MCK100-6 SemiWell Semiconductor Sensitive Gate Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode Repetitive Peak Off-State Voltage : 400V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) ◆ Available with tape & reel ○ 1. Cathode ◆ SOT- 89 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. 1 2 3 Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 400 V VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave : TC = 112 °C 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive 10 A I2t for Fusing t = 8.3ms 0.415 A2 s 2 W 0.1 W I2 t PGM PG(AV) Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current 1 A VRGM Reverse Peak Gate Voltage 5.0 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C TJ TSTG 1/5 Oct, 2003. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. MCK100-6 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Items Ratings Conditions Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ─ ─ ─ ─ 10 200 ㎂ VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.2 1.7 V IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V dv/dt Critical Rate of Rise Off-State Voltage form , RGK = 1000 Ω TJ = 125 °C 500 800 ─ V/㎲ ─ ─ 50 A/㎲ ─ ─ 2 ─ 5.0 10 mA VAK = 6 V, RL=100 Ω VD = 7 V, RL=100 Ω di/dt IH Critical Rate of Rise On-State Current Holding Current VD = Rated VDRM , Exponential wave- IPK = 20A ; PW = 10㎲ ; diG/dt = 1A/㎲ Igt = 20mA VAK = 12 V, Gate Open Initiating Curent = 20mA TC = 25 °C TC = - 40 °C Rth(j-c) Thermal Impedance Junction to case ─ ─ 15 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 125 °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. 2/5 MCK100-6 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ C] 160 1 o 10 VGM(5V) PG(AV)(0.1W) IGM(1A) Gate Voltage [V] PGM(2W) 0 10 o 25 C VGD(0.2V) -1 10 0 1 10 2 10 3 10 140 θ = 180 100 80 π 60 360° θ 20 0 0.0 10 2π θ 40 4 10 o 120 : Conduction Angl e 0.1 0.2 0.3 0.4 0.5 0.6 Average On-State Current [A] Gate Current [mA] Fig 3. Typical Forward Voltage Fig 4. Thermal Response 1 2 10 On-State Current [A] o Transient Thermal Impedance [ C/W] 10 o 125 C 0 10 o 25 C -1 10 Rθ (J-C) 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 -2 10 4.0 -1 0 10 3 10 10 o 0 50 100 o Junction Temperature[ C] 150 o IGT(t C) 1 IGT(25 C) VGT(toC) 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 10 VGT(25oC) 2 10 Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 0.1 -50 1 10 On-State Voltage [V] 1 0.1 -50 0 50 100 150 o Junction Temperature[ C] 3/5 MCK100-6 Fig 7. Typical Holding Current Fig 8. Power Dissipation 10 0.8 o Max. Average Power Dissipation [W] o IH(t C) IH(25 C) θ = 180 1 0.1 -50 0 50 100 o Junction Temperature[ C] 4/5 150 0.7 θ = 120 θ = 90 0.6 θ = 30 o θ = 60 o o o o 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] 0.5 0.6 MCK100-6 SOT- 89 Package Dimension Dim. A B B1 C C1 D D1 E e e1 H L R Min. 1.40 0.36 0.32 0.35 0.35 4.40 1.40 2.30 mm Typ. Max. 1.60 0.56 0.52 0.44 0.44 4.60 1.80 2.60 Inch Typ. Min. 0.055 0.014 0.013 0.014 0.014 0.173 0.055 0.091 1.50 2.90 3.94 0.90 Max. 0.063 0.022 0.020 0.017 0.017 0.181 0.071 0.102 0.060 3.10 4.25 1.10 0.114 0.155 0.035 0.122 0.167 0.043 0.25 0.010 1 2 3 1. Cathode 2. Anode 3. Gate 5/5