DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD (FLAT TYPE) DESCRIPTION products (Electrostatic are a Discharge) diode developed absorption. for Based ESD on 1.4 ± 0.1 the 1.0 ± 0.1 IEC-61000-4-2 test on electromagnetic interference (EMI), 0.6 ± 0.1 the diode assures an endurance, thus making itself most 0.3 ± 0.05 These PACKAGE DRAWING (Unit: mm) suitable for external interface circuit protection. These products are can cope with more high density assembling. 0.5 MAX. 0.13 ± 0.05 Cathode Indication FEATURES • Base on the electrostatic discharge immunity test (IEC 61000-4-2), the product assures the minimum endurance. 0.05 MAX. • Mounted in the ultra super mini mold (flat) package, the product can achiever high density and automatic packaging. APPLICATIONS • External interface circuit ESD absorption. • Circuits for waveform clipper, surge absorber MAXIMUM RATINGS (TA = 25°C) Item Symbol Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg Rating Unit 150 mW 85 (t = 10 µs, 1 pulse) Remark Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15985EJ3V1DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2003 NNCD5.6J to NNCD36J ELECTRICAL CHARACTERISTICS (TA = 25°C) TYPE No. Breakdown Voltage Note1 Capacitance Reverse Leakage IR (µA) Ct (pF) VBR (V) Note2 (kV) MIN. MAX. IT (mA) TYP. Condition MAX. VR (V) MIN. NNCD5.6J 5.3 6.3 5 110 VR = 0 V 5 2.5 30 C = 150 pF NNCD6.8J 6.2 7.1 5 90 f = 1 MHz 2 3.5 30 R = 330 Ω NNCD8.2J 7.7 8.7 5 70 2 5.0 30 Contact NNCD10J 9.0 11.0 5 55 2 7.0 30 discharge NNCD16J 15.0 17.0 5 30 2 12.0 30 NNCD18J 16.2 19.8 5 25 2 13.0 23 NNCD24J 22.0 26.0 5 20 2 19.0 15 NNCD36J 34.0 38.0 2 15 2 27.0 12 Notes 1. Tested with pulse (40 ms) 2. Based upon with IEC 61000-4-2 2 ESD Voltage Data Sheet D15985EJ3V1DS IT (mA) NNCD5.6J to NNCD36J TYPICAL CHARACTERISTICS (TA = 25°C) Figure 1. POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Figure 2. IT - VBR CHARACTERISTICS 100000 NNCD5.6J NNCD8.2J NNCD16J NNCD24J NNCD36J 10000 IT - On-state Current - µA P - Power Dissipation - mW 180 1000 100 10 1 0.1 NNCD6.8J NNCD10J NNCD18J 0.01 0 5 10 15 20 25 30 35 40 45 VBR - Breakdown Voltage - V Data Sheet D15985EJ3V1DS 3 NNCD5.6J to NNCD36J Figure 3. Ct - VR CHARACTERISTICS 90 Ct - Capacitance between Terminal - pF 80 TA = 25 ˚C f = 1 MHz NNCD5.6J 70 NNCD6.8J 60 50 NNCD8.2J 40 NNCD10J 30 20 NNCD16J NNCD18J 10 NNCD24J NNCD36J 0 0.1 1 100 10 VR - Reverse Voltage - V Figure 4. SURGE REVERSE POWER RATINGS TA = 25˚C Non-Repetive PRSM PRSM - Surge Reverse Power - W 1000 tT 100 NNCD[ ]J 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s Zth - Transient Thermal Impedance - (ºC/W) Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 833˚C/W NNCD[ ]J 100 10 1 100 µ 1m 10m 100 m 1 10 100 1000 t - Time - s Remark When using ceramic board of 10 x 7.5 x 0.75 mm (Cu film 11 x 2 x 0.035 mm) 4 Data Sheet D15985EJ3V1DS NNCD5.6J to NNCD36J • The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. 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