DinTek DTE2311 P-channel 20-v (d-s) mosfet halogen-free Datasheet

DTE2311
www.din-tek.jp
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.045 at VGS = - 4.5 V
- 4.2
0.072 at VGS = - 2.5 V
- 3.6
• Halogen-free
RoHS
COMPLIANT
S*
TO-226AA
(TO-92)
S
1
G
2
D
3
D
Top View
P-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 4.0
- 3.9
- 3.2
- 20
- 1.35
- 0.95
1.5
1.05
1.0
0.67
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 4.2
IDM
Pulsed Drain Current (10 µs Pulse Width)
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
65
83
100
120
43
52
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
1
DTE2311
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.6
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
V
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
- 25
VDS = - 5 V, VGS = - 4.5 V
RDS(on)
- 1.5
± 100
µA
- 20
A
VGS = - 4.5 V, ID = - 4.2 A
0.032
0.045
VGS = - 2.5 V, ID = - 3.6 A
0.053
0.072
gfs
VDS = - 5 V, ID = - 4.2 A
14
VSD
IS = - 1.35 A, VGS = 0 V
- 0.77
- 1.1
10
15
Ω
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 6 V, VGS = - 4.5 V, ID = - 4.2 A
1.8
f = 1 MHz
45
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Ω
7.7
td(on)
Turn-On Delay Time
nC
3
IF = - 1.35 A, di/dt = 100 A/µs
70
60
90
70
110
35
55
ns
65
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 4.5 thru 3 V
16
2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
2V
4
12
8
TC = 125 °C
4
25 °C
- 55 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
5
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
3.0
DTE2311
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1500
0.08
1200
C - Capacitance (pF)
0.10
V GS = 2.5 V
RDS(on) -
0.06
0.04
VGS = 4.5 V
Ciss
900
600
Coss
300
0.02
Crss
0
0.00
0
4
8
12
16
20
0
2
ID - Drain Current (A)
4
10
8
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
6
VGS = 4.5 V
ID = 4.8 A
VDS = 6 V
ID = 4.8 A
5
1.4
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
6
4
3
2
1.2
1.0
0.8
1
0.6
- 50
0
3
0
6
9
12
15
- 25
50
75
100
125
150
On-Resistance vs. Junction Temperature
Gate Charge
0.15
R DS(on) - On-Resistance (Ω)
10
I S - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0
0.12
ID = 4.8 A
0.09
0.06
0.03
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3
DTE2311
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
0.2
ID = 250 µA
30
Power (W)
V GS(th) Variance (V)
0.3
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
10-1
TJ - Temperature (°C)
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
ID - Drain Current (A)
10
Limited
by R DS(on) *
1 ms
10 ms
1
100 ms
0.1
1s
10 s
DC
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
100
600
DTE2311
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
5
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Mechanical Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
1
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