 C VGS, Gate-to-Source Voltage (V) 2500 1.3 -55 C VDS, Drain-to-Source Voltage (V) 3000 0 30 0 3.0 25 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=160V ID=19A 8 6 4 2 0 8 16 24 32 40 48 56 64 10ms 100ms 1ms 10 1 10ms DC 10 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEPF640/CEBF640 CEFF640 TC=25 C TJ=150 C Single Pulse 0 10 0 10 1 10 2 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 10 0.1 -1 PDM 0.05 0.02 0.01 Single Pulse t1 -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 4