DISCRETE SEMICONDUCTORS DATA SHEET BYW29E series Rectifier diodes ultrafast, rugged Product specification August 2001 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29E series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 100V/ 150 V/ 200 V k 1 VF ≤ 0.895 V a 2 IF(AV) = 8 A IRRM ≤ 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION PINNING Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29E series is supplied in the conventional leaded SOD59 (TO220AC) package. PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. BYW29E VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - -100 100 -150 150 -200 200 V - 100 150 200 V - 100 150 200 V square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 μs; δ = 0.001 - 80 88 A A - 0.2 A tp = 100 μs - 0.2 A - 150 ˚C - 40 150 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ August 2001 1 MIN. MAX. UNIT - 8 kV Rev 1.400 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. MAX. UNIT - - 2.7 K/W - 60 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Qrr trr1 trr2 Vfr Reverse recovered charge Reverse recovery time Reverse recovery time Forward recovery voltage August 2001 CONDITIONS MIN. IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/μs 2 - TYP. MAX. UNIT 0.8 0.92 1.1 2 0.2 4 20 15 1 0.895 1.05 1.3 10 0.6 11 25 20 - V V V μA mA nC ns ns V Rev 1.400 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29E series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F BYW29 PF / W Tmb(max) / C 108 D = 1.0 Vo = 0.791 V Rs = 0.013 Ohms 115 10 0.5 8 time 122 0.2 6 129 0.1 VF 4 tp I V 143 t T 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 10 150 12 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R 8 PF / W a = 1.57 Rs = 0.013 Ohms 129 2.8 5 Voltage Pulse Source 132.5 4 4 122 125.5 1.9 2.2 6 D.U.T. Tmb(max) / C BYW29 Vo = 0.791 V 7 136 3 139.5 2 143 1 146.5 to ’scope 0 Fig.3. Circuit schematic for trr2 August 2001 136 tp T 2 fr VF Current shunt D= 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 3 Rev 1.400 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.11. Transient thermal impedance; Zth j-mb = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj August 2001 4 Rev 1.400 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29E series MECHANICAL DATA Dimensions in mm Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59 Net Mass: 2 g E A A1 P q D1 D L1 L2(1) Q b1 L 1 2 c b e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 5.08 15.0 13.5 3.30 2.79 L2 (1) 3.0 P q Q 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOD59 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 2-lead TO-220 ISSUE DATE 97-06-11 Fig.12. TO220AC; pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 2001 5 Rev 1.400 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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