CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. • Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz • Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz • Five Independent Transistors on a Common Substrate Applications • VHF Amplifiers Ordering Information • Multifunction Combinations - RF/Mixer/Oscillator • Sense Amplifiers PART NUMBER (BRAND) • Synchronous Detectors TEMP. RANGE (oC) PACKAGE PKG. NO. • VHF Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC M16.15 CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel M16.15 • IF Converter • IF Amplifiers • Synthesizers • Cascade Amplifiers Pinout CA3127 (PDIP, SOIC) TOP VIEW 1 16 Q1 15 2 Q2 14 3 13 4 Q5 SUBSTRATE 5 12 11 6 Q3 Q4 7 10 8 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 5-1 File Number 662.3 CA3127 Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25oC PARAMETER TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage IC = 10µA, IE = 0 20 32 - V Collector-to-Emitter Breakdown Voltage IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown-Voltage IC1 = 10µA, IB = 0, IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage (Note 3) IE = 10µA, IC = 0 4 5.7 - V Collector-Cutoff-Current VCE = 10V IB = 0 - - 0.5 µA Collector-Cutoff-Current VCB = 10V, IE = 0 - - 40 nA DC Forward-Current Transfer Ratio VCE = 6V IC = 5mA 35 88 - IC = 1mA 40 90 - IC = 0.1mA 35 85 - IC = 5mA 0.71 0.81 0.91 V IC = 1mA 0.66 0.76 0.86 V IC = 0.1mA Base-to-Emitter Voltage VCE = 6V 0.60 0.70 0.80 V Collector-to-Emitter Saturation Voltage IC = 10mA, IB = 1mA - 0.26 0.50 V Magnitude of Difference in VBE Q1 and Q2 Matched VCE = 6V, IC = 1mA - 0.5 5 mV - 0.2 3 µA Noise Figure f = 100kHz, RS = 500Ω, IC = 1mA - 2.2 - dB Gain-Bandwidth Product VCE = 6V, IC = 5mA - 1.15 - GHz Collector-to-Base Capacitance VCB = 6V, f = 1MHz - pF VCI = 6V, f = 1MHz - See Fig. 5 - Collector-to-Substrate Capacitance - pF Magnitude of Difference in IB DYNAMIC CHARACTERISTICS Emitter-to-Base Capacitance VBE = 4V, f = 1MHz - Voltage Gain VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA - Power Gain Cascode Configuration f = 100MHz, V+ = 12V, IC = 1mA 27 - Common-Emitter Configuration VCE = 6V, IC = 1mA, f = 200 MHz - Noise Figure Input Resistance Output Resistance - pF - dB 30 - dB 3.5 - dB 400 - Ω 28 - 4.6 - kΩ Input Capacitance - 3.7 - pF Output Capacitance - 2 - pF Magnitude of Forward Transadmittance - 24 - mS NOTE: 3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA. 5-2 CA3127 Test Circuits V+ 10kΩ BIAS-CURRENT ADJ 470 pF RL 2 51Ω 6 4 0.01 µF 1µF VO Q2 0.01µF 8 1µF Q3 470pF 3 470pF 0.01 µF 7 VI GEN FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q2 1.5 - 8pF VO C2 (NOTE 5) 12 8.2 kΩ SHIELD Q5 2 VI 1000pF 13 0.47µH 14 620Ω 1000 pF 1000 pF TEST POINT 0.3µH 4 Q2 560Ω 1.8pF C1 (NOTE 5) 750Ω 1% 3 NOTES: 1000 pF OHMITE Z144 6 +12V 25kΩ 8 Q3 1000 pF 7 5 4. This circuit was chosen because it conveniently represents a close approximation in performance to a properly unilateralized single transistor of this type. The use of Q3 in a current-mirror configuration facilitates simplified biasing. The use of the cascode circuit in no way implies that the transistors cannot be used individually. 5. E.F. Johnson number 160-104-1 or equivalent. FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT GENERAL RADIO 1021-P1 100MHz GENERATOR 100MHz TEST SET ATTN BOONTON 91C RF VOLTMETER 12VDC POWER SUPPLY FIGURE 3A. POWER GAIN SET-UP VHF NOISE SOURCE HEWLETT PACKARD HP343A 100MHz TEST SET 100MHz POST AMPLIFIER 12VDC POWER SUPPLY 15VDC POWER SUPPLY NOISE FIGURE METER HEWLETT PACKARD HP342A FIGURE 3B. NOISE FIGURE SET-UP FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS 5-3 CA3127 Typical Performance Curves TA = 25oC VCE = 6V RSOURCE = 1kΩ f = 10Hz 30 f = 100Hz NOISE FIGURE (dB) NOISE FIGURE (dB) 30 TA = 25oC VCE = 6V RSOURCE = 500Ω 20 f = 1kHz 10 f = 10kHz f = 100kHz f = 10Hz f = 100Hz 20 f = 1kHz f = 10kHz 10 f = 100kHz 0 0.01 0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT 1.0 