AP09N90CW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Minimize On-resistance
▼ Fast Switching
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
900V
RDS(ON)
1.4Ω
ID
7.6A
S
Description
AP09N90C series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
G
TO-3P
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
7.6
A
ID@TC=100℃
Drain Current, VGS @ 10V
4.8
A
1
IDM
Pulsed Drain Current
25
A
PD@TC=25℃
Total Power Dissipation
208
W
Linear Derating Factor
1.6
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.6
℃/W
40
℃/W
1
201501125
AP09N90CW-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
900
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.74
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=3.6A
-
1.25
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.6A
-
3.6
-
S
IDSS
Drain-Source Leakage Current
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=720V, VGS=0V
-
-
500
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=7.2A
-
50.7
80
nC
Qgs
Gate-Source Charge
VDS=540V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
16
-
nC
td(on)
Turn-on Delay Time
VDD=450V
-
20
-
ns
tr
Rise Time
ID=7.2A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω
-
65
-
ns
tf
Fall Time
VGS=10V
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
3097
5000
pF
Coss
Output Capacitance
VDS=15V
-
516
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
19
-
pF
Min.
Typ.
VGS=0V, ID=1mA
o
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=7.2A, VGS=0V
-
-
1.5
A
trr
Reverse Recovery Time
IS=7.2A, VGS=0V,
-
673
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9.6
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N90CW-HF
5
10
o
T C =150 C
6
4.5V
4
2
10V
7.0V
5.0V
4.5V
4
ID , Drain Current (A)
8
ID , Drain Current (A)
o
10V
7.0V
5.0V
T C =25 C
3
2
V G =4.0V
1
V G =4.0V
0
0
0
2
4
6
8
10
12
14
16
18
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
14
16
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
I D =3.6A
2.5
V G =10V
Normalized RDS(ON)
Normalized BVDSS
1.1
1
2.0
1.5
1.0
0.9
0.5
0.0
0.8
-50
0
50
100
-50
150
Fig 3. Normalized BVDSS v.s. Junction
10
3
VGS(th) (V)
4
IS (A)
50
100
150
Fig 4. Normalized On-Resistance
100
T j = 150 o C
0
T j , Junction Temperature ( o C)
Junction Temperature ( o C)
T j = 25 o C
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N90CW-HF
15
f=1.0MHz
10000
12
Ciss
V DS =180V
V DS =360V
V DS =540V
9
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =7.2A
Coss
6
100
3
Crss
10
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
DUTY=0.5
10
ID (A)
100us
1ms
10ms
1
100ms
o
T c =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP09N90CW-HF
MARKING INFORMATION
Part Number
09N90CW
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5