SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 18 A, VDD = 50 V, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value Unit 200 18 72 18 V A 280 mJ 13 20 0.18 125 150 -55 to +150 V Ω W °C THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, junction-case RthJA Thermal Resistance, junction-ambient Value 1 62.5 Unit °C/W 1/3 09/11/2012 COMSET SEMICONDUCTORS SEMICONDUCTORS IRF640 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS IGSS RDS(on) Ratings Test Condition(s) Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Min Typ Max Unit ID= 250 µA, VGS= 0 V 200 - - V ID= 250 µA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C 2 3 4 V - - 25 - - 250 VGS= 20 V, VDS= 0 V - - 100 nA ID= 10 A, VGS= 10 V - 0.15 0.18 Ω Min Typ Max Unit 7 11 - - 1200 200 1560 260 - 60 80 - 20 145 145 110 50 300 300 230 ns Min Typ Max Unit µA DYNAMIC CHARACTERISTICS Symbol Ratings gfs Transconductance CISS COSS Input Capacitance Output Capacitance Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time CRSS td(on) tr td(off) tf Test Condition(s) VDS = 2*ID*RDS(on)max ID= 9 A VGS= 0 V, VDS= 25 V f= 1MHz VDD= 100 V, ID= 18 A, RGS= 25 Ω S pF REVERSE DIODE Symbol Ratings Test Condition(s) Inverse Diode Continuous Forward Current. Inverse diode direct current, pulsed. Inverse Diode Forward voltage TC = 25°C - - 18 TC = 25°C - - 72 VGS = 0 V, IF = 18 A - - 2 V Trr Reverse Recovery Time VR = 25 V, IF = 18 A - 130 - ns Qrr Reverse Recovery Charge di/dt = 100 A/µs, TC = 150°C - 0.8 - µC IS ISM VSD A 2/3 09/11/2012 COMSET SEMICONDUCTORS SEMICONDUCTORS IRF640 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Gate Drain Source Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] 3/3 09/11/2012 COMSET SEMICONDUCTORS