BASE-TO-EMITTER VOLTAGE (V) TA = 25oC VCE = 6V GAIN-BANDWIDTH PRODUCT (GHz) 0.1 1.0 COLLECTOR CURRENT (mA) 1.2 1.1 1.0 0.9 TA = -55oC 0.9 TA = 25oC 0.8 0.7 TA = 125oC 0.6 0.5 0.4 0.8 0 1 2 3 4 5 6 7 8 9 10 0.1 1 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR CURRENT CAPACITANCE (pF) TA = 25oC f = 1MHz TRANSISTOR 2.25 CAPACITANCE (pF) 2.00 1.75 BIAS (V) CCI 1.50 1.25 1.00 0.75 CEB 0.50 CCB 0.25 0 1 2 10 3 4 5 6 7 8 9 CCE CCB CEB CCI PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL - 6V - 6V - 4V - 6V Q1 0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 Q2 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 Q3 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 Q4 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 Q5 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35 10 BIAS VOLTAGE (V) FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q2 FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz. THREE TERMINAL MEASUREMENT. GUARD ALL TERMINALS EXCEPT THOSE UNDER TEST. 5-4 CA3127 Typical Performance Curves 40 TA = 25oC, VCE = 6V, RL = 100Ω FOR TEST CIRCUIT SEE FIGURE 19 35 IC = 1mA 30 25 VOLTAGE GAIN (dB) 30 VOLTAGE GAIN (dB) IC = 5mA 35 IC = 5mA 20 15 IC = 1mA 10 IC = 0.5mA 5 20 IC = 0.2mA 15 10 5 IC = 0.2mA 0 IC = 0.5mA 25 0 -5 TA = 25oC, VCE = 6V, RL = 1kΩ FOR TEST CIRCUIT SEE FIGURE 19 -5 -10 -10 1 10 100 FREQUENCY (MHz) 1000 1 100 TA = 25oC, VCE = 6V, IC = 1mA TA = 25oC 8 VCE = 6V 80 70 60 50 40 0.1 1.0 COLLECTOR CURRENT (mA) OUTPUT CONDUCTANCE (g22) (mS) SUSCEPTANCE (b11) (mS) INPUT CONDUCTANCE (g11) OR 7 6 b11 4 3 2 1 0 2 3 4 5 6 7 8 COLLECTOR CURRENT (mA) 3 2 1000 FIGURE 12. INPUT ADMITTANCE (Y11) vs FREQUENCY g11 1 g11 4 FREQUENCY (MHz) 9 0 5 0 100 TA = 25oC VCE = 6V f = 200MHz 5 b11 6 1 10 FIGURE 11. DC FORWARD-CURRENT TRANSFER RATIO (hFE) vs COLLECTOR CURRENT 8 7 SUSCEPTANCE (b11) (mS) 90 1000 FIGURE 10. VOLTAGE GAIN vs FREQUENCY INPUT CONDUCTANCE (g11) OR DC FORWARD CURRENT TRANSFER RATIO FIGURE 9. VOLTAGE GAIN vs FREQUENCY 10 100 FREQUENCY (MHz) 9 1.3 1.2 1.1 TA = 25oC VCE = 6V IC = 1mA 1.0 0.9 0.8 b22 7 0.6 6 0.5 5 0.4 4 0.3 0.2 3 g22 0.1 2 1 0 1000 0 100 10 8 0.7 OUTPUT SUSCEPTANCE (b22) (mS) 40 (Continued) FREQUENCY (MHz) FIGURE 13. INPUT ADMITTANCE (Y11) vs COLLECTOR CURRENT FIGURE 14. OUTPUT ADMITTANCE (Y22) vs FREQUENCY 5-5 CA3127 0.375 2.7 0.350 2.6 g22 0.325 2.5 0.300 2.4 0.275 2.3 0.250 2.2 0.225 2.1 0.200 2.0 0.175 0 1 2 1.9 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) MAGNITUDE OF FORWARD TRANSADMITTANCE (|Y21|) (mS) -20 -30 -40 θ21 -50 -60 |Y21| 30 -70 20 -80 10 -90 0 100 150 -100 1000 200 FREQUENCY (MHz) MAGNITUDE OF REVERSE TRANSADMITTANCE (|Y12|) (mS) -10 VCE = 6V IC = 1mA -20 |Y21| 60 40 -80 20 1 2 -100 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) TA = 25oC VCE = 6V f = 200MHz θ12 0.21 MAGNITUDE OF REVERSE TRANSADMITTANCE (|Y12|) (mS) -90 -110 -120 -130 0 1 2 -150 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) FIGURE 18. REVERSE TRANSADMITTANCE (Y12) vs COLLECTOR CURRENT 0.6 -90 θ12 -95 0.4 -100 0.3 -105 |Y12| -110 -115 0.1 0 100 -80 -100 |Y12| TA = 25oC VCE = 6V IC = 1mA 0.2 -60 θ21 -140 FIGURE 17. FORWARD TRANSADMITTANCE (Y21) vs FREQUENCY 0.5 -40 FIGURE 16. FORWARD TRANSADMITTANCE (Y21) vs COLLECTOR CURRENT PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ21|) (DEGREES) TA = 25oC 80 0 FIGURE 15. OUTPUT ADMITTANCE (Y22) vs COLLECTOR CURRENT 0 PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ21|) (DEGREES) 2.8 VCE = 6V f = 200MHz 100 FREQUENCY (MHz) -120 1000 FIGURE 19. REVERSE TRANSADMITTANCE (Y12) vs FREQUENCY 5-6 PHASE-ANGLE OF REVERSE TRANSADMITTANCE (|θ12|) (DEGREES) b22 PHASE-ANGLE OF REVERSE TRANSADMITTANCE (|θ12|) (DEGREES) 0.400 TA = 25oC MAGNITUDE OF FORWARD TRANSADMITTANCE (|Y21|) (mS) TA = 25oC VCE = 6V f = 200MHz (Continued) OUTPUT SUSCEPTANCE (b22) (mS) OUTPUT CONDUCTANCE (g22) (mS) Typical Performance Curves CA3127 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 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