DSK BYW35 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
BYW32(Z) - - - BYW36(Z)
VOLTAGE RANGE: 200---600 V
CURRENT: 2.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 15B
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15B,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Dimensions in millimeters
Weight: 0.024ounces,0.68 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYW
32
BYW
33
BYW
34
BYW
35
BYW
36
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
300
400
500
600
V
Maximum RMS voltage
VRMS
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
200
300
400
500
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
2.0
A
IFSM
40.0
A
VF
1.2
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 2.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=150
IR
5.0
50.0
A
Maximum reverse recovery time (Note1)
t rr
200
ns
Typical junction capacitance
(Note2)
CJ
22
pF
Typical thermal resistance
(Note3)
Rθ JA
35
TJ
- 55---- +150
TSTG
- 55---- +150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYW32(Z) - - - BYW36(Z)
2.0
1.5
1.0
Single Phave
Half Wave 60Hz
Resistive of
Inductive Load
0.5
0
25
50
75
100
125
150
175
FIG.2 --PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
FIG.1 --FORWARD DERATING CURVE
50
T J = 25℃
8.3 m s S ingle H alf
S ine-W ave
40
30
20
10
0 1
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
AMPERES
100
10
TJ=25
Pulse Width=300µS
4
2
1.0
0.4
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
10
TJ=125
1
TJ=75
0.1
TJ=25
0.01
0
20
40
60
80
100
FIG.6-- TYPICAL RECTIFICATION EFFICIENCY
1.2
RECTIFICATION EFFICIENCY
40
JUNCTION CAPACITANCE, pF
20
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG.5-- TYPICAL JUNCTION CAPACITANCE
T J =25
f=1.0MHz
20
1
100
10
1
4
10
REVERSE VOLTAGE,VOLTS
100
BYW32 THRU BYW36 SERIES
FAST RECOVERY
1.0
0.8
0.6 STANDARD RECOVERY
0.4
0.2
0
1
10
100
1000
FREOUENCY, KHz
www.diode.kr
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