Preliminary Technical Information IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 200V = 72A 20m TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 72 A IDM TC = 25C, Pulse Width Limited by TJM 130 A IA TC = 25C 36 A EAS TC = 25C 1.2 J dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns PD TC = 25C 320 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 5.5 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) Weight TO-263 TO-220 TO-3P TO-220AB (IXFP) G DS D (Tab) TO-3P (IXFQ) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 4.5 V 100 nA 5 250 TJ = 125C A A Applications 15.7 20.0 m © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100839C(9/17) IXFA72N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance S 2 Ciss Coss 48 3780 pF 660 pF 1.7 pF 340 1030 pF pF 23 ns 28 ns 78 ns 11 ns 55 nC 19 nC 15 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFP72N20X3 IXFQ72N20X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-3P 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 72 A Repetitive, pulse Width Limited by TJM 288 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 36A, -di/dt = 100A/μs 95 380 8 VR = 100V ns nC A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 200 80 VGS = 10V 9V 70 VGS = 10V 180 160 9V 8V 140 50 40 I D - Amperes I D - Amperes 60 7V 30 120 8V 100 80 7V 60 20 40 6V 10 20 6V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 3.0 80 VGS = 10V 9V 8V RDS(on) - Normalized I D - Amperes 30 VGS = 10V 2.6 60 50 7V 40 30 6V 20 2.2 I D = 72A 1.8 I D = 36A 1.4 1.0 0.6 10 5V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 36A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 20 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA72N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP72N20X3 IXFQ72N20X3 Fig. 8. Input Admittance 80 100 90 70 VDS = 10V 80 60 I D - Amperes I D - Amperes 70 50 40 30 60 50 40 o TJ = 125 C 30 o o 25 C 20 - 40 C 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 TC - Degrees Centigrade Fig. 9. Transconductance 7.0 7.5 8.0 350 90 VDS = 10V o TJ = - 40 C 300 80 70 250 o 60 I S - Amperes 25 C o 125 C 50 40 30 200 150 o TJ = 125 C 100 o TJ = 25 C 20 50 10 0 0 0 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 I D - Amperes 1.0 1.2 1.4 1.6 1.8 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100000 9 f = 1 MHz VDS = 100V I D = 36A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 6.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 100 g f s - Siemens 6.0 VGS - Volts 6 5 4 3 2 10000 Ciss 1000 Coss 100 C rss 10 1 0 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA72N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 7 6 RDS(on) Limit 100 5 I D - Amperes EOSS - MicroJoules IXFP72N20X3 IXFQ72N20X3 4 3 2 10 100μs 1 o TJ = 150 C o 1 1ms TC = 25 C Single Pulse 0 DC 10ms 0.1 0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N20X3 (24-S202) 5-31-17 IXFA72N20X3 TO-263 Outline TO-220 Outline IXFP72N20X3 IXFQ72N20X3 TO-3P Outline 1 = Gate 2 = Drain 3 = Source 4 = Drain Pins: 1 - Gate 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain